Parameter Symbol Min Typ Max Unit Conditions
Module responsivity R-15 0.75 0.92 A/W 1550 nm, M = 1
R-13 0.70 0.88 A/W 1310 nm, M = 1
Module breakdown voltage Vbr 40 52 60 V Ir = 10 µA
Temperature coef of Vbr ß 0.12 V/°C ß = dVbr/dTc
Transimpedance Zt 1.7 kΩDC-coupled, RL = 50 Ω
Bandwidth (-3 dB) BW 1.8 2.4 3.2 GHz AC-coupled, RL = 50 Ω,
M = 10
Sensitivity Pr -34 -32.5 dBm 2.5 Gb/s,
PRBS = 2 ^(23)-1
NRZ, BER = 10 ^(-10)
Vr = optimum Vbias
Output amplitude Vout 12 2000 mVpp max. value at -8 dBm,
M = 3
min. value at -34 dBm,
M = 10
Overload power Pol -7 -5 dBm M=3
Optical return loss Prtn 30 dB
Power supply voltage Vcc 5 V
Vr 10 65 V APD bias
Power supply current Icc 69 80 mA
Thermistor resistance Rth 9.5 10 10.5 KΩ
Characteristics
(Tcase = 25°C, Wavelength = 1550 nm, Vcc = 5 V unless otherwise stated)
Parameter Symbol Min Typ Max Unit Conditions
Operating case temp. Top -20 70 °C
Storage temp. Tstg -40 85 °C
Supply voltage Vcc 0 6 V
APD reverse voltage Vr 0 Vbr V Breakdown voltage (Vbr)
varies from device to
device. Vbr value supplied
with each device
APD reverse current Ir 2 mA
Lead soldering temperature - 250 °C
Lead soldering time - 10 s
Absolute Ratings
These limits are absolute stress levels only, functional operation of the device is not guaranteed at these levels.
Long-term exposure to these limits could result in reduced reliability of the device.
(Tcase = 25°C unless otherwise stated)
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