SKM500GA123D - Semikron - Datasheet.Directory

Features

•MOS input (voltage controlled)

•N channel, homogeneous Silicon

structure (NPT- Non pu nch-

through IGBT)

•Low loss high density chips

•Low tail current

•High short circuit capability,

self limiting to 6 * Icnom

•Latch-up free

•Fast & soft inverse CAL diodes 8)

•Isolated copper baseplate using

DCB Direct Copper Bonding

Technology without hard mould

•Large clearance (9 mm) and

creepage distances (13 mm)

Typical Applications

•Switched mode power supplies

•Three phase inverters for

AC motor speed control

1) Tcase = 25 °C, unless otherwise

specified

2) IF = – IC, VR = 600 V,

–diF/dt = 500 A/µs, VGE = 0 V

3) Use VGEoff = –5... –15 V

8) CAL = Controlled Axial Lifetime

Technology

Case and mech. data → B 6 – 80

Absolute Maximum Ratings Values

Symbol Conditions 1) Units

VCES

VCGR

IC

ICM

VGES

Ptot

Tj, (Tstg)

Visol

humidity

climate

RGE = 20 kΩ

Tcase = 25/65 °C

Tcase = 25/65 °C; tp = 1 ms

per IGBT, Tcase = 25 °C

AC, 1 min.

DIN 40 040

DIN IEC 68 T.1

1200

50 / 40

100 / 80

± 20

220

–40 ... +150 (125)

2500

Class F

40/125/56

V

A

V

W

°C

V

Inverse Diode

IF = –IC

IFM = –ICM

IFSM

I2t

Tcase = 25/80 °C

Tcase = 25/80 °C; tp = 1 ms

tp = 10 ms; sin.; Tj = 150 °C

tp = 10 ms; Tj = 150 °C

45 / 30

100 / 80

350

600

A

A2s

Characteristics

Symbol Conditions 1) min. typ. max. Units

V(BR)CES

VGE(th)

ICES

IGES

VCEsat

gfs

VGE = 0, IC = 0,8 mA

VGE = VCE, IC = 1 mA

VGE = 0 Tj = 25 °C

VCE = VCES Tj = 125 °C

VGE = 20 V, VCE = 0

IC = 25 A VGE = 15 V;

IC = 40 A Tj = 25 (125) °C

VCE = 20 V, IC = 25 A

≥ VCES

4,5

–

12

–

5,5

0,1

3

–

2,1(2,4)

2,6(3,1)

–

6,5

1

–

200

2,45(2,85)

–

V

mA

nA

V

S

CCHC

Cies

Coes

Cres

LCE

per IGBT

VGE = 0

VCE = 25 V

f = 1 MHz

–

1900

250

110

–

300

2100

300

150

60

pF

nH

td(on)

tr

td(off)

tf

Eon 5)

Eoff 5)

VCC = 600 V

VGE = +15 V / –15 V3)

IC = 25 A, ind. load

RGon = RGoff = 40 Ω

Tj = 125 °C

–

60

49

380

37

3,7

2,9

–

ns

mWs

Inverse Diode 8)

VF = VEC

VTO

rt

IRRM

Qrr

IF = 25 A VGE = 0 V;

IF = 40 A Tj = 25 (125) °C

Tj = 125 °C

IF = 25 A; Tj = 125 °C2)

–

2,0(1,8)

2,3(2,1)

