HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer REJ03G0483-0500 (Previous: ADE-208-130D) Rev.5.00 Dec 14, 2004 Features * Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. * MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HZM-N Series Let to Mark Code MPAK Pin Arrangement 3 1 2 (Top View) Rev.5.00, Dec.14.2004, page 1 of 7 1. NC 2. Anode 3. Cathode HZM-N Series Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd * Value 200 Unit mW Tj Tstg 150 -55 to +150 C C 1 1. See Fig. 3. Electrical Characteristics (Ta = 25C) Zener Voltage Test Condition 1 VZ (V)* Type Grade Reverse Current Test IR (A) Condition Dynamic Resistance Test rd () Condition HZM2.0N B Min 1.90 HZM2.2N HZM2.4N B B 2.10 2.30 2.40 2.60 5 5 120 120 0.7 1.0 100 100 5 5 HZM2.7N B B1 2.50 2.50 2.90 2.75 5 120 1.0 110 5 B2 B 2.65 2.80 2.90 3.20 5 50 1.0 120 5 B1 B2 2.80 2.95 3.05 3.20 B B1 3.10 3.10 3.50 3.35 5 20 1.0 130 5 B2 B 3.25 3.40 3.50 3.80 5 10 1.0 130 5 B1 B2 3.40 3.55 3.65 3.80 B B1 3.70 3.70 4.10 3.97 5 10 1.0 130 5 B2 B 3.87 4.01 4.10 4.48 5 10 1.0 130 5 B1 B2 4.01 4.15 4.21 4.34 B3 B 4.28 4.42 4.48 4.90 5 10 1.0 130 5 B1 B2 4.42 4.55 4.61 4.75 B3 B 4.69 4.84 4.90 5.37 5 5 1.5 130 5 B1 B2 4.84 4.98 5.04 5.20 B3 B 5.14 5.31 5.37 5.92 5 5 2.5 80 5 B1 B2 5.31 5.49 5.55 5.73 B3 5.67 5.92 HZM3.0N HZM3.3N HZM3.6N HZM3.9N HZM4.3N HZM4.7N HZM5.1N HZM5.6N Note: 1. Tested with pulse (PW = 40 ms) Rev.5.00, Decl.14.2004, page 2 of 7 Max 2.20 IZ (mA) 5 Max 120 VR (V) 0.5 Max 100 IZ (mA) 5 HZM-N Series Zener Voltage 1 VZ (V)* Type HZM6.2N HZM6.8N HZM7.5N HZM8.2N HZM9.1N HZM10N HZM11N HZM12N HZM13N 5M15N HZM16N HZM18N Note: Grade Min Max B B1 5.86 5.86 6.53 6.12 B2 B3 6.06 6.26 6.33 6.53 B B1 6.47 6.47 7.14 6.73 B2 B3 6.65 6.86 6.93 7.14 B B1 7.06 7.06 7.84 7.36 B2 B3 7.28 7.52 7.60 7.84 B B1 7.76 7.76 8.64 8.10 B2 B3 8.02 8.28 8.36 8.64 B B1 8.56 8.56 9.55 8.93 B2 B3 8.85 9.15 9.23 9.55 B B1 9.45 9.45 10.55 9.87 B2 B3 9.77 10.11 10.21 10.55 B B1 10.44 10.44 11.56 10.88 B2 B3 10.76 11.10 11.22 11.56 B B1 11.42 11.42 12.60 11.90 B2 B3 11.74 12.08 12.24 12.60 B B1 12.47 12.47 13.96 13.03 B2 B3 12.91 13.37 13.49 13.96 B B1 13.84 13.84 15.52 14.46 B2 B3 14.34 14.85 14.98 15.52 B B1 15.37 15.37 17.09 16.01 B2 B3 15.85 16.35 16.51 17.09 B B1 16.94 16.94 19.03 17.70 B2 B3 17.56 18.21 18.35 19.03 1. Tested with pulse (PW = 40 ms) Rev.5.00, Decl.14.2004, page 3 of 7 Reverse Current Test Condition IZ (mA) Dynamic Resistance IR (A) Max Test Condition VR (V) rd () Max Test Condition IZ (mA) 5 2 3.0 50 5 5 2 3.5 30 5 5 2 4.0 30 5 5 2 5.0 30 5 5 2 6.0 30 5 5 2 7.0 30 5 5 2 8.0 30 5 5 2 9.0 35 5 5 2 10.0 35 5 5 2 11.0 40 5 5 2 12.0 40 5 5 2 13.0 45 5 HZM-N Series Zener Voltage 1 VZ (V)* Reverse Current Test Condition IZ (mA) Dynamic Resistance IR (A) Max Test Condition VR (V) rd () Max Test Condition IZ (mA) 5 2 15.0 50 5 5 2 17.0 55 5 5 2 19.0 60 5 Grade Min Max B B1 18.86 18.86 21.08 19.70 B2 B3 19.52 20.21 20.39 21.08 B B1 20.88 20.88 23.17 21.77 B2 B3 21.54 22.23 22.47 23.17 B B1 22.93 22.93 25.57 23.96 B2 B3 23.72 24.54 24.78 