IRF7425PbF
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 160 240 nC di/dt = -100A/μs
Source-Drain Ratings and Characteristics
A
-60
–––
–––
–––
-2.5
–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– 0.010 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 8.2 VGS = -4.5V, ID = -15A
––– ––– 13 VGS = -2.5V, ID = -13A
VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 44 ––– ––– S VDS = -10V, ID = -15A
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 87 130 ID = -15A
Qgs Gate-to-Source Charge ––– 18 27 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V
td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V
trRise Time ––– 20 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 230 ––– RG = 6.0Ω
tfFall Time ––– 160 ––– VGS = -4.5V
Ciss Input Capacitance ––– 7980 ––– VGS = 0V
Coss Output Capacitance ––– 1480 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 980 ––– ƒ = 1.0kHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Surface mounted on 1 in square Cu board, t ≤ 10sec.