MOTOROLA SC {XSTRS/R FF - 4b pe Wuauzasu onawis? & i ee 6367254 MOTOROLA SC (XSTRS/R F) 96D 81957. D | MAXIMUM RATINGS ~~ : ~~ - - Rating Symbol Value Unit T "2. 7 -O 9 Collector-Emitter Voltage eat VcEO 45 Vde ! Collector-Base Voltage ~~ VcBo 45 Vde BCX70G , H J K Emitter-Base Voltage VEBO 5.0 Vde _- i 200 Collector Current Continuous Ic _ 0 mAdc CASE 318-02/03, STYLE 6 THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) Characteristic Symbol Max Unit Tota! Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C 3 Collector Derate above 25C 1.8 mwrce Thermal Resistance Junction to Ambient Rasa 556 cimW \ Se 1 Total Device Dissipation Pp 300 mw i eo Base : Alumina Substrate,** Ta = 25C 2 . Derate above 25C 2.4 mwerc 2 Emitter Thermal Resistance Junction to Ambient Resa 417 CimW Junction and Storage Temperature Ty, Tstg 150 c f *FR-5 = 1.0 x 0.78 x 0.62 in. . i **Alumina = 0.4 x 0.3 x 0.024 in. 99.6% alumina, GENERAL PURPOSE TRANSISTOR DEVICE MARKING NPN SILICON [ BCX70G = AG; BCX70H = AH; BCX70J = AJ; BCX70K = AK | Refer to MPS3904 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) i Characteristic | Symbot | Min Max | Unit OFF CHARACTERISTICS Coltector-Emitter Breakdown Voltage V(BRJCEO 45 _ Vde i (Ic = 2.0 mAdse, Ie = 0) Emitter-Base Breakdown Voltage ViBR)EBO 5.0 _ Vde : ig = 1.0 pAdo, Ig = 0) I Collector Cutoff Current Ices z (Vce = 32 Vde) . - 20 nAdc (VE = 32 Vde, Ta = 150C) - 20 wAdc Emitter Cutoff Current leBo - 20 nAdc (Veg = 4.0 Vde, Ic = 0) ON CHARACTERISTICS i L DC Current Gain hfe ~ {Ic = 10 zAdc, Voce = 5.0 Vdc} BCX70G _ _ BCX70H 20 _ BCX70J 40 - BCX70K 100 _ i t (Ig = 2.0 mAds, Voge = 5.0 Vde) BCX70G 120 220 : BCX70H 180 310 BCX70J 250 460 BCX70K 380 630 {Ip = 80 mAde, Veg = 1.0 Vdc) BCX70G 60 - BCX70H 70 _ ' BCX70J 90 _ BCX70K 100 _ Collector-Emitter Saturation Voltage VCE(sat) Vde {Ic = 50 mAdg, Ig = 1.25 mAde} _ 0.55 (lg = 10 mAdc, Ip = 0.25 mAdc) _ 0.35 Base-Emitter Saturation Voltage VBE(sat)} Vde (lc = 50 mAde, Ip = 1.25 mAdc) 07 1.05 (ig = 60 mAdg, Ig = 0.25 mAdc) 0.6 0.85 Base-Emitter On Voltage VBE(on) 0.55 0.75 Vde (Ic = 2.0 mAdc, Veg = 5.0 Vdc} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-22MOTOROLA SC {XSTRS/R Ft Ab ve Wauz254 0081954 6 I. cp ee eet ws cee ee nee to" 63672 Ry ake ee. 24 MOTOROLA sc (XSTRS/R FF) _.. . 86B 81958 DB | BCX70G,H,J,K . - T 27-07 2 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) - ! Characteristic I Syuibel | Min {= Max | Unit | i SMALL-SIGNAL CHARACTERISTICS ' Current-Gain Bandwidth Product ft 125 MHz | (l = 10 mAde, Voce = 5.0 Vde, f = 100 MHz) | Output Capacitance Cobo - 45 pF i (Vcg = 10 Vde, Ic = 0, f = 1.0 MHz) Smaill-Signal Current Gain hfe _ (le = 2.0 mAde, Vce = 5.0 Vde, f = 1.0 kHa) BCX70G 125 250 BCX70H . 