NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
D60V Zener Diode Built–In Between Collector and Base
DVery Small Fluctuation in Breakdown Voltages
DLarge Energy Handling Capability
DHigh Speed Switching
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO 60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut–Off Current ICBO VCB = 50V, IE = 0 – – 100 µA
Emitter Cut–Off Current IEBO VEB = 7V, IC = 0 – – 2 mA
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0 50 – 70 V
DC Current Gain hFE (1) VCE = 3V, IC = 4A 2000 –5000
hFE (2) VCE = 3V, IC = 8A 500 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 8mA – – 1.5 V
Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 8mA – – 2.0 V
Transition Frequency fTVCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz
Turn–On Time ton VCC = 50V, IB1 = –IB2 = 8mA, – 0.5 – µs
Storage Time tstg IC = 4A – 4.0 – µs
Fall Time tf– 1.0 – µs
Energy Handling Capability Es/b IC = 1A, L = 100mH,
RBE = 100Ω50 – – mJ
.343 (8.72) .148 (3.72)
.059 (1.5) .256 (6.5)
.100 (2.54) .020 (.508)
.043 (1.1)
.032 (0.82)
.043 (1.1)
.406
(10.3)
.413
(10.5)
BCE
B
C
E