1,1

–

22

3,7

2,5

–

1,2

44

–

V

mΩ

A

µC

Thermal Characteristics

Rthjc

Rthch

per IGBT

per diode

per module

–

0,56

1,0

0,05

°C/W

SEMITRANS® M

Low Loss IGBT Modules

SKM 40 GD 124 D

GD

Sixpack

http://store.iiic.cc/

SKM 40 GD 124 D

0898

M040G124.XLS-4

0,1

1

10

100

1000

1 10 100 1000 10000

V

CE

V

I

C

A

t

p

=12µs

100µs

1ms

10ms

M 040G12 4.X LS-6

0

2

4

6

8

10

12

0 200 400 600 800 1000 1200 1400

V

CE

V

I

CSC

/I

C

a l lowe d nu m b er s o f

short circuits: <1000

t ime bet ween s hort

circuits: >1s

d i /d t =30 0 A/µs

900 A/µs

1500 A / µs

M 0 40G12 4.X LS-5

0

0,5

1

1,5

2

2,5

0 200 400 600 800 1000 1200 1400

V

CE

V

I

Cpuls

/I

C

M 040G12 4.X LS-3

0

1

2

3

4

5

6

020406080100

R

G

Ω

E

mWs E

on

E

off

M040G124.XLS-1

0

50

100

150

200

250

0 20406080100120140160

T

C

°C

P

tot

W

M 040G12 4.X LS-2

0

2

4

6

8

10

12

0 102030405060

I

C

A

E

mWs

E

on

E

of f

Fig. 3 Turn-on /-off energy = f (R

G

) Fig. 4 Maximum safe operating area (SOA) I

C

= f (V

CE

)

Fig. 1 Rated power dissipation P

tot

= f (T

C

) Fig. 2 Turn-on /-off energy = f (I

C

)

Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I

C

= f (V

CE

)

T

j

= 1 25 °C

V

CE

= 600 V

V

GE

= + 15 V

R

G

= 40 Ω

1 pulse

T

C

= 25 °C

T

j

≤

150 °C

T

j

≤

150 °C

V

GE

= ± 15 V

t

sc

≤

10 µs

L < 35 nH

I

C

= 25 A

T

j

≤

150 °C

V

GE

= ± 15 V

R

Goff

= 40

Ω

I

C

= 25 A

T

j

= 125 °C

V

CE

= 600 V

V

GE

= + 15 V

I

C

= 25 A

Not for

linear use

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M 040G12 4.X LS-9

0

10

20

30

40

50

012345

V

CE

V

I

C

A17V

15V

13V

11V

9V

7V

M040G124.XLS-10

0

10

20

30

40

50

012345

V

CE

V

I

C

A

17V

15V

13V

11V

9V

7V

M040G124.XLS-12

0

10

20

30

40

50

02468101214

V

G

E

V

I

C

A

M 040G12 4.X LS-8

0

10

20

30

40

50

60

0 20406080100120140160

T

C

°C

I

C

A

P

cond(t)

= V

CEsat(t)

· I

C(t)

V

CEsat(t)

= V

CE(TO)(Tj)

+ r

CE(Tj)

· I

C(t)

V

CE(TO)(Tj)

≤ 1,3 + 0,0005 (T

j

–25) [V]

typ.: r

CE(Tj)

= 0,032 + 0,00010 (T

j

–25) [

Ω

]

max.: r

CE(Tj)

= 0,046 + 0,00014 (T

j

–25) [

Ω

]

valid for V

GE

= + 15 [V]; I

C

≥

0,3 I

Cn

Fig. 9 Typ. output characteristic, t

p

= 80 µs; 25 °C Fig. 10 Typ. output characteristic, t

p

= 80 µs; 125 °C

Fig. 8 Rated current vs. temperature I

C

= f (T

C

)

+2

–1

Fig. 11 Saturation characteristic (IGBT)

Calculation elements and equations Fig. 12 Typ. transfer characteristic, t

p

= 80 µs; V

CE

= 20 V

T

j

= 150 ° C

V

GE

≥

15V

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SKM 40 GD 124 D

0898

M040G124.XLS-18

0

0,2

0,4

0,6

0,8

1

1,2

1,4

1,6

0 1020304050

I

F

A

E

offD

mJ

60 Ω

35 Ω

80 Ω

25 Ω

R

G

=20 Ω

M040G124.XLS-17

0

10

20

30

40

50

0123

V

F

V

I

F

AT

j

= 1 25 ° C, t yp.

T

j

=25°C, typ.

T

j

=125°C, max .

