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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE180/181/182
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : MJE180
: MJE181
: MJE182
60
80
100
V
V
V
VCEO Collector-Emitter Volt age : MJE180
: MJE181
: MJE182
40
60
80
V
V
V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 3 A
ICP Collector Current (Pulse) 6 A
IB Base Current 1 A
PC Collector Dissipation (Ta=25°C) 1.5 W
PC Collector Dissipation (TC=25°C) 12.5 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co ndi tion Min. Max. Units
BVCEO Collector -Emitter Breakdown Voltage
: MJE180
: MJE181
: MJE182
IC = 10mA, IB = 0
40
60
80
V
V
V
ICBO Collector Cut- off Current : MJE180
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
VCB = 60V, IB = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCB = 60V, IE = 0 @ TC = 150°C
VCB = 80V, IE = 0 @ TC = 150°C
VCB = 100V, IE = 0 @ TC = 150°C
0.1
0.1
0.1
0.1
0.1
0.1
µA
µA
µA
mA
mA
mA
IEBO Em itter Cut-off Current VBE = 7V, IC = 0 0.1 µA
hFE DC Current Gain VCE = 1V, IC = 100mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 1.5A
50
30
12
250
VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
0.3
0.9
1.7
V
V
V
VBE(sat) Base-Emitter Satura tion Voltage IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA 1.5
2.0 V
V
VBE(on) Base-Emitter ON Volt age VCE = 1V, IC = 500mA 1.2 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 100mA 50 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 30 pF
MJE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE180/181/182
Rev. A1, February 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitanc e
Figure 5. Safe Operating Area Figure 6. Power Derating
012345678910
0
1
2
3
4
5
IB=200mA
IB = 120m A
IB = 140mA
IB = 160m A
IB = 180mA
IB = 100m A
IB = 60mA
IB = 80mA
IB = 40mA
IB = 20mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
10 100 1000 10000
1
10
100
1000
VCE=1V
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1
0.01
0.1
1
10
IC = 10IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
f=0.1MHZ
IE=0
Cob[pF], CAPACITANC E
VCB[V], COLLECTOR-BASE VO LTAGE
1 10 100
0.01
0.1
1
10
VCE MAX.
MJE182
MJE181
MJE180
Dissipation Limited
ICMAX.(Pulse)
IC MAX.(DC)
100µs
5ms
500µs
S/B Limited
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE180/181/182
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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