175 350 BCX70J 250 500 BCX70K 350 700 Noise Figure NF _ 6.0 dB {ig = 0.2 mAde, VcE = 5.0 Vde, Rg = 2.0 ko, f = 1.0 kHz, BW = 200 Hz} SWITCHING CHARACTERISTICS Turn-On Time ton _ 150 ns (ic = 10 mAde, Ip1 = 1.0 mAdc} Turn-Off Time toff _ 800 ns (igo = 1.0 mAdc, Vgg = 3.6 Vde, R1 = R2 = 5.0 ko, RL = 990.9) | i I I | terivrente MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-23MOTOROLA SC {XSTRS/R FF 4b ell b3b7254 00819549 4 T MAXIMUM RATINGS 6367254 MOTOROLA SC CXSTRS RF) __ LN ree emneg T Onma B Rating Symbot Vatue Unit | Collector-Emitter Voltage VcEO 45 v Collector-Base Voltage VcBo 45 v BCX7 1 GJ, K Emitter-Base Voltage VEBO 5.0 v Collector Current Continuous Ic 100 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB THERMAL CHARACTERISTICS ( ) Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw j Ta = 25C 3 Collector Derate above 26C 1.8 mWwC Thermal Resistance Junction to Ambient Raja 556 sCimW 1 Total Device Dissipation Pp 300 mw Base Alumina Substrate,** Ta = 25C . Derate above 25C 2.4 mW5C 2 Emitter Thermal Resistance Junction to Ambient Raa 417 CimW i Junction and Storage Temperature Tye Tstg 1650 C : *FR-S = 1.0 x 0.75 x 0.62 in. GENERAL PURPOSE TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina, DEVICE MARKING PNP SILICON | BCX71G = BG; BCX71J = BJ; BCX71K = BK Refer to 2N5086 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VIBRICEO 45 _ Vde (lc = 2.0 mAdc, Ig = 0) Emitter-Base Breakdown Voltage V(BRJEBO 5.0 _ Vde {Ie = 1.0 pAdc, I = 0) Collector Cutoff Current Ices (Voce = 32 Vdc) _ 20 nAdc {ce = 32 Vdc, TA = 150C) _ 20 BAdC ON CHARACTERISTICS DC Current Gain hee _ (I = 10 pAde, Veg = 5.0 Vde) BCX71G - - BCX7 15 40 _ BCX71K 100 _ (Io = 2.0 mAde, VoE = 5.0 Vde} BCX71G 120 220 BCX71J 260 460 BCX71K 380 630 (ic = 50 mAde, Voce = 1.0 Vde) BCX71G 60 _ . BCX71J 100 _ BCX71K 110 _ (ig = 2.0 mAde, Veg = 5.0 Vde, f = 1.0 kHz) BCX71G 125 250 BCX71d 250 500 BCX71K 350 700 Collector-Emitter Saturation Voltage VcE(sat) Vde (Ic = 10 mAdc, Ig = 0.25 mAdc) _ 0.25 (Ic = 50 mAde, Ig = 1.25 mAdc) - 0.55 Base-Emitter Saturation Voltage VBE(sat) Vde : (Ic = 10 mAdg, Ip = 0.25 mAdc) 0.6 0.85 i {lo = 50 mAde, Ig = 1.25 mAdc) 0.68 1.05 Base-Emitter On Voltage VBE(on) 0.6 0.75 Vde {l = 2.0 mAdc, Voge = 5.0 Vde) Output Capacitance Cobo - 6.0 pF (VcE = 10 Vde, Ic = 0, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-24MOTOROLA SC {XSTRS/R FI Tb vel b3b7254 0081960 4 t we vow nae nd > = < Soe [ 6367254 MOTOROLA SC CXSTRS/R F).._ . <S6D 81960. D BCX71GU,K -- . -O T*27-09 | ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit Noise Figure NF _ 6.0 dB {l = 0.2 mAde, VcE = 5.0 Vde, Rg = 2.0 k0, f = 1,0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS Turn-On Time . ton - 150 ns (ig = 10 mAdc, 1p = 1.0 mAdc) Turn-Off Time totf ~ 800 ns ra (ip2 = 1.0 mAdc, Vag = 3.6 Vde, R1 = R2=5.0k0, - Bae RE = 990 9} _ MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-25