High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 48 A IC90 TC = 90C 24 A ICM TC = 25C, 1 ms 96 A SSOA (RBSOA) VGE= 15 V, TJ = 125C, RG = 33 Clamped inductive load, VCC= 0.8 VCES ICM = 48 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 , non repetitive 10 s PC TC = 25C 150 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Mounting torque TO-247 AD (IXSH) (TAB) G Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 C G E G = Gate E = Emitter Test Conditions z z z z z Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. BVCES IC = 250 A, VGE = 0 V 600 VGE(th) IC = 1.5 mA, VCE = VGE 3.5 ICES VCE = 0.8 * VCES TJ = 25C VGE = 0 V TJ = 125C 24N60B 24N60BD1 24N60B 24N60BD1 VCE = 0 V, VGE = 20 V VCE(sat) IC = IC90, VGE = 15 V V z 6.5 V z 25 200 1 2 A A mA mA 100 nA (c) 2003 IXYS All rights reserved 2.5 V TAB = Collector International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 50 kHz Applications z AC and DC motor speed control Uninterruptible power supplies (UPS) Welding Advantages z IGES (TAB) Features z Symbol E TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. Weight C z Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density DS98768B(02/03) IXSH 24N60B IXST 24N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 9 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 24N60B 24N60BD1 13 S 1450 pF 130 160 pF pF 37 pF 41 nC 18 nC 18 nC 50 ns Cres QG QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES QGC td(on) tri td(off) Inductive load, TJ = 25C 50 IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 33 ns 150 250 ns 170 300 ns Eoff 1.3 2.6 mJ td(on) 55 ns 75 ns tfi tri Inductive load, TJ = 125C Eon IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 33 1.2 mJ 190 ns tfi 280 ns Eoff 2.4 mJ td(off) RthCK 0.25 Reverse Diode (FRED) VF IRM t rr TO-247 AD Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.83 K/W RthJC Symbol IXSH 24N60BD1 IXST 24N60BD1 Test Conditions K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IF = IC90, VGE = 0 V, TJ = 150C Pulse test, t 300 s, duty cycle d 2 % TJ = 25C IF = IC90, VGE = 0 V, -diF/dt = 100 A/s VR = 100 V IF = 1 A; -di/dt = 100 A/s; VR = 30 V 1.6 2.5 6 TJ = 100C 100 TJ = 25C 25 RthJC V V A ns ns 0.9 K/W Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1