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High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching applications.
Features:
•Forward biased second breakdown current capability
IS/b = 2.5 A dc at VCE = 60V dc.
•Pb-free packages.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
20 and 30 Ampere
Power Transistors
NPN Silicon
40 and 60 Volts, 150 Watts
(TO-3)
Case 1-07
Style 1
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above
the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions
may affect device reliability.
1. Indicates JEDEC registered data.
Rating Symbol 2N3772 Unit
Collector-Emitter Voltage VCEO 60
V dc
Collector-Emitter Voltage VCEX 80
Collector-Base Voltage VCB 100
Emitter-Base Voltage VEB 7.0
Collector Current - Continuous
- Peak IC
20
30 Adc
Base Current - Continuous
- Peak IB
5.0
15
Total Device Dissipation at TC= 25°C
Derate above 25°C PD
150
0.855
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Maximum Ratings (Note 1)
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case θJC 1.17 °C/W
Thermal Characteristics
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (Note 2 and 3)
(lC = 0.2 A dc, lB= 0) 2N3772 VEO (sus) 60 -
V dc
Collector-Emitter Sustaining Voltage
(IC= 0.2A dc, VEB (off) = 1.5 V dc, RBE = 100Ω) 2N3772 VCEX (sus) 80 -
Collector-Emitter Sustaining Voltage
(IC= 0.2A dc, RBE = 100Ω) 2N3772 VCER (sus) 70 -
Collector Cut off Current (Note 2)
(VCE = 50V dc, IB= 0 ) 2N3772
(VCE = 25V dc, IB= 0 )
ICEO - 10
mA dc
Collector Cut off Current (Note 2)
(VCE = 100V dc, VEB (off) = 1.5V dc) 2N3772
(VCE = 45V dc, VEB (off) = 1.5V dc, Tc= 150°C 2N3772
ICEV - 5.0
10
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Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Collector Cut off Current (Note 2)
(VCB = 100V dc, IE = 0) 2N3772 ICBO - 5.0
mA dc
Emitter Cut off Current (Note 2)
(VBE = 7.0Vdc, IC= 0 ) 2N3772 IEBO - 5.0
On Characteristics (Note 2)
DC Current Gain (Note 3)
(lC= 10A dc, VCE = 4.0V dc) 2N3772
(lC= 20A dc, VCE = 4.0V dc) 2N3772
hFE 15
5.0
60
-
-
Collector-Emitter Saturation Voltage
(lC= 10A dc, IB= 1.0A dc) 2N3772
(lC= 20A dc, IB= 4.0A dc) 2N3772
VCE (sat) - 1.4
4.0
V dc
Base-Emitter on Voltage
(lC= 10A dc, VCE = 4.0V dc) 2N3772
(lC= 8.0A dc, VCE = 4.0V dc)
VBE (on) - 2.2
Dynamic Characteristics (Note 2)
Current-Gain - Bandwidth Product
(lC= 1.0A dc, VCE = 4.0V dc, ftest = 50kHz) fT0.2 - MHz
Small-Signal Current Gain
(lC = 1.0A dc, VCE = 4.0V dc, f = 1.0kHz) hfe 40 - -
Second Breakdown
Second Breakdown Energy with Base Forward Biased, t = 1.0s (non-repetitive)
(VCE = 60V dc) 2N3772 IS/b 2.5 - Adc
2. Indicates JEDEC registered data.
3. Pulse Test: 300µs, Rep. Rate 60cps.
Power Derating
TC, Case Temperature (°C)
PD, Power Dissipation (Watts)
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Active-Region Safe Operating Area
VCE, Collector Emitter Voltage (Volts)
IC, Collector Current (Amperes)
Thermal Response
t, Time (ms)
r(t), Effective Transient Thermal
Resistance (Normalized)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE limits
of the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipation
than curves indicate.
Is based on JEDEC registered data. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ (pk) < 200°C.
TJ (pk) may be calculated from the data of using data of and the
pulse power limits of Figure 3, TJ (pk) will be found to be less
than TJ (max) for pulse widths of 1ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by TJ (maximum).
Switching Time Test Circuit
RBand RCare varied to obtain desired current levels
D1 must be fast recovery type, e.g.:
1N5825 used above IBto 100mA
MSD6100 used below IBto 100mA
Turn-On Time
IC, Collector Current (Amperes)
t, Time (µµs)
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IC, Collector Current (Amperes)
Turn-Off Time
t, Time (µµs)
Capacitance
VR, Reverse Voltage (Volts)
C, Capacitance (pF)
Collector Saturation Region
IC, Collector Current (Amperes)
VCE, Collector-Emitter Voltage (Volts)
IC, Collector Current (Amperes)
DC Current Gain
hFE DC Current Gain
Part Number Table
Description Part Number
Transistor, NPN, TO-3 2N3772
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