VS-242NQ030PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 1Document Number: 94170
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 240 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-242NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV) 240 A
VR30 V
Package HALF-PAK (D-67)
Circuit configuration Single
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 240 A
VRRM 30 V
IFSM tp = 5 μs sine 27 000 A
VF220 Apk, TJ = 125 °C 0.45 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-242NQ030PbF UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 118 °C, rectangular waveform 240
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
27 000
10 ms sine or 6 ms rect. pulse 3000
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 21 A, L = 1 mH 216 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 48 A
VS-242NQ030PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 2Document Number: 94170
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width = 500 μs
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
240 A TJ = 25 °C 0.54
V
480 A 0.73
240 A TJ = 125 °C 0.47
480 A 0.7
Maximum reverse leakage current
See fig. 2 IRM
TJ = 25 °C VR = Rated VR
20 mA
TJ = 125 °C 1120
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 14 800 pF
Typical series inductance LSFrom top of terminal hole to mounting plane 5.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to 150 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 0.19
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.05
Approximate weight 30 g
1.06 oz.
Mounting torque minimum
Non-lubricated threads
3 (26.5)
N m
(lbf in)
maximum 4 (35.4)
Terminal torque minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
1
10
1000
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.2 0.6 1.0 1.20.80.40
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
100
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0102030
0.01
1
10
100
1000
10 000
5
0.1
2515
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
VS-242NQ030PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 3Document Number: 94170
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
02025
30 35
1000
100 000
10
TJ = 25 °C
10 000
515
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
0 300 350150
100
120
130
140
150
160
100 250
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
110
50 200
0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0150 250 350
50
100
150
200
50 300
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
100 200
VS-242NQ030PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 4Document Number: 94170
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95020
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
1000
100 000
10 100 1000 10 000
At any rated load condition
and with rated V applied
following surge RRM
10 000
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
- Average current rating (x 10)
2
- Product silicon identification
3
- N = Not isolated
4
- Q = Schottky rectifier diode
5
- Voltage rating (030 = 30 V)
6
7- Lead (Pb)-free
Device code
51 32 4 6
24 2 N Q 030 PbF
1
VS-
7
- Vishay Semiconductors product
Document Number: 95020 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-May-09 1
D-67 HALF-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
30 ± 0.05
(1.2 ± 0.002)
5 (0.20)
4 (0.16)
13 (0.51)
24.4 (0.96)
5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3 - 0.1
0.0
(Ø 0.169 )
- 0.004
0.000
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82)
20 (0.78)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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