T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 1 of 7
1N6138AUS – 1N6173AUS
Available on
commercial
versions
Voidless Hermetically Sealed Surface Mount
Bidirectional Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
Qualified Levels:
JAN, JANT X, JANTXV
and JANS
DESCRIPTION
This surface mount series of industry recognized voidless, hermetically sealed, bidirectional
Transient Voltage Suppressor (TVS) designs are military qualified to MIL-PRF-19500/51 6 and are
ideal for high-reli abilit y applications where a failure cannot be tolerated. They provide a working
peak “standoff” volt age s el ecti o n f r om 5. 2 to 152 volts with a 1500 watt rating for a 10 /100 0 us
pulse. They are very robust in hard-glass construction and use internal Category 1 metallurgical
b ond s for hi g h r el iabi l i t y . These are also available as both a non suffix part and an “A” version part
involving different voltage tolerances as further described in the nomenclature section. These
devices are al so avai l ab l e i n a xial -l e aded pack ages f or thru-hole m ount ing.
“C” or SQ-MELF
Package
Also available in:
“C” Package
(axial-leaded)
1N6138 – 1N6173
Important: For the latest infor m ation, visit our website http://www.microsemi.com.
FEATURES
• High surge current and peak pulse power provides transient voltage protection for sensitive circuits
• Triple-layer passivation
• Internal “Category 1” metallurgical bonds
• Voidless hermetically sealed glass package
• JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only)
APPL ICAT IONS / BENEFITS
• Military and other high-reliability appli cations
• Extremely robust construction
• Extensive range in working peak “standoff” voltage (VWM) from 5.2 to 152 volts
• 1500 watt peak pulse power (PPP) for a 10/1000 us pulse
• ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively
• Protection from the secondary effects of lightning per select levels in IEC61000-4-5
• Square-end-cap terminals for easy placement
• Non-sensitive to ESD per MIL-STD-750 method 1020
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”
MAXIMUM RAT IN GS @ TA = 25 oC unless other wise not ed.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-55 to +175
oC
Thermal Resistance Junction-to-End Cap
RӨJEC
5.0
oC/W
Peak Pulse Power @ 25 ºC (10/1000
µ
s)
PPP
1500
W
Off-State Power up to TEC = 150 oC (1)
PD
5.0
W
Off-State Power @ TA = 25 oC (2)
PD
3.0
W
Impulse Repetition Rate
df
0.01
%
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. Linearly derate above TEC =150 oC to zero at TEC =175 oC.
2. Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently contr olled wher e TOP or TJ(MAX) is not exceeded (also see
figure 6).
T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 2 of 7
1N6138AUS – 1N6173AUS
M ECHANI CAL and PACKAGING
• CASE: Hermetically sealed voi dless hard glass with tung sten slug s
• TERMINALS: Tin/lead plate over copper. R oHS compli ant matte-tin is available on commercial grade only.
• MARKING: None
• POLARITY: No polarity marking for these bidirectional TVSs
• TAPE & REEL option: Standard per EIA-481-B. Consult fac tory for quantities.
• WEIGHT: Approximately 1100 milligrams
• See package dimensions on last page.
PART NOMENCLATURE
JAN 1N6138 A US e3
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Voltage Tolerance
A = Standard
Blank =5% higher VC, 5% lower
min. V(BR) and 5% lower IPP
SYMBOLS & DEFI NITIONS
Symbol
Definition
αV(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divi ded by the change in
temperature that cau sed it expressed in %/°C or mV/°C.
V
(BR)
Breakdown Voltage: The voltage across the devic e at a specified current I(BR) in the breakdown region.
VWM Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positi ve cathode-to-anode voltage that
may be continuousl y applied over the standard operating temperature.
ID
Standby Current: The current through the device at rated stand-o ff voltage.
VC Cl amping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
PPP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetiti ve peak impulse power. The
impulse power is the maximum-rated value of the product of IPP and VC.
T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 3 of 7
1N6138AUS – 1N6173AUS
ELECTRICAL CHARACTE RISTICS
INDUSTRY
TYPE NUMBER
(Note 1)
MINIMUM
BREAKDOWN
VOLTAGE
(Note 1)
V(BR) @ I(BR)
RATED
STANDOFF
VOLTAGE
VWM
MAXIMUM
STANDBY
CURRENT
ID @ VWM
MAXIMUM
CLAMPING
VOLTAGE
(Note 1)
VC @ IPP
MAXIMUM
PEAK PULSE
CURRENT
(Note 1)
IPP
MAXIMUM
TEMP.
