IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25°C, VGS=10V 100 A
TC=100°C, VGS=10V2) 100
Pulsed drain current2) ID,pulse TC=25°C 400
Avalanche energy, single pulse2) EAS ID=50A 280 mJ
Avalanche current, single pulse IAS -100 A
Gate source voltage VGS - ±20 V
Power dissipation Ptot TC=25°C 115 W
Operating and storage temperature Tj, Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 40 V
RDS(on),max (SMD version) 2.4 mΩ
ID100 A
Product Summary
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Type Package Marking
IPB100N04S4-02 PG-TO263-3-2 4N04H2
IPI100N04S4-02 PG-TO262-3-1 4N04H2
IPP100N04S4-02 PG-TO220-3-1 4N04H2
Rev. 1.0 page 1 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 1.3 K/W
Thermal resistance, junction -
ambient, leaded RthJA ---62
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2 cooling area3) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= 1mA 40 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=70µA 2.0 3.0 4.0
Zero gate voltage drain current IDSS VDS=40V, VGS=0V - 0.03 1 µA
VDS=18V, VGS=0V,
Tj=85°C2) -120
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=100A - 2.4 2.7 mΩ
VGS=10V, ID=100A,
SMD version - 2.1 2.4
Values
Rev. 1.0 page 2 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics2)
Input capacitance Ciss - 5520 7180 pF
Output capacitance Coss - 1250 1750
Reverse transfer capacitance Crss -4297
Turn-on delay time td(on) -18-ns
Rise time tr-13-
Turn-off delay time td(off) -19-
Fall time tf-21-
Gate Char
g
e Characteristics2)
Gate to source charge Qgs -3242nC
Gate to drain charge Qgd -1023
Gate charge total Qg-7090
Gate plateau voltage Vplateau - 5.5 - V
Reverse Diode
Diode continous forward current2) IS- - 100 A
Diode pulse current2) IS,pulse - - 400
Diode forward voltage VSD
VGS=0V, IF=100A,
Tj=25°C - 0.9 1.3 V
Reverse recovery time2) trr
VR=20V, IF=50A,
diF/dt=100A/µs -48-ns
Reverse recovery charge2) Qrr -54-nC
TC=25°C
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20V, VGS=10V,
ID=100A, RG=3.5Ω
VDD=32V, ID=100A,
VGS=0 to 10V
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 1.3K/W the chip is able to carry 172A at 25°C.
Rev. 1.0 page 3 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V; SMD
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0; SMD ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
25
50
75
100
125
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
100
120
0 50 100 150 200
TC [°C]
ID [A]
Rev. 1.0 page 4 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C; SMD RDS(on) = f(ID); Tj = 25 °C; SMD
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 100 A; VGS = 10 V; SMD
parameter: Tj
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
5.5 V
6 V
6.5 V
7 V
10 V
0
50
100
150
200
250
300
350
400
01234
VDS [V]
ID [A]
5.5 V 6 V 6.5 V
7 V
10 V
1
3
5
7
9
0 100 200 300
ID [A]
RDS(on) [mΩ]
-55 °C
25 °C
175 °C
0
50
100
150
200
250
300
350
400
34567
VGS [V]
ID [A]
Rev. 1.0 page 5 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
70 µA
350 µA
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
VDS [V]
C [pF]
101
25 °C
100 °C
150 °C
1
10
100
1000
1 10 100 1000
tAV [µs]
IAV [A]
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
Rev. 1.0 page 6 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
13 Avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA
parameter: ID
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID = 100 A pulsed
parameter: VDD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
35
37
39
41
43
45
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
8 V
32 V
0
1
2
3
4
5
6
7
8
9
10
0 20406080
Qgate [nC]
VGS [V]
100 A
50 A
25 A
0
100
200
300
400
500
600
25 75 125 175
Tj [°C]
EAS [mJ]
Rev. 1.0 page 7 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2010-04-13
IPB100N04S4-H2
IPI100N04S4-H2, IPP100N04S4-H2
Revision History
Version
Revision 1.0
Date
13.04.2010
Changes
Final Data Sheet
Rev. 1.0 page 9 2010-04-13
