SILICON PLANAR PNP LOW NOISE, LOW LEVEL AMPLIFIERS The 2N 3962, 2N 3964 and 2N 3965 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case particularly intended for use in low noise applications. They features are excellent current gain linearity from 1 uA to 50 mA. ABSOLUTE MAXIMUM RATINGS 2N 3962 2N 3964 | 2N 3965 VecBo Collector-base voltage (I_-= 0) -45V | -60 V VeEeo Coliector-emitter voltage (Ip = 0) 45 V -60 V VeBo Emitter-base voltage (I= 0) 6V Cc Collector current -200 mA Prot Total power dissipation at Tamp < 25C 0.36 W at Tease S& 25C 1.2W Tstge Vj Storage and junction temperature -65 to 200 C MECHANICAL DATA 7/76 276 Dimensions in mmTHERMAL DATA Rth j-case Thermal resistance junction-case max 146 C/W Rth amb Thermal resistance junction-ambient max 487 C/W ELECTRICAL CHARACTERISTICS (T.n,= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit lees Collector cutoff for 2N 3964 current (Vee= 0) Vce= -40V ~10) nA Vee=-40V Tamp= 150C -10) WA for 2N 3962 and 2N 3965 Vce= -50V ~10| nA Vee=-50V Tamp= 150C ~10] UA lepo Emitter cutoff Vep> -4V -10) nA current {lo= 0} Vipr)cao Collectorbase lc= ~10 MA breakdown voltage for 2N 3964 ~-45 Vv (le= 0) for 2N 3962 and 2N 3965 -60 Vv Vieryces Collector-emitter Ic=-i0 UA breakdown voltage for 2N 3964 ~45 Vv (Vee= 0) for 2N 3962 and 2N 3965 -60 Vv VeceEo (sus) Collector-emitter Ilp=-5 mA sustaining voltage for 2N 3964 -45 Vv (lg = 0) for 2N 3962 and 2N 3965 -60 Vv ViBR)EBO Emitter-base le= -10 uA -6 Vv breakdown voltage (I= 0) Vee (at) Collector-emitter lg=-10mA_ Ig=-0.5 mA -0.25| V saturation voltage tc=-50mA Ip=-5mA ~0.4| V Vec(sat) Base-emitter Iloe=-10mA_ Ig=-0.5 mA -0.9) V saturation voltage ic=-50mA = Ip=-5mA -0.95} V hee DC current gain for 2N 3962 IG=-1UA Vce=-5V 60 _ le=-10UA Vee=-5V 100 300; Ic=-100KMA Veep=-5V 100 lc=-1mMA Veg =-5V |100 450| lc=-10MA Veoe=-5V 100 _ Ilc=-50mA Vee=-5V 90 - Ic=-10HA Vce=-5V Tamp = -55C 40 -ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.) Unit Nee DC current gain for 2N 3962 Ic=-5OmMA Voe= -5V Tamp= ~85C 45 _ Ic=-1 mA Voe= -bV Tambp= 100C 600} for 3N 3964 and 2N 3965 lo=-1 pA Vce= -5V 180 - le=-10UA Vee= -5V 250 500}; 1c=-100UA Vee=-5V 250 _ Ic=-1mA Vee= -5V 250 600; - le=-10mMA Vee=-5V 200 - Ic=-50mA Vee=-SV 180 _ Ic=-10UA Veoe=-5V Tamp= 85C 100 _ le=-50mMA Voe=-5V Tamb= ~55C 90 _ lg=-1T mA Vege= -5bV Tamp= 100C soc} Ne Small signa! current lc=-1mA Vee -9V current gain f=1kHz for 2N 3962 100 550} for 2N 3964 and 2N 3965 250 700} fr Transition frequency le=-0.5mA Vee= -5V f= 20 MHz for 2N 3962 40 160 | MHz for 2N 3964 and ZN 3965 50 160 |MHz CEBO Emitter-base lc=9O Vepo -0.5V capacitance f= 1 MHz 15| pF Ceso Collector-base le=0 Vop= -5V capacitance f= 1 MHz 6| pF NF Noise figure le=-20UA Vee= -5V Rg= 10 ka for 2N 3962 f= 10 to 10 000 Hz 3} dB f= 100 Hz B= 15 Hz 10} dB f= 1 kHz B= 150 Hz 3| dB f= 10 kHz B= 1.5 kHz 3] dB for 2N 3964 and 2N 3965 f = 10 to 10 000 Hz 2| dB f= 10 Hz B=2 Hz 8] dB = 100 Hz B= 15 Hz 4| dB f= 1 kHz B= 150 Hz 2} dB f= 10 kHz B= 1.5 kHz 2| dB 2782N 3064 | 3968 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.| Unit hie Input impedance Ic=-1 mA Vce= -5V f= 1 kHz for 2N 3962 2.5 17] ka for 2N 3964 and 2N 3965 6 20; ka Hve Reverse voltage ratio Ic=-1mA Vce= -5V f= 1 kHz 100x104) Noe Output admittance Ic=-1mA Vce= -5V f= 1 kHz for 2N 3962 5 40} us for 2N 3964 and 2N 3965 5 50| us * Pulsed: pulse duration = 300 us, duty cycle = 1% 279