© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C48A
IC90 TC= 90°C24A
ICM TC= 25°C, 1 ms 9 6 A
SSOA VGE= 15 V, TJ = 125°C, RG = 33 Ω ICM = 48 A
(RBSOA) Clamped inductive load, VCC= 0.8 VCES @ 0.8 VCES
tSC VGE = 15 V, VCE = 360 V, TJ = 125°C 10µs
(SCSOA) RG = 33 Ω, non repetitive
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Features
zInternational standard packages
zGuaranteed Short Circuit SOA
capability
zLow VCE(sat)
- for low on-state conduction losses
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zFast Fall Time for switching speeds
up to 50 kHz
Applications
zAC and DC motor speed control
zUninterruptible power supplies (UPS)
zWelding
Advantages
zEasy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
zHigh power density
DS98768B(02/03)
G = Gate
E = Emitter TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
GE
High Speed IGBT
Short Circuit SOA Capability
VCES = 600 V
IC25 = 48A
VCE(sat) = 2.5 V
tfi typ = 170 ns
IXSH 24N60B
IXST 24N60B
IXSH 24N60BD1
IXST 24N60BD1
CE
G
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 600 V
VGE(th) IC= 1.5 mA, VCE = VGE 3.5 6.5 V
ICES VCE = 0.8 • VCES TJ = 25°C 24N60B 25 µA
24N60BD1 200 µA
VGE = 0 V TJ = 125°C 24N60B 1 mA
24N60BD1 2 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2.5 V
(D1)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 9 13 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 1450 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MH z 24N60B 130 p F
24N60BD1 160 pF
Cres 37 pF
QG41 nC
QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES 18 nC
QGC 18 nC
td(on) 50 ns
tri 50 ns
td(off) 150 250 ns
tfi 170 300 ns
Eoff 1.3 2.6 mJ
td(on) 55 ns
tri 75 ns
Eon 1.2 mJ
td(off) 190 ns
tfi 280 ns
Eoff 2.4 mJ
RthJC 0.83 K/W
RthCK 0.25 K/W
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V,
VCE = 0.8 VCES, RG = 33 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 33 Ω
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
TO-268 Outline
IXSH 24N60B IXSH 24N60BD1
IXST 24N60B IXST 24N60BD1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, TJ = 150°C 1.6 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C 2.5 V
IRM IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs6A
trr VR = 100 V TJ = 100°C 100 ns
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C25 ns
RthJC 0.9 K/W
