Photomicrosensor (Transmissive) EE-SX129 Be sure to read Precautions on page 25. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * High-resolution model with a 0.2-mm-wide sensing aperture. * PCB mounting type. 13 Absolute Maximum Ratings (Ta = 25C) 8 1 +0.5 0 5 6 Item 0.5 min. 3 Part B 2.5 Optical axis 2 2.1+0.2 0 dia. A 2 holes Detector 13.42 0.25 0.5 9.20.3 0.8 1.940.2 E A C K E C A K Symbol Cross section AA Ambient temperature IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -40C to 100C Tsol 260C (see note 3) Internal Circuit E A C K Terminal No. Name A Anode K C E Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 0.375 6 < mm 10 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current 0.2 A B 30.3 5 8 5 2.5 R2.5 0.2 Emitter Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 920 nm typ. IF = 20 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA 88 EE-SX129 Photomicrosensor (Transmissive) Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Response time tr, tf (s) VCC = 5 V Ta = 25C VCE = 10 V 0 lx Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) -0.2 Load resistance RL (k) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Relative Light Current vs. Ambient Temperature Characteristics (Typical) -0.1 0 0.1 0.2 Distance d (mm) 0.3 0.4 Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 40 mA Forward current IF (mA) Dark current ID (nA) IF = 50 mA Ta = 70C Relative light current IL (%) Light current IL (mA) Ta = 25C Ta = 25C Forward voltage VF (V) Ambient temperature Ta (C) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = -30C Relative light current IL (%) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output Input 90 % 10 % Vcc Output EE-SX129 Photomicrosensor (Transmissive) 89