TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A TIL191B, TIL192B, TIL193B OPTOCOUPLERS SOES026B - APRIL 1989 - REVISED APRIL 1998 D D D D Gallium-Arsenide-Diode Infrared Source Source Is Optically Coupled to Silicon npn Phototransistor Choice of One, Two, or Four Channels Choice of Three Current-Transfer Ratios D D D High-Voltage Electrical Isolation 3.535 kV Peak (2.5 kV rms) Plastic Dual-In-Line Packages UL Listed -- File #E65085 description These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package, and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and 100% minimum are designated with the suffix A and B respectively. schematic diagrams TIL193 TIL191 ANODE CATHODE 1 4 3 2 1ANODE 1 16 COLLECTOR EMITTER 1CATHODE 15 2 3 14 4 13 2ANODE TIL192 1ANODE 1CATHODE 1 2 3 2ANODE 2CATHODE 4 2CATHODE 8 7 6 5 1COLLECTOR 3ANODE 1EMITTER 3CATHODE 2COLLECTOR 2EMITTER 5 12 11 6 7 10 8 9 4ANODE 4CATHODE 1COLLECTOR 1EMITTER 2COLLECTOR 2EMITTER 3COLLECTOR 3EMITTER 3COLLECTOR 3EMITTER absolute maximum ratings at 25C free-air (unless otherwise noted) Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.535 kV peak or dc ( 2.5 kV rms) Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V Input diode continuous forward current at (or below) 25C free-air temperature (see Note 3) . . . . . . . 50 mA Continuous total power dissipation at (or below) 25C free-air temperature: Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 125C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements. 2. This value applies when the base-emitter diode is open circuited. 3. Derate linearly to 100C free-air temperature at the rate of 0.67 mA/C. 4. Derate linearly to 100C free-air temperature at the rate of 2 mW/C. 5. Derate linearly to 100C free-air temperature at the rate of 2.67 mW/C. Copyright 1998, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A TIL191B, TIL192B, TIL193B OPTOCOUPLERS SOES026B - APRIL 1989 - REVISED APRIL 1998 electrical characteristics 25C free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS V(BR)CEO V(BR)ECO Collector-emitter breakdown voltage IR IC(off)) Input diode static reverse current IC = 0.5 mA, IC = 100 A, Emitter-collector breakdown voltage VR = 5 V VCE = 24 V, Off-state collector current MIN IF = 0 IF = 0 Current transfer ratio VF VCE(sat) Input diode static forward voltage Cio Input-to-output capacitance UNIT V V IF = 0 10 A 100 nA 1.4 V 0.4 V 20% TIL191A, TIL192A, TIL193A IF = 5 mA, VCE = 5 V TIL191B, TIL192B, TIL193B 50% 100% IF = 20 mA IF = 5 mA, Collector-emitter saturation voltage MAX 7 TIL191, TIL192, TIL193 CTR TYP 35 IC = 1 mA f = 1 MHz, Vin-out = 0 mA, See Note 6 1 pF Vin-out = 1 mA, See Note 6 1011 NOTE 6: These parameters are measured between all input diode leads shorted together and all phototransistor leads shorted together. rio Input-to-output internal resistance switching characteristics at 25C free-air temperature PARAMETER tr tf TEST CONDITIONS Rise time VCC = 5 V, RL = 100 , Fall time MIN IC(on) = 2 mA, See Figure 1 TYP MAX 6 UNIT s 6 PARAMETER MEASUREMENT INFORMATION 47 Input (see Note A) Output (see Note B) Input 0V tr + - VCC = 5 V RL = 100 Output 90% 10% tf 90% 10% NOTE C. Adjust amplitude of input pulse for IC(on) = 2 mA VOLTAGE WAVEFORMS TEST CIRCUIT NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZOUT = 50 , tr 15 ns, duty cycle 1%, tw = 100 s. B. The output waveform is monitored on a oscilloscope with the following characteristic: tr 12 ns, Rin 1 M, Cin 20 pF. Figure 1. Switching Times 2 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A TIL191B, TIL192B, TIL193B OPTOCOUPLERS SOES026B - APRIL 1989 - REVISED APRIL 1998 TYPICAL CHARACTERISTICS TIL191, TIL192, TIL193 FORWARD CURRENT vs FORWARD VOLTAGE COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE 160 16 14 120 I C - Collector Current - mA I F - Forward Current - mA 140 IB = 0 TA = 25C 100 TA = 25C 80 TA = 70C 60 40 IF = 10 mA 12 10 IF = 8 mA 8 6 IF = 5 mA 4 TA = - 55C 20 IF = 2 mA 2 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 4 5 6 7 8 9 10 Figure 3 Figure 2 ON-STATE COLLECTOR CURRENT (RELATIVE TO VALUE AT 25C) vs FREE-AIR TEMPERATURE ON-STATE COLLECTOR CURRENT (NORMALIZED) vs INPUT DIODE FORWARD CURRENT 1.2 100 VCE = 5 V Normalized to IF = 5 mA TA = 25C VCE = 5 V IF = 5 mA IB = 0 1.1 On-State Collector Current (Relative to Value at TA = 25 C) 10 3 VCE - Collector-Emitter Voltage - V VF - Forward Voltage - V I C(on) - On-State Collector Current (Normalized) IF = 12 mA 1 0.1 0.01 1 0.9 0.8 0.7 0.6 0.5 0.001 0.1 0.4 1 4 10 40 IF - Input Diode Forward Current - mA 100 0.4 - 50 - 25 Figure 4 0 25 50 75 TA - Free-Air Temperature - C 100 Figure 5 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A TIL191B, TIL192B, TIL193B OPTOCOUPLERS SOES026B - APRIL 1989 - REVISED APRIL 1998 TYPICAL CHARACTERISTICS VC(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs FREE-AIR TEMPERATURE 0.24 IF = 5 mA IC = 1 mA 0.20 0.16 0.12 0.08 0.04 0 - 50 - 25 0 25 50 75 100 TA - Free-Air Temperature - C Figure 6 APPLICATION INFORMATION Vcc = 5 V 5V 430 7.5 k OUTPUT SN7404 SN7404 INPUT TIL191 Figure 7 4 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A TIL191B, TIL192B, TIL193B OPTOCOUPLERS SOES026B - APRIL 1989 - REVISED APRIL 1998 MECHANICAL INFORMATION 4,80 (0.189) 4,19 (0.165) TIL191 Pin 1 10,2 (0.401) 9,2 (0.362) TIL192 Pin 1 21,1 (0.831) 18,5 (0.728) TIL193 CL CL 7,62 (0.300) T.P. (see Note A) Pin 1 6,76 (0.266) 6,25 (0.246) 0,51 (0.125) MIN 3,81 (0.150) 3,30 (0.130) 5,84 (0.230) MAX 105 90 Seating Plane 1,27 (0.050) 1,12 (0.044) 3,81 (0.150) 2,54 (0.100) 2,79 (0.110) 2,29 (0.090) 0,58 (0.023) 0,43 (0.017) NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position. B. All linear dimensions are given in millimeters and parenthetically given in inches. Figure 8. Mechanical Information POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current and complete. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ("Critical Applications"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright 1998, Texas Instruments Incorporated