VISHAY
BAT85
Document Number 85669
Rev. 1.3, 31-Mar-04
Vishay Semiconductors
www.vishay.com
1
94 9367
Schottky Diode
Features
• For general purpose applications.
• This diode features low turn-on voltage. This
device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges
• This diode is also available in the MiniMELF case
with type designation BAS85.
Mechanical Data
Case: DO-35 Glass Case
Weight: 130 mg
Packaging Codes/Options:
TR / 10 k per 13 " reel (52 mm tape), 50 k/box
TAP / 10 k per Ammo tape (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Part Ordering code Marking Remarks
BAT85 BAT85-TR or BAT85-TAP - Tape and Reel / Ammopack
Parameter Test condition Part Symbol Value Unit
Continuous reverse voltage VR30 V
Forward continuous current Tamb = 25 °C IF2001) mA
Peak forward current Tamb = 25 °C IFM 3001) mA
Surge forward current tp < 1 s, Tamb = 25 °C IFSM 6001) mA
Power dissipation Tamb = 65 °C Ptot 2001) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RthJA 4301) °C/W
Junction temperature Tj125 °C
Ambient operating temperature
range
Tamb - 65 to + 125 °C
Storage temperature range TS- 65 to + 150 °C
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Document Number 85669
Rev. 1.3, 31-Mar-04
VISHAY
BAT85
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 10 µA (pulsed) V(BR)R 30 V
Leakage current VR = 25 V IR2µA
Forward voltage Pulse test tp < 300 µs, δ < 2 %,
IF = 0.1 mA
VF0.24 V
Pulse test tp < 300 µs, δ < 2 %,
IF = 1 mA
VF0.32 V
Pulse test tp < 300 µs, δ < 2 %,
IF = 10 mA
VF0.4 V
Pulse test tp < 300 µs, δ < 2 %,
IF = 30 mA
VF0.5 V
Pulse test tp < 300 µs, δ < 2 %,
IF = 100 mA
VF0.8 V
Diode capacitance VR = 1 V, f = 1 MHz Ctot 10 pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
Irr = 1 mA
trr 5ns
Fig. 1 Admissible Power Dissipation vs. Ambient Temperature
200
18533
T
amb
- Ambient Temperature ( °C)
250
200
150
100
50
50 100 1500
0
P - Power Dissipation ( mW )
tot
Fig. 2 Typical Instantaneous Forward Characteristics
I - Forward Current ( mA )
F
1000
100
10
1
0.1
0.01 1.210.80.60.40.20
V
F
- Forward Voltage ( V )
18534
°C= 125T
j
°C25
°C-40
VISHAY
BAT85
Document Number 85669
Rev. 1.3, 31-Mar-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Fig. 3 Typical Reverse Characteristics
1000
100
10
1
0.1
0.01
18535
I - Reverse Leakage Current ( A )
R
µ
0 5 10 15 20 3025
V
R
- Reverse Voltage(V)
°C= 125T
j
°C100
°C75
°C50
°C25
Fig. 4 Typical Junction Capacitance
V
R
- Reverse Voltage(V)
14
12
10
8
6
4
2
0
C - Junction Capacitance ( pF )
J
0 5 10 15 20 3025
18536
Cathode Identification
∅2.0 (0.08) max.
∅0.55 (0.02) max.
3.9 (0.15) max.26 (1.02) min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35 26 (1.02) min.
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Document Number 85669
Rev. 1.3, 31-Mar-04
VISHAY
BAT85
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
