BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 1
March 2009
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applic at ion s suc h as small servo motor co nt ro l,
power MOSFET gate drivers, and other switching
applications.
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter BS170 MMBF170 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS ≤ 1MΩ)60V
VGSS Gate-Source Voltage ± 20 V
IDDrain Current - Continuous 500 500 mA
- Pulsed 1200 800
TJ, TSTG Operating and Storage Temperature Range - 55 to 150 °C
TLMaximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds 300 °C
Symbol Parameter BS170 MMBF170 Units
PDMaximum Power Dissipation
Derate ab o ve 25°C830
6.6 300
2.4 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 150 417 °C/W
G
S
D
DGS
TO - 92 SOT - 23
Features
■ High density cell design for low RDS(ON).
■ Voltage controlled small signal switch.
■ Rugged and reliable.
■ High saturation current capability.
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 2
Electrical Characteristics Ta=25°C unless otherwise no ted
Note:
1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
Symbol Parameter Conditions Type Min. Typ. Max. Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 μAAll60 V
IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V All 0.5 μA
IGSSF Gate - Body Leakage, Forward VGS = 15V, VDS = 0 V All 10 nA
On Characteri st ic s (Notes 1)
VGS(th) Gate Thres ho l d Voltage VDS = VGS, ID = 1 mA All 0.8 2.1 3 V
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA All 1.2 5 Ω
gFS Forward Transconductance VDS = 10 V, ID = 200 mA BS170 320 mS
VDS ≥ 2 VDS(on), ID = 200 mA MMBF170 320
Dynamic Char act er i st ic s
Ciss Input Capacitance VDS = 10 V, VGS = 0 V,
f = 1.0 MHz All 24 40 pF
Coss Output Capacitance All 17 30 pF
Crss Reverse Transfer Capacitance All 7 10 pF
Switching Characteri stics (Notes 1)
ton T urn-On Time VDD = 25 V, ID = 200 mA,
VGS = 10 V, RGEN = 25 Ω
BS170 10 ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170 10
toff Tu rn -O ff Time VDD = 25 V, ID = 200 mA,
VGS = 10 V, RGEN = 25 Ω
BS170 10 ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170 10
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 3
Typical Electrical Characteristics
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 4
Typical Electrical Characteristics (continued)
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 5
Typical Electrical Characteristics (continued)
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 6
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 7
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 8
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 9
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 10
Mechanical Dimensions ( TO - 92 )
TO - 92
Dimensions in Millimeters
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 11
SOT23-3L Packaging
Configuration: F igure 1.0
C omponents Leade r T ape
500mm minimum or
125 em pty pock ets
Trailer Ta pe
300mm minimum or
75 em pty pock ets
SOT23-3L Tape Leader and Trailer
Configuration: F igure 2.0
C over T ape
C arrier Tape
Note/Comments
Packaging Option
SOT23-3L Packaging Information
S tandar d
(no flow code) D87Z
Packaging type
Reel Size
TN R
7" D ia
TN R
13"
Qty per Reel/Tube/Bag 3, 000 10, 000
Box Dimension (mm) 193x 183x80 355x 333x40
Max qty per Box 15, 000 30, 000
Weight per unit (gm) 0. 0082 0. 0082
Weight per Reel (kg) 0. 1175 0. 4006
SOT23-3L Unit Orientation
3P 3P 3P 3P
F63TNR Lab el
Cus tomized Lab el
E mbosse d
Carri er Tape
Antistatic Cover Tape
Packaging Description:
S OT 23-3L par ts ar e s hipped i n tape. T he carrier tape is
made from a d is sipative (carbon filled) polycar bonate
resin. T he cover tape i s a m ultilayer film (Hea t Activated
Adhes ive in nature) primarily c ompos ed o f polyes ter film,
adhes ive l ayer, seal ant, and anti-static s prayed ag ent.
T hes e reeled parts i n s tandard op tion ar e s hipped with
3, 000 units per 7" or 177mm diameter reel. T he r eels ar e
dark blue in color and is ma de of polystyrene plas tic ( anti-
static coated). O ther option c omes in 10,000 units per 13"
or 330c m diameter reel. T his and s ome other options ar e
des cribed in the P ackaging Information table.
T hes e f ull reel s are i ndividually labeled and placed inside
a s tandar d immediate box made o f recyclable corrugated
brown paper w ith a F airchild logo p rinting. O ne box
contains f ive r eel s maximum. And thes e immediate boxes
are plac ed ins ide a labeled s hipping box which c omes i n
different sizes depending on the number of parts s hipped.
LO T: CB VK 741B 019
F S ID: MMS Z5221B
D/C1: D9842AB QT Y 1: SPEC REV:
SPEC :
QT Y : 3000
D/C2: Q T Y 2: CP N:
193m m x 183m m x 80m m
P izza B ox for S tandard O ption
B arc ode
Lab el
B arcode L abel
355m m x 333m m x 40m m
Intermediate c ontainer f or 13" re el option
B arcode
Lab el
B arcode L abel s ample
F AIRCHI LD S E MIC ONDUCT O R C ORP OR AT ION (F 63T NR)
SOT-23 Std Tape and Reel Data
©2001 Fairchild Semiconductor Corporation October 2004, Rev. D1
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 12
SOT-23 Std Tape and Reel Data, continued
Dimensions are in millimeter
Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
5.2
+/-0.3
0.06
+/-0.02
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
8mm 7" Dia 7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 - 0.429
7.9 - 10. 9
8mm 13" Dia 13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 - 0.429
7.9 - 10. 9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOT23-3L Embossed Carrier Tape
Configuration: Figure 3.0
SOT23-3L Reel Configuration: Figure 4.0
P1 A0
D1
FW
E1
E2
Tc
Wc
K0
T
B0
D0P0 P2
October 2004, Rev. D1
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E1 13
Mechanical Dimensions ( SOT - 23 )
SOT - 23
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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