BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 Collector-emitter voltage (+ Vpp = 1 V) ~VcEX max. 80 50 30 V Collector-emitter voltage (open base} -VcEO max. 65 45 30 V Collector current (peak value) lom max. 200 mA Total power dissipation ~ up to Tamb = 60 OC Prot max. 250 mw Junction temperature Tj max. 150 oC DC current gain -le=2mA:-Vce=5V hfe 75 to 800 Transition frequency at f = 100 MHz Iq=10mA;-Vcp=5V fT > 10 MHz Noise figure at Rg = 2 k&2 Ie = 200 pA; -~Vcep = 5 V f = 1kHz; B = 200 Hz F < 10 dB MECHANICAL DATA Dimensions in mm Marking code: Fig. 1 SOT-23. 3.0 BC856 =3Dp 7 BC856A = 3Ap ___Wol__e BC8568 = 3Bp > | BC857 == 3Hp PS -(s[ea@lals] Ro8s7A 3eP =|0. | [a] ORES BC857B = 3Fp BC857C = 3Gp BC858 = 3Mp BC858A = 3Jp 5 BC858B = 3Kp ax BC858C = 3b) Pinning: 1 = base 2 = emitter 3 = collector 7Z96885 1 C TOP VIEW b Reverse pinning types are available on request. MBBOTR e September 1994 181BC856 BC857 BC858 RATINGS Limiting values in accordance with the Absolute Maximum System {IEC 134) pcase | eces7 | cass Collector-base voltage (open emitter) ~VcBo max. 80 | 50 30 V Collector-emitter voltage (+ Vge = 1 V) -VcEX max. 80 50 30 V Collector-emitter voltage (open base) -VcEO max. 65 45 30 V Emitter-base voltage {open collector) -VeBo max. 5 5 5 Vv Collector current (d.c.) lc max. 100 mA Collector current (peak value) ~tey max. 200 mA Emitter current (peak value) lem max. 200 mA Base current (peak value) -lpy max. 200 mA Total power dissipation * UP tO Tamp ~ 25 OC Prot max. 250 mW Storage temperature Tstg 65 to + 150 C Junction temperature Tj max. 150 oC THERMAL CHARACTERISTICS Thermal resistance From junctian to ambient Rihj-a = 500 K/W CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current lg =0;-Vog=30V; 1; 25C lego YP 1 nn Tj = 150 C lepo < uA Base-emitter voltage 650 mV Ic = 2mA;VcE= 5 VBE typ. 600 to 750 mV -I = 10 mA: Vog = 5 V Vee 820 mV a Vpe decreases by about 2 mV/K with increasing temperature. * Mounted on an FR4 printed-circuit board 8 mm x 10 mm x 0.7 mm. 182 September 1994BC856 Silicon planar epitaxial transistors BC857 BC858 Saturation voltages * = . = typ. 75 mV -le = 10 mA; Ip =0,5mA ~VcEsat - 300 my ~VBEsat typ. 700 mV = . = typ. 250 mV I= 100 mA; Ip =5mA ~VCEsat a 650 sAV ~VBEsat typ. 850 mV Knee voltage Collector capacitance at f = 1 MHz le = le=0;-Vep=10V C typ. 4,5 pF Transition frequency at f = 100 MHz le = 10mA;-VcE=5V fT > 100 MHz Small-signal current gain at f = 1 kHz lce=2mA;-Vce=5V hte 125 to 800 Noise figure at Rg = 2 kQ le = 200 vA; -Vce=5V = kHz; B= 200 Hz F ye oe D.C. current gain lIe=2mA;-VcE=5V BC856/857 BC858 hrE 125 to 800 BC856A/857A/858A hrE 125 to 250 BC856B/857B/858B hee 220 to 475 BC857C/858C hFEe 420 to 800 * VeEsat decreases by about 1,7 mV/K with increasing temperature. September 1994 183