BUX87 High voltage NPN power transistor Features High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor low power converters 3 2 1 SOT-32 Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage withstand capability. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BUX87 BUX87 SOT-32 Tube April 2009 Doc ID 4508 Rev 5 1/9 www.st.com 9 Electrical ratings 1 BUX87 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCES Collector-emitter voltage (VBE = 0) 1000 V VCEO Collector-emitter voltage (IB = 0) 450 V VEBO Emitter-base voltage (IC = 0) 5 V 0.5 A 1 A Base current 0.3 A Base peak current (tp 5ms) 0.6 A PTOT Total power dissipation at Tc = 25 C 40 W Tstg Storage temperature IC ICM IB IBM TJ Table 3. Symbol Collector current Collector peak current (tp 5ms) -65 to 150 C Max. operating junction temperature 150 Thermal data Parameter Rthj-case Thermal resistance junction-case max. 2/9 Value Doc ID 4508 Rev 5 Value Unit 3.1 C/W BUX87 2 Electrical characteristics Electrical characteristics Tcase = 25 C; unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions ICES Collector cut-off current (VBE = 0) VCE = 1000 V VCE = 1000 V IEBO Emitter cut-off current (IC = 0) VEB = 5 V VCEO(sus)(1) Min. Typ. TC = 125 C Collector-emitter I = 10 mA sustaining voltage (IB = 0) C Max. Unit 100 1 A mA 1 mA 450 V 5 V Emitter-base voltage (IC = 0) IE = 10 mA VCE(sat)(1) Collector-emitter saturation voltage IC = 0.1 A IC = 0.2 A IB = 10 mA IB = 20 mA 0.8 1 V V VBE(sat)(1) Base-emitter saturation voltage IC = 0.2 A IB = 20 mA 1 V DC current gain IC = 50 mA IC = 40 mA VCE = 5 V VCE = 5 V fT Transition frequency IC = 50 mA f = 1MHz VCE = 10 V ts tf Resistive load Storage time Fall time VCC = 250 V IC = 200 mA IB(on) = 40 mA IB(off) = -80 mA tP = 20 s VEBO hFE(1) 50 12 20 MHz 4.5 0.5 s s 1. Pulsed duration = 300 s, duty cycle 1.5% Doc ID 4508 Rev 5 3/9 Electrical characteristics BUX87 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. 4/9 Doc ID 4508 Rev 5 Base-emitter saturation voltage BUX87 Figure 8. Electrical characteristics Reverse biased SOA Doc ID 4508 Rev 5 5/9 Package mechanical data 3 BUX87 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 6/9 Doc ID 4508 Rev 5 BUX87 Package mechanical data SOT-32 (TO-126) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 2.4 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 7.8 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 16 P 2.9 3.2 Q Q1 3.8 1 1.52 H2 2.15 I 1.27 0016114E Doc ID 4508 Rev 5 7/9 Revision history 4 BUX87 Revision history Table 5. 8/9 Document revision history Date Revision Changes 21-Jun-2004 4 Document migration, no content change. 30-Apr-2009 5 Modified: Section 3 on page 6. 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