BAT85 VISHAY Vishay Semiconductors Schottky Diode Features * For general purpose applications. * This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * This diode is also available in the MiniMELF case with type designation BAS85. 94 9367 Mechanical Data Case: DO-35 Glass Case Weight: 130 mg Packaging Codes/Options: TR / 10 k per 13 " reel (52 mm tape), 50 k/box TAP / 10 k per Ammo tape (52 mm tape), 50 k/box Parts Table Part BAT85 Ordering code BAT85-TR or BAT85-TAP Marking Remarks - Tape and Reel / Ammopack Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Part Continuous reverse voltage Symbol Value VR 30 Unit V IF 2001) mA 3001) mA Forward continuous current Tamb = 25 C Peak forward current Tamb = 25 C IFM Surge forward current tp < 1 s, Tamb = 25 C IFSM 600 1) mA Power dissipation Tamb = 65 C Ptot 2001) mW 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range 1) Test condition Symbol Value Unit RthJA 4301) C/W Tj 125 C Tamb - 65 to + 125 C TS - 65 to + 150 C Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Document Number 85669 Rev. 1.3, 31-Mar-04 www.vishay.com 1 BAT85 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Max Unit IR 2 A Pulse test tp < 300 s, < 2 %, IF = 0.1 mA VF 0.24 V Pulse test tp < 300 s, < 2 %, IF = 1 mA VF 0.32 V Pulse test tp < 300 s, < 2 %, IF = 10 mA VF 0.4 V Pulse test tp < 300 s, < 2 %, IF = 30 mA VF Pulse test tp < 300 s, < 2 %, IF = 100 mA VF 0.8 V Diode capacitance VR = 1 V, f = 1 MHz Ctot 10 pF Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA trr 5 ns Reverse breakdown voltage IR = 10 A (pulsed) Leakage current VR = 25 V Forward voltage Part Symbol Min V(BR)R 30 Typ. V 0.5 V Typical Characteristics (Tamb = 25 C unless otherwise specified) 1000 I F - Forward Current ( mA ) Ptot - Power Dissipation ( mW ) 250 200 150 100 50 0 0 18533 50 100 150 200 Tamb - Ambient Temperature ( C ) Fig. 1 Admissible Power Dissipation vs. Ambient Temperature www.vishay.com 2 T j = 125 C 100 25 C 10 - 40 C 1 0.1 0.01 18534 0 0.2 0.4 0.6 0.8 1 VF - Forward Voltage ( V ) 1.2 Fig. 2 Typical Instantaneous Forward Characteristics Document Number 85669 Rev. 1.3, 31-Mar-04 BAT85 VISHAY Vishay Semiconductors 14 C J - Junction Capacitance ( pF ) IR - Reverse Leakage Current ( A ) 1000 T j = 125 C 100 100 C 10 75 C 50 C 1 25 C 0.1 0.01 12 10 8 6 4 2 0 0 5 18535 10 15 20 25 VR - Reverse Voltage ( V ) 30 Fig. 3 Typical Reverse Characteristics 18536 0 5 10 15 20 25 30 VR - Reverse Voltage ( V ) Fig. 4 Typical Junction Capacitance Package Dimensions in mm (Inches) Cathode Identification technical drawings according to DIN specifications 94 9366 0.55 (0.02) max. 2.0 (0.08) max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Document Number 85669 Rev. 1.3, 31-Mar-04 26 (1.02) min. 3.9 (0.15) max. 26 (1.02) min. www.vishay.com 3 BAT85 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85669 Rev. 1.3, 31-Mar-04