StrongIRFET™
IRFR7546PbF
IRFU7546PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
HEXFET® Power MOSFET
D
S
G
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
VDSS 60V
RDS(on) typ. 6.6m
max 7.9m
ID (Silicon Limited) 71A
ID (Package Limited) 56A
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
D-Pak
IRFR7546PbF
I-Pak
IRFU7546PbF
G D S
Gate Drain Source
D
G
S
D
G
S
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFR7546PbF Tube 75 IRFR7546PbF
Tape and Reel 2000 IRFR7546TRPbF
IRFU7546PbF I-Pak Tube 75 IRFU7546PbF
D-Pak
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
RDS(on), Drain-to -Source On Resistance (m)
ID = 43A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
ID, Drain Current (A)
Limited by package
IRFR/U7546PbF
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Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 71
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 50
IDM Pulsed Drain Current 280
PD @TC = 25°C Maximum Power Dissipation 99 W
Linear Derating Factor 0.66 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175 °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 120
Units
EAS (Thermally limited) Single Pulse Avalanche Energy 178
IAR Avalanche Current See Fig 15, 16, 23a, 23b A
EAR Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.52
°C/W
RJA Junction-to-Ambient (PCB Mount) ––– 50
RJA Junction-to-Ambient ––– 110
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 56
Symbol Parameter Max.
mJ
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 47 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 6.6 7.9 m VGS = 10V, ID = 43A
VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 100µA
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 60V, VGS = 0V
––– ––– 150 VDS = 60V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 1.5 –––
––– 8.5 ––– VGS = 6.0V, ID = 21A
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 130µH, RG = 50, IAS = 43A, VGS =10V.
ISD 43A, di/dt 1020A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R
is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V.
IRFR/U7546PbF
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Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 56 ––– ––– S VDS = 25V, ID = 43A
Qg Total Gate Charge ––– 58 87 ID = 43A
Qgs Gate-to-Source Charge ––– 14 ––– VDS = 30V
Qgd Gate-to-Drain Charge ––– 18 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg – Qgd) ––– 26 –––
td(on) Turn-On Delay Time ––– 8.1 –––
ns
VDD = 30V
tr Rise Time ––– 28 ––– ID = 43A
td(off) Turn-Off Delay Time ––– 36 ––– RG= 2.7
tf Fall Time ––– 20 ––– VGS = 10V
Ciss Input Capacitance ––– 3020 –––
pF
VGS = 0V
Coss Output Capacitance ––– 280 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig.7
Coss eff.(ER)
Effective Output Capacitance
(Energy Related) ––– 290 ––– VGS = 0V, VDS = 0V to 48V
Coss eff.(TR) Output Capacitance (Time Related) ––– 370 ––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 71
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 280 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 43A,VGS = 0V
dv/dt Peak Diode Recovery dv/dt––– 12 ––– V/ns TJ = 175°C,IS = 43A,VDS = 60V
trr Reverse Recovery Time ––– 26 –––
ns TJ = 25°C VDD = 51V
––– 29 ––– TJ = 125°C IF = 43A,
Qrr Reverse Recovery Charge ––– 22 –––
nC TJ = 25°C di/dt = 100A/µs
––– 30 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 1.5 ––– A TJ = 25°C
nC
D
S
G
IRFR/U7546PbF
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Fig 6. Normalized On-Resistance vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 43A
VGS = 10V
Fig 4. Typical Output Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
Fig 3. Typical Output Characteristics
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 5. Typical Transfer Characteristics
0 1020304050607080
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 43A
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
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-10 0 10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
Energy (µJ)
0.1 1 10
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
100µsec
DC
Limited by
package
Fig 10. Maximum Safe Operating Area
020 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
0
10
20
30
40
RDS(on), Drain-to -Source On Resistance (m)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
Fig 11. Drain-to-Source Breakdown Voltage
Fig 13. Typical On-Resistance vs. Drain Current
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
64
66
68
70
72
74
76
78
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 1.0mA
Fig 9. Typical Source-Drain Diode Forward Voltage
Fig 12. Typical Coss Stored Energy
IRFR/U7546PbF
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1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figure 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
E
AS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 43A
Fig 15. Avalanche Current vs. Pulse Width
IRFR/U7546PbF
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0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
10
12
IRRM (A)
IF = 43A
VR = 51V
TJ = 25°C
TJ = 125°C
Fig 17. Threshold Voltage vs. Temperature
0200 400 600 800 1000
diF /dt (A/µs)
0
50
100
150
200
QRR (nC)
IF = 43A
VR = 51V
TJ = 25°C
TJ = 125°C
Fig 21. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
0
50
100
150
200
QRR (nC)
IF = 28A
VR = 51V
TJ = 25°C
TJ = 125°C
Fig 18. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th), Gate threshold Voltage (V)
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
10
12
IRRM (A)
IF = 28A
VR = 51V
TJ = 25°C
TJ = 125°C
IRFR/U7546PbF
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Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 23a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 24a. Switching Time Test Circuit
Fig 25a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 23b. Unclamped Inductive Waveforms
Fig 24b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 25b. Gate Charge Waveform
VDD
IRFR/U7546PbF
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
INTERNATIONAL
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
OR
Note: "P" in assembly line position
EXAMPLE:
LOT CODE 1234
THIS IS AN IRFR120
WITH ASSEMBLY
indicates "Lead-Free"
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
PART NUMBER
WEEK 16
DATE CODE
YEAR 1 = 2001
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
ASSEMBLY
3412
IRFR120
116A
LINE A
34
RECTIFIER
LOGO
IRFR120
12
ASSEMBLY
LOT CODE
YEAR 1 = 2001
DATE CODE
PART NUMBER
WEEK 16
"P" in assembly line position indicates
"Lead-Free" qualification to the consumer-level
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
IRFR/U7546PbF
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches))
I-Pak (TO-251AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
78
LINE A
LOGO
INTERNATIONAL
RECTIFIER
OR
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
IRFU120
PART NUMBER
WEEK 19
DATE CODE
YEAR 1 = 2001
RECTIFIER
INTERNATIONAL
LOGO
ASSEMBLY
LOT CODE
IRFU120
56
DATE CODE
PART NUMBER
LOT CODE
ASSEMBLY
56 78
YEAR 1 = 2001
WEEK 19
119A
indicates Lead-Free"
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "A"
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFU120
LOT CODE 5678
IRFR/U7546PbF
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
IRFR/U7546PbF
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level D-Pak MSL1
I-Pak N/A
RoHS Compliant Yes
Revision History
Date Comment
11/7/2014
Updated EAS (L =1mH) = 178mJ on page 2
Updated note 10 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V” on page 2
Updated package outline on page 9 & 10