T

j

=25°C, max.

M040G124.XLS-16

10

100

1000

020406080100

R

G

Ω

t

ns t

doff

t

don

t

r

t

f

M040G124.XLS-15

10

100

1000

0204060

I

C

A

t

ns t

doff

t

don

t

r

t

f

M040G124.XLS-14

0,01

0,1

1

10

0102030

V

CE

V

C

nF C

ies

C

oes

C

res

M040G124.XLS-13

0

2

4

6

8

10

12

14

16

18

20

0 50 100 150 200

Q

Gate

nC

V

GE

V

600

V

800V

Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V

CE

V

GE

= 0 V

f = 1 MHz

Fig. 15 Typ. switching times vs. I

C

Fig. 16 Typ. swit ching times vs. gate resistor R

G

Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse

T

j

= 1 25 °C

V

CE

= 600 V

V

GE

= ± 15 V

I

C

= 25 A

induct. load

I

Cpuls

= 25 A

T

j

= 125 °C

V

CE

= 600 V

V

GE

= ± 15 V

R

Gon

= 40

Ω

R

Goff

= 40

Ω

induct. load

V

CC

= 600 V

T

j

= 12 5 °C

V

GE

= ± 15 V

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I:\MARKETIN\FRAMEDAT\datbl\B06-igbt\40gd124.fm

M040G124.XLS-20

0,001

0,01

0,1

1

0,00001 0,0001 0,001 0,01 0,1 1

s

ZthJC

K/W

D=0,5

0,2

0,1

0,05

0,02

0,01

sin

g

le pulse

tp

M040G124.XLS-24

0

1

2

3

4

5

6

0 500 1000 1500

diF/dt A/

µ

s

Qrr

µ

CIF=

25 A

15 A

10 A

5 A

6

0 Ω 35 Ω

8

0 Ω

25 Ω RG=20 Ω

40 A

M040G124.XLS-23

0

10

20

30

40

50

0 500 1000 1500

diF/dt A/

µ

s

IRR

A

60 Ω

35 Ω

80 Ω

25 Ω

RG=20 Ω

M040G124.XLS-22

0

10

20

30

40

50

0 1020304050

I

FA

I

RR

A

60 Ω

35 Ω

80 Ω

25 Ω

RG=

20 Ω

M040G124.XLS-19

0,0001

0,001

0,01

0,1

1

0,00001 0,0001 0,001 0,01 0,1 1

tps

ZthJC

K/W

D=0,50

0,20

0,10

0,05

0,02

0,01

sin

g

le pul se

Fig. 19 Transient thermal impedance of IGBT

ZthJC = f (tp); D = tp / tc = tp · f Fig. 20 Transient thermal impedance of

inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f

Fig. 22 Typ. CAL diode peak reverse recovery

current IRR = f (IF; RG)Fig. 23 Typ. CAL diode peak reverse recovery

current IRR = f (di/dt)

Fig. 24 Typ. CAL diode recovered charge

VCC = 600 V

Tj = 125 °C

VGE = ± 15 V

VCC = 600 V

Tj = 125 °C

VGE = ± 15 V

IF = 25 A

VCC = 600 V

Tj = 125 °C

VGE = ± 15 V

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SKM 40 GD 124 D

0898

SEMI TRANS Sixpack

Case D 67

UL Recognized

File no. E 63 532

SKM 40 GD 12 4 D

Di me nsi on s in mm

Case outline and circuit diagram

Mechanical Da ta

Symbol Conditions Values Units

min. typ. max.

M

1

a

w

to heatsink, SI U nits (M5)

to heatsink, US Units 4

35

–

5

44

5x9,81

175

Nm

lb.in.

m/s

2

g

This is an electrostatic discharge

sensitive device (ESDS).

Please observe the international

standard IEC 747-1, Chapter IX.

Two devices are supplied in one

SE M IB O X A.

Larger packing units (10 and 20

piec es ) ar e u sed if su itabl e

SE MI B O X

→

C

–

1.

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