25.57 HZM27N HZM30N B B 25.10 28.00 28.90 32.00 2 2 2 2 21.0 23.0 70 80 2 2 HZM33N HZM36N B B 31.00 34.00 35.00 38.00 2 2 2 2 25.0 27.0 80 90 2 2 Type HZM20 HZM22N HZM24N Note: 1. Tested with pulse (PW = 40 ms) Rev.5.00, Decl.14.2004, page 4 of 7 HZM-N Series Mark Code Grade Mark No. HZM2.0N HZM2.2N Type B B 20- 22- HZM2.4N HZM2.7N B B1 24- 271 HZM3.0N B2 B1 272 301 HZM3.3N B2 B1 302 331 HZM3.6N B2 B1 332 361 HZM3.9N B2 B1 362 391 HZM4.3N B2 B1 392 431 B2 B3 432 433 B1 B2 471 472 B3 B1 473 511 B2 B3 512 513 B1 B2 561 562 B3 563 HZM4.7N HZM5.1N HZM5.6N Type Grade Mark No. B1 B2 621 622 B3 B1 623 681 B2 B3 682 683 B1 B2 751 752 B3 B1 753 821 B2 B3 822 823 B1 B2 911 912 B3 B1 913 101 B2 B3 102 103 B1 B2 111 112 B3 B1 113 121 B2 B3 122 123 HZM6.2N HZM6.8N HZM7.5N HZM8.2N HZM9.1N HZM10N HZM11N HZM12N Type Grade Mark No. B1 B2 131 132 B3 B1 133 151 B2 B3 152 153 B1 B2 161 162 B3 B1 163 181 B2 B3 182 183 B1 B2 201 202 B3 B1 203 221 B2 B3 222 223 B1 B2 241 242 HZM27N B3 B 243 27- HZM30N HZM33N B B 30- 33- HZM36N B 36- HZM13N HZM15N HZM16N HZM18N HZM20N HZM22N HZM24N Example of Marking 1. One grade type (grade type B) 20 HZM2.0NB 30 - - Underline HZM30NB 2. Two grade type (B1, B2) 301 302 HZM3.0NB1 HZM3.0NB2 3. Three grade type (B1, B2, B3) 431 432 433 HZM4.3NB1 HZM4.3NB2 HZM4.3NB3 Notes: 1. The grade B type includes from B1 min. to B3 (or B2) max. 2. B grade is standard and has better delivery, These are marked one of B1, B2, B3. Ordering P/N HZM-N series are delivered taped (TL/TR). 3. Choose one taping code and adhere to parts No. Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR). (Grade B type) HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR), HZM24NB3TL (or TR). (Grade B1, B2, B3 type) Rev.5.00, Decl.14.2004, page 5 of 7 HZM-N Series HZM16N HZM13N HZM2.4N HZM3.0N HZM3.6N HZM4.3N HZM5.1N HZM6.2N HZM7.5N HZM8.2N HZM9.1N HZM10N HZM11N Main Characteristic 10 HZM36N HZM33N HZM30N HZM27N HZM24N HZM22N HZM20N HZM18N HZM15N HZM12N 4 HZM6.8N 6 HZM2.0N Zener Current IZ (mA) 8 2 0 0 4 8 12 16 20 24 28 32 36 40 Zener Voltage VZ (V) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07 250 mV/C 0 5 10 15 20 25 30 35 40 45 0.8mm 1.0mm Power Dissipation Pd (mW) %/C 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 Zener Voltage Temperature Coefficient Z (mV/C) Zener Voltage Temperature Coefficient Z (%/C) Fig.1 Zener current vs. Zener voltage 200 Cu Foil Printed circuit board 25 x 62 x 1.6t mm Material: Glass Epoxy Resin+Cu Foil 150 100 50 0 0 50 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (C) Fig.2 Temperature Coefficient vs. Zener voltage Fig.3 Power Dissipation vs. Ambient Temperature Rev.5.00, Decl.14.2004, page 6 of 7 HZM-N Series Package Dimensions As of January, 2003 1.9 0.2 2.8 + 0.2 - 0.6 + 0.2 1.1 - 0.1 0.3 2.8 +- 0.1 0 - 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 - 0.06 (0.65) 1.5 0.15 0.10 3-0.4 +- 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.5.00, Decl.14.2004, page 7 of 7 MPAK -- Conforms 0.011 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0