1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: * * (TO-3) Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. Pb-free packages. Dimensions A Maximum 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K Style 1: Pin 1. Base 2. Emitter Collector (Case) Minimum L 0.440 (11.18) 0.665 (16.89) BSC - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) V (TO-3) Case 1-07 Style 1 0.480 (12.19) N U 20 and 30 Ampere Power Transistors NPN Silicon 40 and 60 Volts, 150 Watts 1.187 (30.15) BSC 0.131 (3.33) 0.188 (4.77) Dimensions : Inches (Millimetres) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 22/10/08 V1.1 1165892 Maximum Ratings (Note 1) Rating Symbol 2N3772 Collector-Emitter Voltage VCEO 60 Collector-Emitter Voltage VCEX 80 Collector-Base Voltage VCB 100 Emitter-Base Voltage VEB 7.0 Unit V dc Collector Current - Continuous - Peak IC 20 30 Base Current - Continuous - Peak IB 5.0 15 Total Device Dissipation at TC = 25C Derate above 25C PD 150 0.855 W W/C TJ, Tstg -65 to +200 C Symbol Maximum Unit JC 1.17 C/W Operating and Storage Junction Temperature Range A dc Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. Indicates JEDEC registered data. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit Off Characteristics Collector-Emitter Sustaining Voltage (Note 2 and 3) (lC = 0.2 A dc, lB = 0) 2N3772 VEO (sus) 60 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, VEB (off) = 1.5 V dc, RBE = 100) 2N3772 VCEX (sus) 80 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, RBE = 100) 2N3772 VCER (sus) 70 - Collector Cut off Current (Note 2) (VCE = 50V dc, IB = 0 ) (VCE = 25V dc, IB = 0 ) 2N3772 ICEO - 10 Collector Cut off Current (Note 2) (VCE = 100V dc, VEB (off) = 1.5V dc) (VCE = 45V dc, VEB (off) = 1.5V dc, Tc = 150C 2N3772 2N3772 V dc mA dc ICEV - 5.0 10 http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 22/10/08 V1.1 1165892 Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Collector Cut off Current (Note 2) (VCB = 100V dc, IE = 0) Symbol Minimum Maximum 2N3772 ICBO - 5.0 2N3772 IEBO - 5.0 DC Current Gain (Note 3) (lC = 10A dc, VCE = 4.0V dc) (lC = 20A dc, VCE = 4.0V dc) 2N3772 2N3772 hFE 15 5.0 60 - Collector-Emitter Saturation Voltage (lC = 10A dc, IB = 1.0A dc) (lC = 20A dc, IB = 4.0A dc) 2N3772 2N3772 VCE (sat) - 1.4 4.0 Base-Emitter on Voltage (lC = 10A dc, VCE = 4.0V dc) (lC = 8.0A dc, VCE = 4.0V dc) 2N3772 Emitter Cut off Current (Note 2) (VBE = 7.0Vdc, IC = 0 ) Unit mA dc On Characteristics (Note 2) - V dc VBE (on) - 2.2 Current-Gain - Bandwidth Product (lC = 1.0A dc, VCE = 4.0V dc, ftest = 50kHz) fT 0.2 - MHz Small-Signal Current Gain (lC = 1.0A dc, VCE = 4.0V dc, f = 1.0kHz) hfe 40 - - IS/b 2.5 - A dc Dynamic Characteristics (Note 2) Second Breakdown Second Breakdown Energy with Base Forward Biased, t = 1.0s (non-repetitive) 2N3772 (VCE = 60V dc) 2. Indicates JEDEC registered data. 3. Pulse Test: 300s, Rep. Rate 60cps. PD , Power Dissipation (Watts) Power Derating TC, Case Temperature (C) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 22/10/08 V1.1 1165892 r(t), Effective Transient Thermal Resistance (Normalized) Thermal Response t, Time (ms) Active-Region Safe Operating Area IC, Collector Current (Amperes) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than curves indicate. Is based on JEDEC registered data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (pk) < 200C. TJ (pk) may be calculated from the data of using data of and the pulse power limits of Figure 3, TJ (pk) will be found to be less than TJ (max) for pulse widths of 1ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by TJ (maximum). VCE, Collector Emitter Voltage (Volts) s) t, Time ( Turn-On Time RB and RC are varied to obtain desired current levels D1 must be fast recovery type, e.g.: 1N5825 used above IB to 100mA MSD6100 used below IB to 100mA IC, Collector Current (Amperes) Switching Time Test Circuit http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <4> 22/10/08 V1.1 1165892 Capacitance s) t, Time ( C, Capacitance (pF) Turn-Off Time VR, Reverse Voltage (Volts) IC, Collector Current (Amperes) Collector Saturation Region hFE DC Current Gain VCE, Collector-Emitter Voltage (Volts) DC Current Gain IC, Collector Current (Amperes) IC, Collector Current (Amperes) Part Number Table Description Transistor, NPN, TO-3 Part Number 2N3772 Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. 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