Philips Components ] L BFQ135 blue binder, tab 6 9397 243 10422 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT 172A2 package. It is primarily intended for use in MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum temperature profile and excellent retiability properties. QUICK REFERENCE DATA Collector-base voltage (open emitter) Coltector-emitter voltage (open base) Collector current (DC) : Total power dissipation up to Tmb = 145 C Junction temperature DC current gain Ic = 120 mA; Vcg = 18 V Transition frequency at f = 1000 MHz Ic = 120 mA; VcE = 18 V: Tamb = 25 OC Maximum power gain at f = 500 MHz I = 120 mA; Voge = 18 V Maximum power gain at f = 800 MHz Ic = 120 mA; VcE = 18 V Output voltage at dip, = 60 dB Io = 120 MA; Vc_e = 18 V; Ry = 75.Q:; fip+qr) = 793.25 MHz Gum Gum max. max. max. max. typ. typ. typ. typ. 25 V 19 V 150 mA 2.7 W 200 C 55 6.5 GHz 17 dB 13.5 dB 12 V MECHANICAL DATA SOT 172A2 (see Fig. 1) PHILIPS January 1990BFQ135 MECHANICAL DATA Dimensions in mm Fig. 1 SOT172A2. 0,13 t 7 5 EE 2), t co 85min | (4x) | pene } 4 a HS 3 i tt 24 0,9t Se ee - 46 -f oe 5,25 5,35 22 0.6 - max max (2x) XI ) i t + \ 90 Le al! ! 7 158 + 6,9min->| z3 he {2x} 18 , a6 10,8 5,2max + 7285902.1 Pinning 1. Base 2/4. Emitter 3. Collector RATINGS Limiting vaiues in accordance with the Absolute Maximum System (IEC 134). Collector-base voltage (open emitter) VcBOo max, 25 V Collector-emitter voitage (open base) VCEO max. 19 V Emitter-base voitage (open collector) VEBO max. 2V Collector current (DC) Ic max. 150 mA Total power dissipation up to Tmp = 145 C Prot max. 2.7 W Storage temperature range Tstg ~65 to +150 C Junction temperature Tj max. 200 C = January 1990 PHILIPSNPN 1 GHz wideband transistor BFQ135 THERMAL RESISTANCE From junction to case CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current le =0; Veg = 18 V DC current gain Io = 120 mA; VcE = 18 V Transition frequency at f = 1000 MHz Iq = 120 mA; VcE = 18 V; Tamb = 25 OC Collector capacitance at f = 1 MHz IE =ig =0;Vcp=18V Emitter capacitance at f = 1 MHz Ic = ig = 0; -VegzO.5V Feedback capacitance at f = 1 MHz Ic =OmA; VcE = 18 V Maximum power gain at f = 500 MHz; Tamp = 25 C I = 120 mA; Vc_E = 18 V; Maximum power gain at f = 800 MHz; Tamb = 25 C I = 120 mA; VcE = 18 V Output voitage at dj, = 60 dB (DIN 45004B) Tamb = 25 C; I = 120 mA; Voce = 18V; RL = 76 Vp = Vo at dim = 60 dB; fp = 445.25 MHz Vq= Vo 6 4B; fg = 453.25 MHz Vr =Vo -6 cB; fr = 455.25 MHz Measured at fin + q r) = 443.25 MHz Output voltage at dip, = 60 dB (DIN 45004B); Tamb = 25 C; I = 120 mA; Vce= 18 V; RE = 752 Vp = Vo at dim = 60 dB; fp = 797.25 MHz Vq = Vo 6 dB; fg = 803.25 MHz Vr =Vo 6 cB; f- = 805.25 MHz Measured at f(p + g r) = 793.25 MHz Rthj-c ICBO Vo Vo max. typ. typ. typ. typ. max. typ. typ. typ. typ. 20 K/W 50 wA 55 6.5 GHz 1.8 pF 5.5 pF 1.0 pF 1.2 17: dB 13.5 dB 1.35 V PHILIPS January 1990BFQ135 output 75 2 wn MCAG48, Fig. 2 Test circuit COMPONENTS: Stripline 1: Lp=21mmL1=8nH Re = 750hm L2 = 15 nH (2 turns/2 mm diameter) Stripline 2: Lp = 16 mm L3= 10 nH (2 turns/1.5 mm diameter) Rc = 75 Ohm January 1990 PH i Li PSNPN 1 GHz wideband transistor BFQ1 35 S-parameters (common emitter) at Veg = 15 V; Tamb = 25 C; typical values Ic f S44 $21 $12 S29 GUM mA MHz dB M M M M 50 40 . 53 47 28.5 153 .02 59 . 81 28 35.2 100 . 50 95 20.6 127 . 038 53 . 61 58 29.6 200 . 48 133 12.7 105 05 50 . 42 84 24.6 500 . 62 169 5.8 80 . 08 56 .3t 108 17.1 800 . 50 170 3.7 67 11 54 .31 125 13.1 1000 . 50 159 3.0 59 13 54 .31 +132 11.2 1200 . 48 152 2.5 50 15 53 33 135 9.6 70 40 . 52 51 30.0 153 . 02 57 .79 -31 35.1 100 52 100 21.9 128 . 037 49 .61 ~63 30.2 200 53 138 13.3 106 . 05 46 42 92 24.7 500 .51 174 5.9 81 . 081 52 .31 120 17.0 800 . 49 168 3.8 67 ~ 115 55 .29 ~131 13.1 1000 . 48 159 3.1 59 . 139 55 .29 138 11.2 4200 .47 151 2.6 50 . 16 53 . 32 142 9.7 100 40 . 48 50 30.2 153 .019 57 .77 -30 34,7 100 . 48 100 21.8 128 . 036 52 . 59 62 29.8 200 48 137 13.1 106 051 51 41 89 24.3 500 . 45 -171 5.7 82 . 091 56 31 115 16.7 800 . 44 166 3.8 68 11 56 29 131 13.1 1000 45 157 3.1 59 . 14 57 29 138 11.2 | 1200 .47 148 2.7 53 . 16 53 31 -144 9.9 120 40 - 48 51 30.9 153 .019 57 77 30 34.9 100 . 49 101 22.5 127 . 036 51 . 59 63 30.0 200 . 50 137 13.4 106 . 051 48 . 42 -93 24.5 500 . 49 172 5.9 82 . 086 54 . 32 122 71 800 .47 169 3.8 69 .12 55 . 30 132 13.2 1000 . 46 159 3.1 61. .15- 55 . 30 138 11.3 1200 46 151 2.6 52 .17 53 . 32 143 9.8 PH | LI PS January 1990