LOW NOISE AMPLIFIERS - CHIP
1
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC606 is a GaAs InGaP HBT MMIC Distributed
Amplier die which operates between 2 and 18 GHz.
With an input signal of 12 GHz, the amplier provides
ultra low phase noise performance of -160 dBc/Hz at
10 kHz offset, representing a signicant improvement
over FET-based distributed ampliers. The HMC606
provides 14 dB of small signal gain, +27 dBm output
IP3 and +15 dBm of output power at 1 dB gain com-
pression while requiring 64 mA from a +5V supply.
The HMC606 amplier I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-Chip-
Modules (MCMs). All data is taken with the chip in a 50
Ohm test xture connected via 0.025 mm (1mil) diam-
eter wire bonds of minimal length 0.31 mm (12 mils).
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
P1dB Output Power: +15 dBm
Gain: 14 dB
Output IP3: +27 dBm
Supply Voltage: +5V @ 64 mA
50 Ohm Matched Input/Output
Die Size: 2.80 x 1.73 x 0.1 mm
Typical Applications
The HMC606 is ideal for:
• Radar, EW & ECM
• Microwave Radio
• Test Instrumentation
• Military & Space
• Fiber Optic Systems
Electrical Specications, TA = +25° C, Vcc1= Vcc2= 5V
Parameter Min. Ty p . Max. Min. Ty p . Max. Units
Frequency Range 2 - 12 12 - 18 GHz
Gain 11 14.0 10 13 dB
Gain Flatness ±1.0 ±1.0 dB
Gain Variation Over Temperature 0.021 0.25 dB/ °C
Noise Figure 4.5 6.5 dB
Input Return Loss 20 22 dB
Output Return Loss 15 15 dB
Output Power for 1 dB Compression (P1dB) 12 15 10 13 dBm
Saturated Output Power (Psat) 18 15 dBm
Output Third Order Intercept (IP3) 27 22 dBm
Phase Noise @ 100 Hz -140 -140 dBc/Hz
Phase Noise @ 1 kHz -150 -150 dBc/Hz
Phase Noise @ 10 kHz -160 -160 dBc/Hz
Phase Noise @ 1 MHz -170 -170 dBc/Hz
Supply Current 64 95 64 95 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
2
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-30
-20
-10
0
10
20
0 2 4 6 8 10 12 14 16 18 20 22
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
2 4 6 8 10 12 14 16 18
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
2 4 6 8 10 12 14 16 18
+25C
+85C
-55C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
2 4 6 8 10 12 14 16 18
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
2 4 6 8 10 12 14 16 18
+25C
+85C
-55C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
Power Compression
-5
0
5
10
15
20
-15 -10 -5 0 5 10
Output Power
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
Pin (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
3
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
5
10
15
20
25
30
35
2 4 6 8 10 12 14 16 18
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
5
7
9
11
13
15
17
19
21
23
25
2 4 6 8 10 12 14 16 18
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
2 4 6 8 10 12 14 16 18
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
Additive Phase Noise vs. Offset Frequency,
RF Frequency = 12 GHz, At Small Signal
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
OFFSET FREQUENCY (Hz)
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
10 100 1K 10K 100K 1M
ADDITIVE PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
10 100 1K 10K 100K 1M
ADDITIVE PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
Additive Phase Noise Vs Offset Frequency, RF
Frequency = 12 GHz,
RF Input Power = 9 dBm (Psat)
Additive Phase Noise Vs Offset Frequency, RF
Frequency = 12 GHz,
RF Input Power = 3 dBm (P1dB)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
4
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
100 1K 10K 100K 1M
ADDITIVE PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
Notes:
Additive Phase Noise Vs Offset Frequency,
RF Frequency = 8 GHz,
RF Input Power = 12 dBm (Psat)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
5
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Vdd1= Vdd2= 5V 7V
RF Input Power (RFIN) +15 dB m
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 14.6 mW/°C above 85 °C) 1.32 W
Thermal Resistance
(channel to die bottom) 68.37 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vcc1= Vcc2 (V) Icc1 + Icc2 (mA)
+4.5 53
+5.0 64
+5.5 74
Typical Supply Current vs. Vcc1, Vcc2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
6
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Pad Number Function Description Interface Schematic
1RFIN This Pad is AC coupled
and matched to 50 Ohms.
2, 4 Vcc1, Vcc2 Vcc1= Vcc2= 5V
3RFOUT This Pad is AC coupled
and matched to 50 Ohms.
Pad Descriptions
Assembly Diagram
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
7
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with
vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Mouser Electronics
Authorized Distributor
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Analog Devices Inc.:
HMC606LC5 HMC606LC5TR