COEF. OF
V(BR)
αV(BR)
Volts
mA
V
µA
Volts
Amps
%/oC
1N6138AUS
6.46
175
5.2
500
10.5
142.8
0.05
1N6139AUS
7.13
175
5.7
300
11.2
133.9
0.06
1N6140AUS
7.79
150
6.2
100
12.1
124.0
0.06
1N6141AUS
8.65
150
6.9
100
13.4
111.9
0.06
1N6142AUS
9.50
125
7.6
100
14.5
103.4
0.07
1N6143AUS
10.45
125
8.4
20
15.6
96.2
0.07
1N6144AUS
11.40
100
9.1
20
16.9
88.8
0.07
1N6145AUS
12.35
100
9.9
20
18.2
82.4
0.08
1N6146AUS
14.25
75
11.4
20
21.0
71.4
0.08
1N6147AUS
15.20
75
12.2
20
22.3
67.3
0.08
1N6148AUS
17.10
65
13.7
10
25.1
59.8
0.085
1N6149AUS
19.0
65
15.2
5
27.7
54.2
0.085
1N6150AUS
20.9
50
16.7
5
30.5
49.2
0.085
1N6151AUS
22.8
50
18.2
5
33.3
45.0
0.09
1N6152AUS
25.7
50
20.6
5
37.4
40.1
0.09
1N6153AUS
28.5
40
22.8
5
41.6
36.0
0.09
1N6154AUS
31.4
40
25.1
5
45.7
32.8
0.095
1N6155AUS
34.2
30
27.4
5
49.9
30.1
0.095
1N6156AUS
37.1
30
29.7
5
53.6
28.0
0.095
1N6157AUS
40.9
30
32.7
5
59.1
25.4
0.095
1N6158AUS
44.7
25
35.8
5
64.6
23.2
0.095
1N6159AUS
48.5
25
38.8
5
70.1
21.4
0.095
1N6160AUS
53.2
20
42.6
5
77.0
19.5
0.095
1N6161AUS
58.9
20
47.1
5
85.3
17.6
0.100
1N6162AUS
64.6
20
51.7
5
97.1
15.4
0.100
1N6163AUS
71.3
20
56.0
5
103.1
14.5
0.100
1N6164AUS
77.9
15
62.2
5
112.8
13.3
0.100
1N6165AUS
86.5
15
69.2
5
125.1
12.0
0.100
1N6166AUS
95.0
12
76.0
5
137.6
10.9
0.100
1N6167AUS
104.5
12
86.6
5
151.3
9.9
0.100
1N6168AUS
114.0
10
91.2
5
165.1
9.1
0.100
1N6169AUS
123.5
10
98.8
5
178.8
8.4
0.105
1N6170AUS
142.5
8
114.0
5
206.3
7.3
0.105
1N6171AUS
152.0
8
121.6
5
218.4
6.9
0.105
1N6172AUS
171.0
5
136.8
5
245.7
6.1
0.110
1N6173AUS
190.0
5
152.0
5
273.0
5.5
0.110
Notes: 1. Part number without the A suffix has 5% higher VC, 5% lower minimum V(BR) , and 5% lower IPP.
T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 4 of 7
1N6138AUS – 1N6173AUS
GRAPHS
P ulse Time (tp)
FIGURE 1
P eak P ulse Power vs. Pul se Time
Jun cti on Temp er ature (TJ) in °C
FIGURE 2
P eak P ulse Power vs TJ (prior to impu lse)
Peak Pulse Power (PPP)
Max Peak Pulse Power (P
PP
) or cu rrent (I
PP
)
in percent of Max Ratings
T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 5 of 7
1N6138AUS – 1N6173AUS
GRAPHS
Time (t) in milliseconds
FIGURE 3
Pulse Wave Form
TA (°C) (Ambient)
FIGURE 4
Temperature-Power Der ating Curve
Pulse Current (I
PP)
in Percent of I
PP
DC Operation (W) Maximum Rating
T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 6 of 7
1N6138AUS – 1N6173AUS
GRAPHS
A m bient Temperatu r e ( TA) i n °C
FIGURE 5
Steady-State D er ating Cur ve f or Free-Air Mounting (RθJA = 50 ºC/W)
Maximum Steady-State Power in Watts
T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 7 of 7
1N6138AUS – 1N6173AUS
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Minimum clearance of glass body to mounting surface on all orientations.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
NOTE: If mounting requires adhesive s eparate from the solder, an additional 0.090 inch
(2.29 mm) diameter contact may be placed i n the center between the pads as an
optional spot for cement.
Ltr
Dimensions
Notes
Inch
Millimeters
Min
Max
Min
Max
BD
0.183
0.202
4.65
5.13
BL
0.205
0.245
5.21
6.22
ECT
0.019
0.028
0.48
0.71
S
0.003
-
0.08
-
4
DIM
INCH
MILLIMETERS
A1
0.310
7.87
A2
0.170
4.32
B
0.070
1.78
C
0.205
5.21
