MJE243 - ON SEMICONDUCTOR - Datasheet.Directory

July, 2014 − Rev. 16 1Publication Order Number:

MJE243/D

MJE243G (NPN),

MJE253G(PNP)

Complementary Silicon

Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

•High Collector−Emitter Sustaining Voltage

•High DC Current Gain

•Low Collector−Emitter Saturation Voltage

•High Current Gain Bandwidth Product

•Annular Construction for Low Leakages

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 100 Vdc

Collector−Base Voltage VCB 100 Vdc

Emitter−Base Voltage VEB 7.0 Vdc

Collector Current − Continuous IC4.0 Adc

Collector Current − Peak ICM 8.0 Adc

Base Current IB1.0 Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25_C

PD15

120 W

mW/_C

Total Power Dissipation

@ TA = 25_C

Derate above 25_C

PD1.5

12 W

mW/_C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +150 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 8.34 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 83.4 _C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

http://onsemi.com

MJE243G TO−225

(Pb−Free) 500 Units/Box

MARKING DIAGRAM

Y = Year

WW = Work Week

JE2x3 = Device Code

x = 4 or 5

G = Pb−Free Package

MJE253G TO−225

(Pb−Free) 500 Units/Box

BASE

EMITTER 1

COLLECTOR 2, 4

BASE

EMITTER 1

COLLECTOR 2, 4

PNP NPN

TO−225

CASE 77−09

STYLE 1

123

YWW

JE2x3G

MJE243G (NPN), MJE253G (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0) VCEO(sus) 100 − V

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCE = 100 Vdc, IE = 0, TC = 125_C)

ICBO −

−0.1

0.1 mA

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0) IEBO − 0.1 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE 40

15 180

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat) −

−0.3

0.6

Base−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) − 1.8 V

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.5 V

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT40 − MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − 50 pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

MJE243G (NPN), MJE253G (PNP)

http://onsemi.com

Figure 1. Power Derating

T, TEMPERATURE (°C)

040 60 100 120 160

PD, POWER DISSIPATION (WATTS)

1.6

1.2

8.0 0.8

4.0 0.4

80 140

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

+11 V

25 ms

-9.0 V

-4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25°C

t, TIME (ns)

500

300

200

100

0.01 0.03 0.05 0.50.20.1 0.3 10

Figure 3. Turn−On Time

5213

NPN MJE243

PNP MJE253

0.02

t, TIME (ms)

0.01

0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL RESISTANCE

qJC(t) = r(t) qJC

qJC = 8.34°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

(NORMALIZED)

Figure 4. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

MJE243G (NPN), MJE253G (PNP)

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

0.01

0.05

Figure 5. Active Region Safe Operating Area

500ms

5.0

20107.05.03.02.01.0

100ms

TJ = 150°C

IC, COLLECTOR CURRENT (AMP)

0.2

0.5

1.0

2.0

0.02

1.0ms

1007050

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

MJE243/MJE253

There are two limitations on the power handling ability o f

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

500

300

200

100

Figure 6. Turn−Off Time

t, TIME (ns)

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 105213

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

VR, REVERSE VOLTAGE (VOLTS)

10 100

100

200

Figure 7. Capacitance

5020107.05.03.01.0

C, CAPACITANCE (pF)

2.0

TJ = 25°C

Cib

Cob

MJE243 (NPN)

MJE253 (PNP)

NPN MJE243

PNP MJE253

7030

MJE243G (NPN), MJE253G (PNP)

http://onsemi.com

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain

Figure 9. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

200

500

0.06 0.1 0.4 4.00.04

100

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

5.0 1.0 2.00.6

25°C

TJ = 150°C

-55°C

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.2

0.8

0.4

TJ = 25°C

V, VOLTAGE (VOLTS)

NPN

MJE243 PNP

MJE253

100

200

2.0

hFE, DC CURRENT GAIN

25°C

TJ = 150°C

-55°C

VCE = 1.0 V

VCE = 2.0 V

V, VOLTAGE (VOLTS)

VCE(sat)

VBE @ VCE = 1.0 V

qVB FOR VBE

TJ = 25°C

VBE(sat) @ IC/IB = 10

IC/IB = 10

VBE @ VCE = 1.0 V

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.5

+2.0

+1.5

+1.0

-0.5

-1.0

-1.5

-2.0

+0.5

-2.5

*APPLIES FOR IC/IB ≤ hFE/3

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.5

+2.0

+1.5

+1.0

-0.5

-1.0

-1.5

-2.0

+0.5

-2.5

*APPLIES FOR IC/IB ≤ hFE/3

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

VCE = 1.0 V

VCE = 2.0 V

7.0

300

0.06 0.1 0.4 4.00.2 1.0 2.00.6

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

0.06 0.1 0.4 4.00.04 0.2 1.0 2.00.6

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

1.0

0.6

0.2

1.4

1.2

0.8

0.4

1.0

0.6

0.2

3.0

5.0

7.0

5.0

IC/IB = 10

VCE(sat)

5.0

VBE(sat) @ IC/IB = 10

*qVC FOR VCE(sat)

qVB FOR VBE

*qVC FOR VCE(sat)

MJE243G (NPN), MJE253G (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE AC

DIM MIN MAX

MILLIMETERS

D10.60 11.10

E7.40 7.80

A2.40 3.00

b0.60 0.90

P2.90 3.30

L1 1.27 2.54

c0.39 0.63

L14.50 16.63

b2 0.51 0.88

Q3.80 4.20

A1 1.00 1.50

e2.04 2.54

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. NUMBER AND SHAPE OF LUGS OPTIONAL.

FRONT VIEW BACK VIEW

FRONT VIEW SIDE VIEW

123321

PIN 4

BACKSIDE TAB

STYLE 1:

PIN 1. EMITTER

2., 4. COLLECTOR

3. BASE

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MJE243/D

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