BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. D S D G S G TO - 92 SOT - 23 Absolute Maximum Ratings T a Symbol = 25C unless otherwise noted Parameter BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS 1M) 60 V VGSS Gate-Source Voltage ID Drain Current - Continuous 20 - Pulsed TJ, TSTG TL V 500 500 1200 800 mA Operating and Storage Temperature Range - 55 to 150 C Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 C Thermal Characteristics T a Symbol = 25C unless otherwise noted Parameter BS170 MMBF170 Units PD Maximum Power Dissipation Derate above 25C 830 6.6 300 2.4 mW mW/C RJA Thermal Resistance, Junction to Ambient 150 417 C/W (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 1 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor March 2009 a Symbol Parameter Conditions Type Min. 60 Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 A All IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V All 0.5 A IGSSF Gate - Body Leakage, Forward VGS = 15V, VDS = 0 V All 10 nA VDS = VGS, ID = 1 mA All 2.1 3 V All 1.2 5 BS170 320 V On Characteristics (Notes 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA gFS Forward Transconductance VDS = 10 V, ID = 200 mA 0.8 VDS 2 VDS(on), ID = 200 mA MMBF170 320 VDS = 10 V, VGS = 0 V, f = 1.0 MHz mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance All 24 40 pF All 17 30 pF All 7 10 pF ns Switching Characteristics (Notes 1) ton toff Turn-On Time Turn-Off Time VDD = 25 V, ID = 200 mA, VGS = 10 V, RGEN = 25 BS170 10 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 MMBF170 10 VDD = 25 V, ID = 200 mA, VGS = 10 V, RGEN = 25 BS170 10 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 MMBF170 10 ns Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 2 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics T =25C unless otherwise noted BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 3 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (continued) (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 4 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (continued) (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 5 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 6 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 7 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 8 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 9 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Mechanical Dimensions ( TO - 92 ) TO - 92 Dimensions in Millimeters (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 10 SOT23-3L Packaging Configuration: F igure 1.0 Cus tomized Lab el Packaging Description: S OT 23-3L par ts ar e s hipped i n tape. T he carrier tape is made from a d issipative (carbon filled) polycarbonate resin. T he cover tape i s a m ultilay er film (Heat Activated Adhes ive in nature) primarily c omposed o f polyester film, adhes ive l ayer, seal ant, and anti-static s prayed ag ent. T hes e reeled parts i n s tandard option ar e s hipped with 3, 000 units per 7 " or 177mm diameter reel. T he r eels ar e dark blue in c olor and is made of polystyrene plas tic ( antistatic coated). O ther option c omes in 10,000 units per 13" or 330c m diameter reel. T his and s ome other options ar e des cribed in the P ackaging I nformation table. Antis tatic Cover Tape F63TNR Lab el T hes e f ull reel s are i ndividually labeled and plac ed inside a s tandar d immediate bo x made o f recyclable corrugated brown paper w ith a F airchild logo p rinting. One box contains five reel s maximum. And thes e immediate boxes are plac ed inside a labeled s hipping box which c omes i n different s izes depending on the number of parts s hipped. E mbosse d Carri er Tape 3P 3P 3P 3P SOT23-3L Packaging Information Packaging Option Packaging type S tandar d (no flow code) TN R D87Z SOT23-3L Unit Orientation TN R Qty per Reel/Tube/Bag 3, 000 10, 000 Reel Size 7" Dia 13" 193x 183x80 355x 333x40 Max qty per Box 15, 000 30, 000 Weight per unit (gm) 0. 0082 0. 0082 Weight per Reel (kg) 0. 1175 0. 4006 Box Dimension (mm) B arcode L abel Note/Comments B arcode Lab el 355m m x 333m m x 40m m Intermediate c ontainer f or 13" re el option B arcode L abel s ample B arcode Lab el LO T : CB V K 741B 019 QT Y : 3000 F S ID: MMS Z5221B SPEC : D/C1: D9842AB QT Y 1: SPEC REV: D/C2: QT Y 2: CP N: F AIRCHI LD S E MIC ONDUCT OR C ORP OR AT ION (F 63T NR) 193m m x 183m m x 80m m P izza B ox for S tandard O ption SOT23-3L Tape Leader and Trailer Configuration: F igure 2.0 C arrier Tape C over T ape C omponents Tr ailer Ta pe 300mm minimum or 75 em pty pock ets Leade r T ape 500mm minimum or 125 em pty pockets (c)2001 Fairchild Semiconductor Corporation October 2004, Rev. D1 (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 11 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor SOT-23 Std Tape and Reel Data SOT23-3L Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D0 D1 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT23-3L Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 8mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 October 2004, Rev. D1 (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 12 BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor SOT-23 Std Tape and Reel Data, continued BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor Mechanical Dimensions ( SOT - 23 ) SOT - 23 Dimensions in Millimeters (c) 2009 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 13 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com