88 EE-SX129 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX129
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-resolution model with a 0.2-mm-wide sensing aperture.
•PCB mounting type.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
2.1
+0.2
0
dia. holes
Cross section AA
Optical
axis
Part B
0.5 min.
A
K
E
C
Unless otherwise specified, the
tolerances are as shown below.
13
8
5
6
3
0.25
A
A
13.4±2
2
5
8
0.2
3±0.3
B
1+0.5
0
E
C
A
K
E
C
A
K
0.5
0.8
1.94±0.2
0.2
2
2.5
2.5
R2.5
5
9.2±0.3
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent
IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –40°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP920 nm typ. IF = 20 mA
Detector Light current IL0.2 mA min. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age
VCE (sat) --- ---
Peak spectral sensitivity wave-
length
λP850 nm typ. VCE = 10 V
Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 25.