HIGH-SPEED 2.5V IDT70T3339/19/99S 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 Features: True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access - Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) - Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.) Selectable Pipelined or Flow-Through output mode Counter enable and repeat features Dual chip enables allow for depth expansion without additional logic Interrupt and Collision Detection Flags Full synchronous operation on both ports - 5ns cycle time, 200MHz operation (14Gbps bandwidth) - Fast 3.4ns clock to data out - Data input, address, byte enable and control registers - 1.5ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 200MHz - Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility Dual Cycle Deselect (DCD) for Pipelined Output Mode 2.5V (100mV) power supply for core LVTTL compatible, selectable 3.3V (150mV) or 2.5V (100mV) power supply for I/Os and control signals on each port Industrial temperature range (-40C to +85C) is available at 166MHz and 133MHz Available in a 256-pin Ball Grid Array (BGA) and 208-pin fine pitch Ball Grid Array (fpBGA) Supports JTAG features compliant with IEEE 1149.1 Green parts available, see ordering information Functional Block Diagram UBL UBR LBL LBR FT/PIPEL 1/0 0a 1a 0b 1b 1b 0b 1a 0a a b b a FT/PIPER 1/0 R/WL R/WR CE0L CE1L CE0R CE1R 1 1 B B WW 0 1 L L 0 1/0 B B WW 1 0 R R Dout0-8_L Dout9-17_L OEL 0 1/0 OER Dout0-8_R Dout9-17_R 0a 1a 0b 1b 1b 0b 1a 0a FT/PIPEL 0/1 512/256/128K x 18 MEMORY ARRAY ab Din_L I/O0L - I/O17L , FT/PIPER 0/1 ba I/O0R - I/O17R Din_R CLKR CLKL Counter/ Address Reg. A0L REPEATL ADSL CNTEN L , A18R (1) A18L (1) ADDR_L Counter/ Address Reg. ADDR_R A 0R REPEATR ADSR CNTENR TDI INTERRUPT COLLISION DETECTION LOGIC CE 0 L CE1L R/W L JTAG CE0 R CE1 R TDO TCK TMS TRST R/W R COL L INTL COLR INTR (2) ZZL ZZ CONTROL LOGIC ZZR (2) NOTES: 1. Address A18 is a NC for the IDT70T3319. Also, Addresses A18 and A17 are NC's for the IDT70T3399. 2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. 5652 drw 01 FEBRUARY 2018 1 (c)2018 Integrated Device Technology, Inc. DSC-5652/9 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Description: Industrial and Commercial Temperature Ranges The IDT70T3339/19/99 is a high-speed 512/256/128k x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70T3339/19/99 has been optimized for applications having unidirec- tional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The IDT70T3339/19/99 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. 6.42 2 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Configuration (3,4,5,6,9) 70T3339/19/99BC BC-256(8) 256-Pin BGA Top View(9) A1 NC B1 INTL C1 A2 TDI B2 NC C2 COLL I/O9L D1 NC E1 D2 I/O9R E2 I/O10R I/O10L F1 I/O11L G1 NC H1 NC J1 F2 NC G2 NC H2 I/O12R J2 A3 NC B3 A4 A5 A17L(2) A14L B4 B5 TDO A18L(1) A15L C3 V SS D3 NC E3 NC F3 C4 A16L D4 C5 A13L D5 E4 E5 VDDQL VDD F4 G4 I/O12L VDDQR H3 F5 H4 G5 VSS H5 NC VDDQR VSS J3 J4 J5 I/O13L I/O14R I/O13R VDDQL ZZ R K1 NC L1 I/O15L M1 K2 NC L2 NC M2 I/O16R I/O16L N1 NC P1 N2 I/O17R P2 K3 INTR T1 NC R2 NC T2 TCK K5 L4 L5 I/O15R VDDQR VDD M3 NC N3 NC P3 COLR I/O17L TMS R1 K4 I/O14L VDDQL VSS L3 R3 M4 VDDQR N4 M5 VDD NC B6 A12L C6 A10L D6 A7 A8L B7 A9L C7 A7L D7 A9 A8 NC CE1L B9 B8 UBL NC LBL D9 D8 A11 A12 OEL CNTENL A5L B10 B11 CE0L R/WL REPEATL C9 C8 A10 C10 C11 CLKL ADSL D10 D11 B12 A4L C12 A6L D12 N5 E6 VDD E7 NC F7 F6 NC G6 VSS H6 VSS J6 VSS K6 VSS L6 NC M6 VDD N6 NC G7 VSS H7 VSS J7 E8 E9 VSS F9 F8 VSS K7 VSS L7 NC M7 NC N7 VSS G9 G8 VSS H8 VSS H9 VSS J8 VSS VSS VSS J9 VSS K8 VSS K9 VSS L8 VSS L9 VSS VSS M9 M8 VSS N8 VSS N9 E10 VSS F10 VSS G10 VSS H10 V SS J10 VSS K10 VSS L10 V SS M10 VSS N10 E11 VDD F11 VSS G11 VSS H11 VSS J11 VSS K11 VSS L11 VSS M11 VDD N11 E12 A13 A2L B13 A1L C13 A3L D13 P4 A16R R4 P5 A13R R5 T4 T5 A17R(2) A14R P6 A10R R6 A 12R T6 A11R P7 A7R R7 A9R T7 A8R P8 P9 NC R8 LBR R9 UBR T8 F12 P11 CLKR ADSR R10 R11 CE1R T10 T11 F13 A14 A0L B14 VDD C14 OPTL D14 NC E14 NC F14 VDD V DDQR I/O6R G12 VSS H12 VSS J12 G13 G14 VDDQL I/O5L H13 VDDQL J13 H14 NC J14 A15 NC B15 NC C15 NC D15 NC E15 K12 VSS L12 VDD M12 VDD N12 P12 A6R R12 T12 OER CNTENR A5R K13 K14 V DDQR NC L13 L14 V DDQL I/O2L M13 M14 F15 NC G15 NC H15 NC J15 K15 NC L15 NC M15 V DDQL I/O1R I/O1L N13 VDD P13 A3R R13 A1R T13 A2R N14 NC P14 NC R14 OPTR T14 A0R A16 NC B16 NC C16 I/O8L D16 I/O8R E16 I/O7L I/O7R ZZL V DDQR I/O4R I/O3R CE0R R/WR REPEAT R A4R T9 NC P10 E13 VDD V DDQR PIPE/FTR VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL TRST A18R(1) A15R T3 A 11L PIPE/FTL VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O11R VDDQL VDD G3 A6 N15 I/O0R P15 NC R15 NC T15 NC F16 I/O6L G16 NC H16 I/O5R J16 I/O4L K16 I/O3L L16 I/O2R M16 NC N16 NC P16 I/O0L R16 NC T16 NC 5652 drw 02d NOTES: 1. Pin is a NC for IDT70T3319 and IDT70T3399. 2. Pin is a NC for IDT70T3399. 3. All VDD pins must be connected to 2.5V power supply. 4. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VDD (2.5V), and 2.5V if OPT pin for that port is set to VSS (0V). 5. All VSS pins must be connected to ground supply. 6. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch. 7. This package code is used to reference the package diagram. 8. This text does not indicate orientation of the actual part-marking. 9. Pins A15 and T15 will be VREFL and VREFR respectively for future HSTL device. 6.42 3 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Configurations(con't)(3,4,5,6,9) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 I/O9L INTL VSS TDO NC A16L A12L A8L NC VDD CLKL CNTEN L A4L A0L OPT L NC VSS A NC VSS COLL TDI A17L(2) A13L A9L NC CE0L VSS ADSL A5L A1L NC VDDQR I/O8L NC B VDDQL I/O9R VDDQR PIPE/FTL A18L(1) A14L A10L UBL CE1L VSS R/WL A6L A2L VDD I/O8R NC VSS C NC VSS I/O10L A11L A7L LBL VDD A3L VDD NC VDDQL I/O7L I/O7R D I/O11L NC VDDQR I/O10R I/O6L NC VSS NC E VDDQL I/O11R NC A15L OEL REPEATL NC VSS VSS I/O6R NC VDDQR F NC NC VDDQL I/O5L NC G VDD NC VSS I/O5R H ZZL VDD VSS VDDQR J I/O3R VDDQL I/O4R VSS K NC VSS I/O12L VDD NC VDDQR I/O12R VDDQL VDD VSS ZZR I/O14R VSS I/O13R VSS NC I/O14L VDDQR I/O13L NC I/O3L VSS I/O4L L VDDQL NC I/O15R VSS VSS NC I/O2R VDDQR M NC VSS NC I/O15L I/O1R VDDQL NC I/O2L N I/O16R I/O16L VSS NC NC I/O17L VSS INTR PIPE/FTR NC 70T3339/19/99BF BF-208(7) 208-Pin fpBGA Top View(8) VDDQR COLR TRST A16R A12R A8R NC VDD CLKR CNTEN R A4R NC I/O1L VSS NC P I/O17R TCK A17R(2) A13R A9R NC CE0R VSS ADSR A5R A1R NC VDDQL I/O0R VDDQR R VDDQL TMS A18R(1) A14R A10R UBR CE1R VSS R/WR A6R A2R VSS NC VSS NC T A15R A11R A7R LBR VDD A3R A0R VDD OPT R NC I/O0L U OER REPEATR 5652 drw 02c NOTES: 1. Pin is a NC for IDT70T3319 and IDT70T3399. 2. Pin is a NC for IDT70T3399. 3. All VDD pins must be connected to 2.5V power supply. 4. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VDD (2.5V), and 2.5V if OPT pin for that port is set to VSS (0V). 5. All VSS pins must be connected to ground supply. 6. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch. 7. This package code is used to reference the package diagram. 8. This text does not indicate orientation of the actual part-marking. 9. Pins B14 and R14 will be VREFL and VREFR respectively for future HSTL device. 6.42 4 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Names Left Port Right Port Names CE0L, CE1L CE0R, CE1R Chip Enables (Input)(6) R/WL R/WR Read/Write Enable (Input) OEL OER (5) Output Enable (Input) (5) A0L - A18L A0R - A18R Address (Input) I/O0L - I/O17L I/O0R - I/O17R Data Input/Output CLKL CLKR Clock (Input) PL/FTL PL/FTR Pipeline/Flow-Through (Input) ADSL ADSR Address Strobe Enable (Input) CNTENL CNTENR Counter Enable (Input) REPEATL REPEATR Counter Repeat(3) UBL UBR Upper Byte Enable (I/O9 - I/O17)(6) LBL LBR Lower Byte Enable (I/O0 - I/O8)(6) VDDQL VDDQR Power (I/O Bus) (3.3V or 2.5V)(1) (Input) OPTL OPTR Option for selecting V DDQX(1,2) (Input) ZZL ZZR Sleep Mode pin(4) (Input) VDD Power (2.5V)(1) (Input) VSS Ground (0V) (Input) TDI Test Data Input TDI Test Data Output TCK Test Logic Clock (10MHz) (Input) TMS Test Mode Select (Input) TRST Reset (Initialize TAP Controller) (Input) INTL INTR Interrupt Flag (Output) COLL COLR Collision Alert (Output) 5652 tbl 01 NOTES: 1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on the I/Os and controls for that port. 2. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VDD (2.5V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPTX is set to VSS (0V), then that port's I/Os and address controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another--both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. 3. When REPEATX is asserted, the counter will reset to the last valid address loaded via ADSX. 4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. It is recommended that boundry scan not be operated during sleep mode. 5. Address A18x is a NC for the IDT70T3319. Also, Addresses A18x and A17x are NC's for the IDT70T3399. 6. Chip Enables and Byte Enables are double buffered when PL/FT = VIH, i.e., the signals take two cycles to deselect. 6.42 5 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Truth Table I--Read/Write and Enable Control (1,2,3,4) OE CLK CE0 CE1 UB LB R/W ZZ Upper Byte I/O9-17 Lower Byte I/O0-8 X H X X X X L High-Z High-Z Deselected-Power Down X X L X X X L High-Z High-Z Deselected-Power Down X L H H H X L High-Z High-Z Both Bytes Deselected X L H H L L L High-Z DIN Write to Lower Byte Only X L H L H L L DIN High-Z Write to Upper Byte Only X L H L L L L DIN DIN L L H H L H L High-Z DOUT Read Lower Byte Only L L H L H H L DOUT High-Z Read Upper Byte Only L L H L L H L DOUT DOUT Read Both Bytes H L H L L X L High-Z High-Z Outputs Disabled X X X X X X X H High-Z High-Z Sleep Mode MODE Write to Both Bytes NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, REPEAT = X. 3. OE and ZZ are asynchronous input signals. 4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here. Truth Table II--Address Counter Control Address Previous Internal Address Internal Address Used CLK An X An ADS L(4) CNTEN REPEAT(6) I/O(3) X H DI/O (n) 5652 tbl 02 (1,2) MODE External Address Used X An An + 1 H L H DI/O(n+1) Counter Enabled--Internal Address generation X An + 1 An + 1 H H H DI/O(n+1) External Address Blocked--Counter disabled (An + 1 reused) An X (4) X X X (5) L DI/O(n) Counter Set to last valid ADS load 5652 tbl 03 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, UB, LB and OE. 3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle. 4. ADS and REPEAT are independent of all other memory control signals including CE0, CE1, UB and LB. 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, UB and LB. 6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location. 6.42 6 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Maximum Operating Temperature and Supply Voltage(1) Grade Commercial Ambient Temperature GND VDD 0 C to +70 C 0V 2.5V + 100mV -40 C to +85 C 0V 2.5V + 100mV O Industrial O O O NOTE: 1. This is the parameter TA. This is the "instant on" case temperature. 5652 tbl 04 Recommended DC Operating Conditions with VDDQ at 2.5V Symbol Parameter Min. Typ. Max. Unit VDD Core Supply Voltage 2.4 2.5 2.6 V VDDQ I/O Supply Voltage (3) 2.4 2.5 2.6 V VSS Ground 0 0 0 V VIH Input High Volltage (Address, Control & Data I/O Inputs)(3) 1.7 ____ VDDQ + 100mV(2) V VIH Input High Voltage JTAG 1.7 ____ VDD + 100mV(2) V VIH Input High Voltage ZZ, OPT, PIPE/FT VDD - 0.2V ____ VDD + 100mV(2) V (1) _ VIL Input Low Voltage -0.3 ____ 0.7 V VIL Input Low Voltage ZZ, OPT, PIPE/FT -0.3(1) ____ 0.2 V 5652 tbl 05a NOTES: 1. VIL (min.) = -1.0V for pulse width less than tCYC/2 or 5ns, whichever is less. 2. VIH (max.) = VDDQ + 1.0V for pulse width less than tCYC/2 or 5ns, whichever is less. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to Vss(0V), and VDDQX for that port must be supplied as indicated above. Recommended DC Operating Conditions with VDDQ at 3.3V Symbol VDD Parameter Min. Typ. Max. Unit 2.4 2.5 2.6 V 3.15 3.3 3.45 V 0 0 0 V 2.0 ____ VDDQ + 150mV(2) V 1.7 ____ VDD + 100mV(2) V VDD - 0.2V ____ VDD + 100mV(2) V Core Supply Voltage (3) VDDQ I/O Supply Voltage VSS Ground VIH Input High Voltage (Address, Control &Data I/O Inputs)(3) VIH Input High Voltage JTAG VIH Input High Voltage ZZ, OPT, PIPE/FT VIL Input Low Voltage -0.3(1) ____ 0.8 V VIL Input Low Voltage ZZ, OPT, PIPE/FT -0.3(1) ____ 0.2 V _ 5652 tbl 05b NOTES: 1. VIL (min.) = -1.0V for pulse width less than tCYC/2, or 5ns, whichever is less. 2. VIH (max.) = VDDQ + 1.0V for pulse width less than tCYC/2 or 5ns, whichever is less. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be supplied as indicated above. 6.42 7 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Absolute Maximum Ratings(1) Symbol Rating Commercial & Industrial Unit V TERM (VDD) V DD Terminal Voltage with Respect to GND V TERM(2) (VDDQ) V DDQ Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V V TERM(2) (INPUTS and I/O's) Input and I/O Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V TBIAS(3) Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C TJN Junction Temperature +150 o C -0.5 to 3.6 IOUT(For VDDQ = 3.3V) DC Output Current 50 IOUT(For VDDQ = 2.5V) DC Output Current 40 V mA mA 5652 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected. Capacitance(1) (TA = +25C, f = 1.0MHz) PQFP ONLY Symbol CIN Parameter Conditions(2) Max. Unit VIN = 3dV 8 pF VOUT = 3dV 10.5 Input Capacitance (3) COUT Output Capacitance pF 5652 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V 100mV) 70T3339/19/99S Symbol |ILI| |ILI| |ILO| Parameter Test Conditions Input Leakage Current(1) (1,2) JTAG & ZZ Input Leakage Current (1,3) Max. Unit VDDQ = Max., VIN = 0V to VDDQ ___ 10 A VDD = Max., VIN = 0V to VDD ___ 30 A CE0 = VIH or CE1 = VIL, VOUT = 0V to V DDQ ___ 10 A (1) IOL = +4mA, VDDQ = Min. ___ 0.4 V (1) IOH = -4mA, VDDQ = Min. 2.4 ___ V VOL (2.5V) Output Low Voltage (1) IOL = +2mA, VDDQ = Min. ___ 0.4 V VOH (2.5V) Output High Voltage (1) IOH = -2mA, VDDQ = Min. 2.0 ___ V VOL (3.3V) VOH (3.3V) Output Leakage Current Min. Output Low Voltage Output High Voltage 5652 tbl 08 NOTES: 1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.6 for details. 2. Applicable only for TMS, TDI and TRST inputs. 3. Outputs tested in tri-state mode. 6.42 8 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (3)(VDD = 2.5V 100mV) 70T3339/19/99 S200 Com'l Only(8) Symbol IDD ISB1(6) ISB2(6) ISB3 ISB4(6) Izz Parameter Test Condition Version 70T3339/19/99 S166 Com'l & Ind(7) 70T3339/19/99 S133 Com'l & Ind Typ.(4) Max. Typ.(4) Max. Typ.(4) Max. Dynamic Operating Current (Both Ports Active) CEL and CER= VIL, Outputs Disabled, f = fMAX(1) COM'L S 375 525 320 450 260 370 IND S ___ ___ 320 510 260 450 Standby Current (Both Ports - TTL Level Inputs) CEL = CER = VIH f = fMAX(1) COM'L S 205 270 175 230 140 190 IND S ___ ___ 175 275 140 235 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(1) COM'L S 300 375 250 325 200 250 IND S ___ ___ 250 365 200 310 Full Standby Current (Both Ports - CMOS Level Inputs) Both Ports CEL and CER > VDDQ - 0.2V, VIN > VDDQ - 0.2V or VIN < 0.2V, f = 0(2) COM'L S 5 15 5 15 5 15 IND S ___ ___ 5 20 5 20 Full Standby Current (One Port - CMOS Level Inputs) CE"A" < 0.2V and CE"B" > VDDQ - 0.2V(5) VIN > VDDQ - 0.2V or VIN < 0.2V Active Port, Outputs Disabled, f = fMAX(1) COM'L S 300 375 250 325 200 250 IND S ___ ___ 250 365 200 310 Sleep Mode Current (Both Ports - TTL Level Inputs) ZZL = ZZR = VIH f=fMAX(1) COM'L S 5 15 5 15 5 15 IND S ___ ___ 5 20 5 20 Unit mA mA mA mA mA mA 5652 tbl 09 NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS". 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 2.5V, TA = 25C for Typ, and are not production tested. IDD DC(f=0) = 15mA (Typ). 5. CEX = VIL means CE0X = VIL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VDDQ - 0.2V CEX > VDDQ - 0.2V means CE0X > VDDQ - 0.2V or CE1X - 0.2V "X" represents "L" for left port or "R" for right port. 6. ISB1, ISB2 and ISB4 will all reach full standby levels (ISB3) on the appropriate port(s) if ZZL and/or ZZR = VIH. 7. 166MHz I-Temp is not available in the BF-208 package. 8. 200Mhz is not available in the BF-208 package. 6.42 9 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Test Conditions (VDDQ - 3.3V/2.5V) Input Pulse Levels (Address & Controls) GND to 3.0V/GND to 2.4V Input Pulse Levels (I/Os) GND to 3.0V/GND to 2.4V Input Rise/Fall Times 2ns Input Timing Reference Levels 1.5V/1.25V Output Reference Levels 1.5V/1.25V Output Load Figures 1 and 2 5652 tbl 10 50 50 DATAOUT 1.5V/1.25 10pF (Tester) 5652 drw 03 Figure 1. AC Output Test load. tCD (Typical, ns) Capacitance (pF) from AC Test Load 6.42 10 5652 drw 04 , IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) (2,3) (VDD = 2.5V 100mV, TA = 0C to +70C) Symbol Parameter 70T3339/19/99 S200 Com'l Only(5) 70T3339/19/99 S166 Com'l & Ind(4) 70T3339/19/99 S133 Com'l & Ind Min. Max. Min. Max. Min. Max. Unit tCYC1 Clock Cycle Time (Flow-Through)(1) 15 ____ 20 ____ 25 ____ ns tCYC2 Clock Cycle Time (Pipelined)(1) 5 ____ 6 ____ 7.5 ____ ns tCH1 Clock High Time (Flow-Through)(1) 6 ____ 8 ____ 10 ____ ns tCL1 Clock Low Time (Flow-Through)(1) 6 ____ 8 ____ 10 ____ ns 2 ____ 2.4 ____ 3 ____ ns 2 ____ 2.4 ____ 3 ____ ns (2) tCH2 Clock High Time (Pipelined) tCL2 Clock Low Time (Pipelined)(1) tSA Address Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHA Address Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSC Chip Enable Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHC Chip Enable Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSB Byte Enable Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHB Byte Enable Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSW R/W Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHW R/W Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSD Input Data Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHD Input Data Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSAD ADS Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHAD ADS Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSCN CNTEN Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHCN CNTEN Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSRPT REPEAT Setup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHRPT REPEAT Hold Time 0.5 ____ 0.5 ____ 0.5 ____ ns ____ tOE Output Enable to Data Valid 4.4 ____ 4.4 ____ 4.6 ns tOLZ(6) Output Enable to Output Low-Z 1 ____ 1 ____ 1 ____ ns tOHZ(6) Output Enable to Output High-Z 1 3.4 1 3.6 1 4.2 ns tCD1 Clock to Data Valid (Flow-Through)(1) ____ 10 ____ 12 ____ 15 ns tCD2 Clock to Data Valid (Pipelined)(1) ____ 3.4 ____ 3.6 ____ 4.2 ns tDC Data Output Hold After Clock High 1 ____ 1 ____ 1 ____ ns tCKHZ(6) Clock High to Output High-Z 1 3.4 1 3.6 1 4.2 ns tCKLZ(6) Clock High to Output Low-Z 1 ____ 1 ____ 1 ____ ns tINS Interrupt Flag Set Time ____ 7 ____ 7 ____ 7 ns tINR Interrupt Flag Reset Time ____ 7 ____ 7 ____ 7 ns tCOLS Collision Flag Set Time ____ 3.4 ____ 3.6 ____ 4.2 ns tCOLR Collision Flag Reset Time ____ 3.4 ____ 3.6 ____ 4.2 ns tZZSC Sleep Mode Set Cycles 2 ____ 2 ____ 2 ____ cycles tZZRC Sleep Mode Recovery Cycles 3 ____ 3 ____ 3 ____ cycles 4 ____ 5 ____ 6 ____ ns Port-to-Port Delay tCO Clock-to-Clock Offset tOFS Clock-to-Clock Offset for Collision Detection Please refer to Collision Detection Timing Table on Page 20 5652 tbl 11 NOTES: 1. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VDD (2.5V). Flow-through parameters (tCYC1, tCD1) apply when FT/PIPE = Vss (0V) for that port. 2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE), FT/PIPE and OPT. FT/PIPE and OPT should be treated as DC signals, i.e. steady state during operation. 3. These values are valid for either level of VDDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port. 4. 166MHz I-Temp is not available in the BF-208 package. 5. 200Mhz is not available in the BF-208 package. 6. Guaranteed by design (not production tested). 6.42 11 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Pipelined Operation (FT/PIPE'X' = VIH)(2) tCYC2 tCH2 tCL2 CLK CE0 tSC tSC tHC tHC (3) CE1 tSB tSB tHB UB, LB tHB (5) R/W tSW tHW tSA (4) ADDRESS tHA An An + 1 An + 2 (1 Latency) tDC tCD2 DATAOUT Qn tCKLZ OE An + 3 Qn + 1 Qn + 2 (5) (1) tOHZ tOLZ (1) , tOE 5652 drw 05 Timing Waveform of Read Cycle for Flow-through Output (FT/PIPE"X" = VIL)(2,6) tCYC1 tCH1 tCL1 CLK CE0 tSC tSC tHC CE1 tSB tHB UB, LB tSB R/W tHB tSW tHW tSA ADDRESS tHC (3) (4) tHA An An + 1 tCD1 DATAOUT An + 2 tCKHZ Qn Qn + 2(5) Qn + 1 tCKLZ OE An + 3 tDC tOHZ tOLZ tDC (1) tOE , 5652 drw 06 NOTES: 1. OE is asynchronously controlled; all other inputs depicted in the above waveforms are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and REPEAT = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, UB, LB = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If UB, LB was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 6. "x" denotes Left or Right port. The diagram is with respect to that port. 6.42 12 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of a Multi-Device Pipelined Read(1,2) tCH2 tCYC2 tCL2 CLK tSA tHA A0 ADDRESS(B1) tSC tHC CE0(B1) tSC tHC tCD2 tCD2 Q0 DATAOUT(B1) tCKHZ tSA Q3 tCKLZ tDC tCKHZ tHA A0 tSC A6 A5 A4 A3 A2 A1 tSC CE0(B2) tCD2 Q1 tDC ADDRESS(B2) A6 A5 A4 A3 A2 A1 tHC tHC tCD2 tCKHZ tCD2 , DATAOUT(B2) Q4 Q2 tCKLZ tCKLZ 5652 drw 07 Timing Waveform of a Multi-Device Flow-Through Read(1,2) tCH1 tCYC1 tCL1 CLK tSA ADDRESS(B1) CE0(B1) tH A A0 tSC tHC tSC tHC tCD1 tCD1 D0 DATAOUT(B1) tCKHZ tSA (1) tCD1 tCD1 D3 D1 tDC ADDRESS(B2) A6 A5 A4 A3 A2 A1 tCKLZ tDC (1) D5 tCKHZ(1) tCKLZ (1) tHA A0 A1 A6 A5 A4 A3 A2 tSC tHC CE0(B2) tSC tHC tCD1 DATAOUT(B2) tCKLZ (1) tCKHZ (1) tCD1 D2 tCKLZ (1) tCKHZ (1) D4 , 5652 drw 08 NOTES: 1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70T3339/19/99 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. UB, LB, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and REPEAT = VIH. 6.42 13 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Left Port Write to Pipelined Right Port Read(1,2,4) CLK"A" tSW tHW tSA tHA R/W"A " ADDRESS"A" tSD DATAIN"A" NO MATC H MATC H tHD VALID tCO(3) CLK"B" tCD2 R/W"B" ADDRESS"B" tSW tHW tSA tHA NO MATCH MATC H DATAOUT"B" VALID , tDC 5652 drw 09 NOTES: 1. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 2. OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + 2 tCYC2 + tCD2). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + tCYC2 + tCD2). 4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A" Timing Waveform with Port-to-Port Flow-Through Read(1,2,4) CLK "A" tSW tHW R/W "A" tSA ADDRESS "A" NO MATCH MATCH tSD DATAIN "A" tHA tHD VALID tCO (3) CLK "B" tCD1 R/W "B" ADDRESS "B" tSW tHW tSA tHA NO MATCH MATCH tCD1 DATAOUT "B" VALID VALID tDC tDC , 5652 drw 10 NOTES: 1. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + tCYC + tCD1). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + tCD1). 4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A". 6.42 14 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read tCYC2 (OE = VIL)(2) tCH2 tCL2 CLK CE0 tSC tHC CE1 tSB tHB UB, LB tSW tHW R/W tSW tHW (3) An tSA tHA ADDRESS An +1 An + 2 An + 3 An + 2 An + 4 tSD tHD DATAIN Dn + 2 tCD2 (1) tCKHZ tCD2 tCKLZ Qn + 3 Qn DATAOUT (4) READ NOP WRITE READ 5652 drw 11 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation". 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. , Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled)(2) tCH2 tCYC2 tCL2 CLK CE0 tSC tHC CE1 tSB tHB UB, LB tSW tHW R/W (3) ADDRESS tSW tHW An tSA tHA An +1 An + 2 tSD DATAIN Qn DATAOUT An + 4 An + 5 tHD Dn + 2 tCD2 (1) An + 3 Dn + 3 tCKLZ tCD2 Qn + 4 (4) tOHZ OE READ WRITE READ , NOTES: 5652 drw 12 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows. 6.42 15 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2) tCH1 tCYC1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB UB, LB tSW tHW R/W tSW tHW (3) ADDRESS tSA An tHA An +1 An + 2 An + 4 An + 3 An + 2 tSD tHD DATAIN Dn + 2 tCD1 (1) tCD1 Qn DATAOUT tCD1 tCD1 Qn + 1 tDC tCKLZ tCKHZ READ NOP (4) WRITE Qn + 3 tDC READ , 5652 drw 13 Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(2) tCYC1 tCH1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB UB, LB tSW tHW R/W tSW tHW (3) An tSA tHA ADDRESS An +1 DATAIN (1) DATAOUT An + 2 tSD tHD An + 3 Dn + 2 Dn + 3 tDC tCD1 An + 4 tOE tCD1 Qn tCKLZ tOHZ An + 5 tCD1 Qn + 4 tDC OE READ WRITE READ , 5652 drw 14 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 6.42 16 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read with Address Counter Advance(1) tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS tSAD tHAD ADS tSAD tHAD CNTEN tSCN tHCN tCD2 DATAOUT Qx - 1(2) , Qn + 2(2) Qn + 1 Qn Qx Qn + 3 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5652 drw 15 Timing Waveform of Flow-Through Read with Address Counter Advance(1) tCYC1 tCH1 tCL1 CLK tSA ADDRESS tHA An tSAD tHAD ADS tSAD tHAD tSCN tHCN CNTEN tCD1 DATAOUT Qx(2) Qn Qn + 1 Qn + 2 Qn + 3(2) , Qn + 4 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5652 drw 16 NOTES: 1. CE0, OE, UB, LB = VIL; CE1, R/W, and REPEAT = VIH. 2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks. 6.42 17 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs)(1) tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS INTERNAL(3) ADDRESS An(7) An + 2 An + 1 An + 4 An + 3 tSAD tHAD ADS tSCN tHC N CNTEN tSD tHD Dn + 1 Dn DATAIN WRITE EXTERNAL ADDRESS Dn + 1 Dn + 4 Dn + 3 Dn + 2 WRITE WRITE WITH COUNTER COUNTER HOLD WRITE WITH COUNTER , 5652 drw 17 Timing Waveform of Counter Repeat(2) tCH2 tCYC2 tCL2 CLK tSA tHA (4) An ADDRESS INTERNAL(3) ADDRESS LAST ADS LOAD Ax An + 2 An + 1 LAST ADS +1 An An + 1 tSW tHW R/W ADS tSAD tHAD CNTEN tSCN tHCN tSRPT tHRPT REPEAT tSD tHD D0 DATAIN (5) QLAST DATAOUT EXECUTE REPEAT (6) WRITE LAST ADS ADDRESS READ LAST ADS ADDRESS READ LAST ADS ADDRESS + 1 QLAST+1 READ ADDRESS n READ ADDRESS n+1 Qn , NOTES: 5652 drw 18 1. CE0, UB, LB, and R/W = VIL; CE1 and REPEAT = VIH. 2. CE0, UB, LB = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid ADS load will be accessed. Extra cycles are shown here simply for clarification. For more information on REPEAT function refer to Truth Table II. 7. CNTEN = VIL advances Internal Address from `An' to `An +1'. The transition shown indicates the time required for the counter to advance. The `An +1'Address is written to during this cycle. 6.42 18 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Waveform of Interrupt Timing Industrial and Commercial Temperature Ranges (2) CLKL tSW tHW tSA tHA R/WL ADDRESS L(3) 7FFFF tSC tHC CE L(1) tINS INTR tINR CLKR tSC tHC CER(1) R/WR ADDRESSR(3) tSW tHW tSA tHA 7FFFF NOTES: 1. CE0 = VIL and CE1 = VIH 2. All timing is the same for Left and Right ports. 3. Address is for internal register, not the external bus, i.e., address needs to be qualified by one of the Address counter control signals. Truth Table III -- Interrupt Flag (1) Left Port CLKL R/WL (2) CEL (2) 5652 drw 19 Right Port A18L-A0L (3,4,5) INTL CLKR (2) R/WR CE R(2) A18R-A0R(3,4,5) INTR Function L L 7FFFF X X X X L Set Right INTR Flag X X X X H L 7FFFF H Reset Right INTR Flag X X X L L L 7FFFE X Set Left INTL Flag H L 7FFFE H X X X X Reset Left INTL Flag NOTES: 1. INTL and INTR must be initialized at power-up by Resetting the flags. 2. CE0 = VIL and CE1 = VIH. R/W and CE are synchronous with respect to the clock and need valid set-up and hold times. 3. A18X is a NC for IDT70T3319, therefore Interrupt Addresses are 3FFFF and 3FFFE. 4. A18X and A17X are NC's for IDT70T3399, therefore Interrupt Addresses are 1FFFF and 1FFFE. 5. Address is for internal register, not the external bus, i.e., address needs to be qualified by one of the Address counter control signals. 6.42 19 5652 tbl 12 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Waveform of Collision Timing (1,2) Both Ports Writing with Left Port Clock Leading CLKL tOFS tSA (4) tHA A3 A2 A1 A0 ADDRESSL tCOLR tCOLS COLL (3) tOFS CLKR tSA ADDRESSR tHA (4) A0 A3 A2 A1 tCOLR tCOLS COLR 5652 drw 20 NOTES: 1. CE0 = VIL, CE1 = VIH. 2. For reading port, OE is a Don't care on the Collision Detection Logic. Please refer to Truth Table IV for specific cases. 3. Leading Port Output flag might output 3tCYC2 + tCOLS after Address match. 4. Address is for internal register, not the external bus, i.e., address needs to be qualified by one of the Address counter control signals. Collision Detection Timing(3,4) Cycle Time tOFS (ns) Region 1 (ns) (1) Region 2 (ns) 5ns 0 - 2.8 2.81 - 4.6 6ns 0 - 3.8 3.81 - 5.6 7.5ns 0 - 5.3 5.31 - 7.1 NOTES: 1. Region 1 Both ports show collision after 2nd cycle for Addresses 0, 2, 4 etc. 2. Region 2 Leading port shows collision after 3rd cycle for addresses 0, 3, 6, etc. while trailing port shows collision after 2nd cycle for addresses 0, 2, 4 etc. 3. All the production units are tested to midpoint of each region. 4. These ranges are based on characterization of a typical device. (2) 5652 tbl 13 Truth Table IV -- Collision Detection Flag Left Port Right Port CLKL R/WL(1) CEL(1) A18L-A0L(2) COLL CLKR R/WR(1) CER(1) A18R-A0R(2) COLR Function H L MATCH H H L MATCH H Both ports reading. Not a valid collision. No flag output on either port. H L MATCH L L L MATCH H Left port reading, Right port writing. Valid collision, flag output on Left port. L L MATCH H H L MATCH L Right port reading, Left port writing. Valid collision, flag output on Right port. L L MATCH L L L MATCH L Both ports writing. Valid collision. Flag output on both ports. NOTES: 1. CE0 = VIL and CE1 = VIH. R/W and CE are synchronous with respect to the clock and need valid set-up and hold times. 2. Address is for internal register, not the external bus, i.e., address needs to be qualified by one of the Address counter control signals. 6.42 20 5652 tbl 14 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform - Entering Sleep Mode (1,2) R/W (3) Timing Waveform - Exiting Sleep Mode (1,2) An An+1 (5) R/W OE (5) Dn DATAOUT Dn+1 (4) NOTES: 1. CE1 = V IH. 2. All timing is same for Left and Right ports. 3. CE0 has to be deactivated (CE0 = VIH) three cycles prior to asserting ZZ (ZZx = VIH) and held for two cycles after asserting ZZ (ZZx = VIH). 4. CE0 has to be deactivated (CE0 = VIH) one cycle prior to de-asserting ZZ (ZZx = VIL) and held for three cycles after de-asserting ZZ (ZZx = VIL). 5. The device must be in Read Mode (R/W High) when exiting sleep mode. Outputs are active but data is not valid until the following cycle. 6.42 21 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Functional Description The IDT70T3339/19/99 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse width is independent of the cycle time. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70T3339/19/99s for depth expansion configurations. Two cycles are required with CE0 LOW and CE1 HIGH to re-activate the outputs. Interrupts If the user chooses the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is asserted when the right port writes to memory location 7FFFE (HEX), where a write is defined as CER = R/WR = VIL per the Truth Table. The left port clears the interrupt through access of address location 7FFFE when CEL = VIL and R/WL = VIH. Likewise, the right port interrupt flag (INT R ) is asserted when the left port writes to memory location 7FFFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location 7FFFF (3FFFF or 3FFFE for IDT70T3319 and 1FFFF or 1FFFE for IDT70T3399). The message (18 bits) at 7FFFE or 7FFFF (3FFFF or 3FFFE for IDT70T3319 and 1FFFF or 1FFFE for IDT70T3399) is user-defined since it is an addressable SRAM location. If the interrupt function is not used, address locations 7FFFE and 7FFFF (3FFFF or 3FFFE for IDT70T3319 and 1FFFF or 1FFFE for IDT70T3399) are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. Collision Detection Collision is defined as an overlap in access between the two ports resulting in the potential for either reading or writing incorrect data to a specific address. For the specific cases: (a) Both ports reading - no data is corrupted, lost, or incorrectly output, so no collision flag is output on either port. (b) One port writing, the other port reading - the end result of the write will still be valid. However, the reading port might capture data that is in a state of transition and hence the reading port's collision flag is output. (c) Both ports writing - there is a risk that the two ports will interfere with each other, and the data stored in memory will not be a valid write from either port (it may essentially be a random combination of the two). Therefore, the collision flag is output on both ports. Please refer to Truth Table IV for all of the above cases. The alert flag (COLX) is asserted on the 2nd or 3rd rising clock edge of the affected port following the collision, and remains low for one cycle. Please refer to Collision Detection Timing table on page 20. During that next cycle, the internal arbitration is engaged in resetting the alert flag (this avoids a specific requirement on the part of the user to reset the alert flag). If two collisions occur on subsequent clock cycles, the second collision may not generate the appropriate alert flag. A third collision will generate the alert flag as appropriate. In the event that a user initiates a burst access on both ports with the same starting address on both ports and one or both ports writing during each access (i.e., imposes a long string of collisions on contiguous clock cycles), the alert flag will be asserted and cleared every other cycle. Please refer to the Collision Detection Timing waveform on page 20. Collision detection on the IDT70T3339/19/99 represents a significant advance in functionality over current sync multi-ports, which have no such capability. In addition to this functionality the IDT70T3339/19/99 sustains the key features of bandwidth and flexibility. The collision detection function is very useful in the case of bursting data, or a string of accesses made to sequential addresses, in that it indicates a problem within the burst, giving the user the option of either repeating the burst or continuing to watch the alert flag to see whether the number of collisions increases above an acceptable threshold value. Offering this function on chip also allows users to reduce their need for arbitration circuits, typically done in CPLD's or FPGA's. This reduces board space and design complexity, and gives the user more flexibility in developing a solution. Sleep Mode The IDT70T3339/19/99 is equipped with an optional sleep or low power mode on both ports. The sleep mode pin on both ports is asynchronous and active high. During normal operation, the ZZ pin is pulled low. When ZZ is pulled high, the port will enter sleep mode where it will meet lowest possible power conditions. The sleep mode timing diagram shows the modes of operation: Normal Operation, No Read/Write Allowed and Sleep Mode. For normal operation all inputs must meet setup and hold times prior to sleep and after recovering from sleep. Clocks must also meet cycle high and low times during these periods. Three cycles prior to asserting ZZ (ZZx = VIH) and three cycles after de-asserting ZZ (ZZx = VIL), the device must be disabled via the chip enable pins. If a write or read operation occurs during these periods, the memory array may be corrupted. Validity of data out from the RAM cannot be guaranteed immediately after ZZ is asserted (prior to being in sleep). When exiting sleep mode, the device must be in Read mode (R/Wx = VIH)when chip enable is asserted, and the chip enable must be valid for one full cycle before a read will result in the output of valid data. During sleep mode the RAM automatically deselects itself. The RAM disconnects its internal clock buffer. The external clock may continue to run without impacting the RAMs sleep current (IZZ). All outputs will remain in high-Z state while in sleep mode. All inputs are allowed to toggle. The RAM will not be selected and will not perform any reads or writes. 6.42 22 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Depth and Width Expansion The IDT70T3339/19/99 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the various chip enables in order to expand two devices in depth. The IDT70T3339/19/99 can also be used in applications requiring expanded width, as indicated in Figure 4. Through combining the control signals, the devices can be grouped as necessary to accommodate applications needing 36-bits or wider. A19/A18/A17(1) IDT70T3339/19/99 CE0 CE1 IDT70T3339/19/99 CE1 VDD VDD Control Inputs Control Inputs IDT70T3339/19/99 CE0 IDT70T3339/19/99 CE1 CE1 CE0 CE0 Control Inputs Control Inputs Figure 4. Depth and Width Expansion with IDT70T3339/19/99 5652 drw 23 NOTE: 1. A19 is for IDT70T3339, A18 is for IDT70T3319, A17 is for IDT70T3399. 6.42 23 UB, LB, R/W, OE, CLK, ADS, REPEAT, CNTEN IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges JTAG Timing Specifications tJF tJCL tJCYC tJR tJCH TCK Device Inputs(1)/ TDI/TMS tJS Device Outputs(2)/ TDO tJDC tJH tJRSR tJCD TRST , 5652 drw 24 tJRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, and TRST. 2. Device outputs = All device outputs except TDO. JTAG AC Electrical Characteristics (1,2,3,4) 70T3339/19/99 Symbol Parameter Min. Max. Units tJCYC JTAG Clock Input Period 100 ____ ns tJCH JTAG Clock HIGH 40 ____ ns tJCL JTAG Clock Low 40 ____ ns tJR JTAG Clock Rise Time ____ (1) ns tJF JTAG Clock Fall Time ____ (1) 3 ns tJRST JTAG Reset 50 ____ ns tJRSR JTAG Reset Recovery 50 ____ ns tJCD JTAG Data Output ____ 25 ns tJDC JTAG Data Output Hold 0 ____ ns tJS JTAG Setup 15 ____ ns tJH JTAG Hold 15 ____ ns 3 5652 tbl 15 NOTES: 1. Guaranteed by design. 2. 30pF loading on external output signals. 3. Refer to AC Electrical Test Conditions stated earlier in this document. 4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet. 6.42 24 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Identification Register Definitions Instruction Field Value Revision Number (31:28) Description 0x0 Reserved for version number IDT Device ID (27:12) 0x333(1) IDT JEDEC ID (11:1) 0x33 ID Register Indicator Bit (Bit 0) Defines IDT part number Allows unique identification of device vendor as IDT 1 Indicates the presence of an ID register 5652 tbl 16 NOTE: 1. Device ID for IDT70T3319 is 0x334. Device ID for IDT70T3399 is 0x335. Scan Register Sizes Register Name Bit Size Instruction (IR) 4 Bypass (BYR) 1 Identification (IDR) 32 Boundary Scan (BSR) Note (3) 5652 tbl 17 System Interface Parameters Instruction Code Description EXTEST 0000 Forces contents of the boundary scan cells onto the device outputs (1). Places the boundary scan register (BSR) between TDI and TDO. BYPASS 1111 Places the bypass register (BYR) between TDI and TDO. IDCODE 0010 Loads the ID register (IDR) with the vendor ID code and places the register between TDI and TDO. 0100 Places the bypass register (BYR) between TDI and TDO. Forces all device output drivers to a High-Z state except COLx & INTx outputs. HIGHZ Uses BYR. Forces contents of the boundary scan cells onto the device outputs. Places the bypass register (BYR) between TDI and TDO. CLAMP 0011 SAMPLE/PRELOAD 0001 Places the boundary scan register (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the boundary scan cells via the TDI. 0101, 0111, 1000, 1001, 1010, 1011, 1100 Several combinations are reserved. Do not use codes other than those identified above. RESERVED PRIVATE 0110,1110,1101 For internal use only. 5652 tbl 18 NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, and TRST. 3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local IDT sales representative. 6.42 25 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Ordering Information XXXX A 999 A Device Type Power Speed Package A A A Process/ Temperature Range Blank 8 Tube or Tray Tape & Reel Blank I(4) Commercial (0C to +70C) Industrial (-40C to +85C) G(3) Green BC BF 256-pin BGA (BC-256) 208-pin fpBGA (BF-208) 200 166 133 Commercial Only(2) Commercial & Industrial(1) Commercial & Industrial S Standard Power 70T3339 70T3319 70T3399 9Mbit (512K x 18-bit) Synchronous Dual-Port RAM 4Mbit (256K x 18-bit) Synchronous Dual-Port RAM 2Mbit (128K x 18-bit) Synchronous Dual-Port RAM Speed in Megahertz 5652 drw 25 NOTES: 1. 166MHz I-Temp is not available in the BF-208 package. 2. 200Mhz is not available in the BF-208 package. 3. Green parts available. For specific speeds, packages and powers contact your local sales office. 4. Contact your local sales office for industrial temp range for other speeds, packages and powers. LEAD FINISH (SnPb) parts are in EOL process. Product Discontinuation Notice - PDN# SP-17-02 IDT Clock Solution for IDT70T3339/19/99 Dual-Port Dual-Port I/O Specitications IDT Dual-Port Part Number Voltage 70T3339/19/99 2.5 Clock Specifications I/O Input Capacitance Input Duty Cycle Requirement Maximum Frequency Jitter Tolerance IDT PLL Clock Device IDT Non-PLL Clock Device LVTTL 8pF 40% 200 75ps 5T2010 5T9010 5T905, 5T9050 5T907, 5T9070 5652 tbl 19 6.42 26 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Datasheet Document History 01/20/03: 04/25/03: 11/11/03: 04/08/04: 02/07/06: 07/28/08: 01/19/09: 04/20/10: 06/10/15: 02/08/18: Initial Datasheet Page 11 Added Capacitance Derating drawing Page 12 Changed tINS and tINR specs in AC Electrical Characteristics table Page 10 Updated power numbers in DC Electrical Characteristics table Page 12 Added tOFS symbol and parameter to AC Electrical Characteristics table Page 21 Updated Collision Timing waveform Page 22 Added Collision Detection Timing table and footnotes Page 26 Updated HIGHZ function in System Interface Parameters table Page 27 Added IDT Clock Solution table Page 22 & 23 Clarified Sleep Mode Text and Waveforms Page 1 & 28 Removed Preliminary status Page 6 Added another sentence to footnote 4 to recommend that boundary scan not be operated during sleep mode Page 1 Added green availability to features Page 7 Changed footnote 2 for Truth Table I from ADS, CNTEN, REPEAT = VIH to ADS, CNTEN, REPEAT = X Page 27 Added green indicator to ordering information Page 10 Corrected a typo in the DC Chars table footnotes Page 28 Removed "IDT" from orderable part number Removed the DD 144-pin TQFP (DD-144) Thin Quad Flatpack per PDN: F-08-01 Page 3 & 4 Removed the date from all of the pin configurations BC256 & BF208 Page 26 Added T&R indicator and industrial temp footnote to Ordering Information Product Discontinuation Notice - PDN# SP-17-02 Last time buy expires June 15, 2018 CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 27 for Tech Support: 408-284-2794 DualPortHelp@idt.com