5200 St. Patrick St., Montreal The Old Railway, Princes Street
Que., H4E 4N9, Canada Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000 Tel: 01 229 581 551
Fax: 514-768-8889 Fax: 01 229 581 554
QF-84
SLD-68HL1
Planar Photodiode
Features
• Low capacitance
• Fast switching time
• Low leakage current
• Linear response vs irradiance
• Hermetic TO-46 package with high dome lens
• Multiple dark current ranges available
Description
This small area planar, passivated silicon
photodetector is designed to operate in either
photovoltaic or reverse bias mode. It provides
excellent linearity in output signal versus irradiance.
This is an ideal detector for fast rise time applications.
Absolute Maximum Ratings
Storage Temperature -40°C to +125°C
Operating Temperature -40°C to +125°C
Soldering Temperature (1) 260°C
Notes: (1) >2 mm from case for <5 sec.
(2) Ee = source @ 2854 °K
(3) Ee = source @ λ = 880 nm
CATHODE
(Common to case)
Anode
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
25.4
Min. 45°
Dimensions in mm. (+/- 0.13)
1.0 5.1
4.7
0.50-0.52 ø 5.3
2.5
Directional Sensitivity Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
10°20°30°40°
50°
60°
70°
80°
90°
100° 1.0 0.8 0.6 0.4 0° 120°
Half Angle = 15°
20° 40° 60° 80° 100°
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol Parameter MIN TYP MAX UNITS TEST CONDITIONS
ISC Short Circuit Current 50 70 µA VR=0V, Ee=5mW/cm2 (2)
VOC Open Circuit Voltage 0.40 V Ee=5mW/cm2 (2)
ID Reverse Dark Current
SLD-68HL1A
100 nA VR=100mV, Ee=0
SLD-68HL1B
100 nA VR=5V, Ee=0
SLD-68HL1C
10 nA VR=5V, Ee=0
SLD-68HL1D
1 nA VR=5V, Ee=0
SLD-68HL1E
250 pA VR=5V, Ee=0
CJ Junction Capacitance 40 pF VR=0, Ee=0, f=1MHz
tR Rise Time 1.0 µs VR=10V, RL=1kΩ (3)
tF Fall Time 1.5 µs VR=10V, RL=1kΩ (3)
TCI Temp. Coef. +0.2 %/°C (2)
VBR Reverse Breakdown Voltage 50 V IR=100µA
λP Maximum Sensitivity Wavelength 930 nm
λR Sensitivity Spectral Range 400 1100 nm
θ1/2 Acceptance Half Angle 15 deg (off center-line)
Specifications subject to change without notice 101987 REV 2
