5SDA 27F2002
TS - D/005/97c Sep-11 1 of 4
 5SDA 27F2002
Old part no. DA 808-2700-20
Avalanche Diode
Properties
Key Parameters
low on-state voltage
VRRM
=
2 000
V
avalanche reverse characteristics
IFAVm
=
2 700
A
high operational reliability
IFSM
=
31 000
A
suitable for parallel operation
VTO
=
0.790
V
rT
=
0.090
m
Types
VRRM
5SDA 27F2002
2 000 V
Conditions:
Tj = -40 ÷ 160 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm
Mounting force
22 ± 2
kN
m
Weight
0.46
kg
DS
Surface creepage
dstance
30
mm
Da
Air strike distance
20.5
mm
Fig. 1 Case

ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SDA 27F2002
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/005/97c Sep-11 2 of 4
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse voltage
Tj = -40 ÷ 160 °C
2 000
V
IFAVm
Average forward current
Tc = 85 °C
2 700
A
IFRMS
RMS forward current
Tc = 85 °C
4 240
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 8.3 ms
33 100
A
tp = 10 ms
31 000
A
I2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 8.3 ms
4 550 000
A2s
tp = 10 ms
4 805 000
A2s
PRSM
Maximum avalanche power dissipation
rectangular pulse 20 µs
100
kW
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Characteristics
Value
Unit
min
typ
max
VT0
Threshold voltage
0.790
V
rT
Forward slope resistance
IF = 2000 ÷ 6000 A
0.090
m
VFM
Maximum forward voltage
IFM = 4 000 A, Tj = 25 °C
1.050
1.200
V
Qrr
Recovered charge
VR = 100 V, IFM = 2 000 A, diF/dt = -5 A/
s
1 900
µC
Unless otherwise specified Tj = 160 °C
Thermal Parameters
Value
Unit
Rthjc
Thermal resistance
junction to case
double side cooling
20
K/kW
anode side cooling
34
cathode side cooling
48
Rthch
Thermal resistance
case to heatsink
double side cooling
5
K/kW
single side cooling
10
5SDA 27F2002
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/005/97c Sep-11 3 of 4
Transient Thermal Impedance
Analytical function for transient
thermal impedance
4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 22 ± 2 kN, Double side cooled
i
1
2
3
4
Ri( K/kW )
11.83
4.26
1.63
2.28
i ( s )
0.432
0.071
0.01
0.0054
0
2
4
6
8
10
12
14
16
18
20
22
0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance
junction to case Zthjc ( K/kW )
Fig. 2
Transient thermal impedance junction to case
0
2000
4000
6000
8000
10000
12000
14000
16000
0 0,5 1 1,5 2 2,5
VF ( V )
IF ( A )
160 °C
Tj = 25 °C
Fig. 3
Maximum forward voltage drop
characteristics
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
5SDA 27F2002
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/005/97c Sep-11 4 of 4
0
500
1000
1500
2000
2500
3000
3500
4000
0500 1000 1500 2000 2500 3000
IFAV ( A )
PT ( W )
120°
180°
DC
y
= 60°
0
500
1000
1500
2000
2500
3000
3500
4000
0500 1000 1500 2000 2500 3000
IFAV ( A )
PT ( W )
y
= 30°
60°
90°
120°
180°
270°
DC
Fig. 5
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 6
Forward power loss vs. average forward
current, square waveform, f = 50 Hz,
T = 1/f
60
70
80
90
100
110
120
130
140
150
160
170
0500 1000 1500 2000 2500 3000
IFAV ( A )
TC ( °C )
180°
120°
DC
y
= 60°
60
70
80
90
100
110
120
130
140
150
160
170
0500 1000 1500 2000 2500 3000
IFAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
y
= 30°
Fig. 7
Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz,
T = 1/f
Fig. 8
Max.case temperature vs. aver. forward
current, square waveform, f = 50 Hz,
T = 1/f
Notes: