2N5550
2N5551
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5550 and
2N5551 are silicon NPN transistors designed for high
voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N5550 2N5551 UNITS
Collector-Base Voltage VCBO 160 180 V
Collector-Emitter Voltage VCEO 140 160 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 625 mW
Power Dissipation (TC=25°C) PD 1.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 200 °C/W
Thermal Resistance JC 125 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5550 2N5551
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=100V - 100 - - nA
ICBO V
CB=120V - - - 50 nA
ICBO V
CB=100V, TA=100°C - 100 - - μA
ICBO V
CB=120V, TA=100°C - - - 50 μA
IEBO V
EB=4.0V - 50 - 50 nA
BVCBO I
C=100μA 160 - 180 - V
BVCEO I
C=1.0mA 140 - 160 - V
BVEBO I
E=10μA 6.0 - 6.0 - V
VCE(SAT) I
C=10mA, IB=1.0mA - 0.15 - 0.15 V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.25 - 0.20 V
VBE(SAT) I
C=10mA, IB=1.0mA - 1.0 - 1.0 V
VBE(SAT) I
C=50mA, IB=5.0mA - 1.2 - 1.0 V
hFE V
CE=5.0V, IC=1.0mA 60 - 80 -
hFE V
CE=5.0V, IC=10mA 60 250 80 250
hFE V
CE=5.0V, IC=50mA 20 - 30 -
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 50 200 50 200
fT V
CE=10V, IC=10mA, f=100MHz 100 300 100 300 MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 6.0 - 6.0 pF
Cib V
BE=0.5V, IC=0, f=1.0MHz - 30 - 20 pF
NF VCE=5.0V, IC=250μA,
R
S=1.0Ω, f=10Hz to 15.7kHz - 10 - 8.0 dB
R1 (2-December 2014)
www.centralsemi.com
2N5550
2N5551
SILICON
NPN TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (2-December 2014)
2N5550
2N5551
SILICON
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (2-December 2014)
www.centralsemi.com
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(001)
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