Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 0 1Publication Order Number:
BC847BM3/D
BC847BM3T5G
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−723 package which is
designed for low power surface mount applications.
•This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 45 V
Collector−Base Voltage VCBO 50 V
Emitter−Base Voltage VEBO 6.0 V
Collector Current − Continuous IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD260
2.0
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1) RJA 480 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD600
4.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2) RJA 205 °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Device Package Shipping†
ORDERING INFORMATION
BC847BM3T5G SOT−723 8000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
SOT−723
CASE 631AA
STYLE 1
3
2
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1F = Device Code
M = Date Code
1F M
MARKING
DIAGRAM
BC847BM3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mA) V(BR)CEO 45 − − V
Collector−Emitter Breakdown Voltage
(IC = 10 A, VEB = 0) V(BR)CES 50 − − V
Collector−Base Breakdown Voltage
(IC = 10 A) V(BR)CBO 50 − − V
Emitter−Base Breakdown Voltage
(IE = 1.0 A) V(BR)EBO 6.0 − − V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO −
−−
−15
5.0 nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE −
200 150
290 −
450
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −
−−
−0.25
0.6 V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −
−0.7
0.9 −
−V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
−660
−700
770 mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
BC847BM3T5G
http://onsemi.com
3
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
−55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC847BM3T5G
http://onsemi.com
4
BC847
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC847BM3T5G
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
1.0
0.039
mm
inches
SCALE 20:1
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L0.15 0.20 0.25
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
MIN NOM MAX
INCHES
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 (0.0032) Y
2X
E
12
3
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
BC847BM3T5G
http://onsemi.com
6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
BC847BM3/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
