IRANSYS BUV48, BUV48A ELECTRONICS NPN SILICON POWER TRANSISTORS LIMITED SOT-93 PACKAGE (TOP VIEW) @ Rugged Triple-Diffused Planar Construction e C) 2 @ 15 A Continuous Collector Current @ 1000 Volt Blocking Capability Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT . BUV48 850 Collector-emitter voltage (Vge = 0 V) BUV4BA Voces 1000 Vv . BUV48 850 Collector-emitter voltage (Rpg = 10 Q) BUV4BA VceR 1000 Vv . BUV48 400 Collector-emitter voltage (lp = 0) BUV4BA VcEo yom Vv Continuous collector current lo 15 A Peak collector current (see Note 1) lom 30 A Continuous base current lB 4 A Peak base current Iam 20 A Non repetitive accidental peak surge current losm 55 A Continuous device dissipation at (or below) 25C case temperature Prot 125 WwW Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C NOTE 1: This value applies for t, < 2 ms, duty cycle < 2%.BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT Vv Collector-emitter <= 200 mA | =25mH (see Note 2) BUV48 400 Vv CEO(SUS) sustaining voltage cm ~ BUV48A 450 Voce = 850 V VBE = 0 BUV48 0.2 | Collector-emitter Vop = 1000V -Vpp = 0 BUV48A 0.2 mA CES cut-off current Vop= 850V Vpp=0 To = 125C BUV48 2.0 Voce = 1000 Vv VBE = 0 To = 125C BUV48A 2.0 Voce = 850 V Ree = 10 Q BUV48 0.5 | Collector-emitter Veg = 1000 V Reg = 102 BUV48A 0.5 mA CER cut-off current Vop= 850V RAge=102 To =125C BUV48 4.0 Voge = 1000 V Rpg = 102 Tc = 125C BUV48A 4.0 | Emitter cut-off Vea = BV In=0 : mA FBO current EB~ a V Emitter-base | 50mMA_ Ig =0 7 30 V FBO breakdown voltage Ee ce IR= 2A Ic= 10A BUV48 1.5 Collector-emitter Ip= 3A Ic= 115A BUV48 5.0 VocE(sat) . (see Notes 3 and 4) Vv saturation voltage Ip= 16A Ic= 8A BUV48A 1.5 lRp= 24A Ic= 12A BUV48A 5.0 Base-emitter Ip= 2A Ic= 110A BUV48 1.6 VBE(sat) . (see Notes 3 and 4) Vv saturation voltage Ip= 16A Ic= 8A BUV48A 1.6 Current gain fi . Vop= 10V Ic =0.5A f= 1 MHz 10 MHz bandwidth product Cob Output capacitance Vep= 20V Ic =0 f= 1 MHz 150 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 ps, duty cycle < 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 1 C/W resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn on time 1.0 us - IG=10A Voc = 150 V BUV48 is Storage time | =2A | =-2A (see Figures 1 and 2) 3.0 HS ty Fall time Bion) Bloff) g 0.8 us ton Turn on time 1.0 us - Ic=8A Voc = 150 V BUV48A is Storage time | =1.6A | =-1.6A (see Figures 1 and 2) 3.0 HS ty Fall time Bion) ~ Blof)" g 0.8 us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 100C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT tey Voltage storage time lc =10A IByon) = 2A BUV48 4.0 us tf Current fall time VBE(ott) =-5 V (see Figures 3 and 4) 0.4 us t Voltage storage time Ic=8A I =1.6A 4.0 s = a B(on) BUV48A v tf Current fall time VBE(ott) =-5 V (see Figures 3 and 4) 0.4 usBUV48, BUV48A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V ms680 [LF | [- T >| . 100 2 Vv 1 100 .F Voc | tp I TUT mes680 LF ty = 20 us Duty cycle = 1% | V, = 15 V, Source Impedance = 50 Figure 1. Resistive-Load Switching Test Circuit 0% -C=ton - F = tote Ur uouMmo Yr m ll a dig Ta 22 A/us 'B(on) 0% lB (off) Figure 2. Resistive-Load Switching WaveformsBUV48, BUV48A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 QO +5V D45H11 RB (on) V Gen 68 QO 5X BY205-400 BY205-400 2N2904 Adjust pw to obtain | just pw to obtain I> padHtt Forlo<6A Voc =50V V Forlc26A Veo = 100 V BE(off) 100 Q Figure 3. Inductive-Load Switching Test Circuit 'B(on) ma A (90%) A-B=tey Ip Base Current B-C=ty D-E=t \/ E-F B-E 4 C 90% B 10% o VoE it Collector Voltage D (90%) e E (10%) (on) 1 Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t, < 15 ns, Rj, > 10 Q, C,, < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveform = s- Typical DC Current Gain Neg Vee(eat - COllector-Emitter Saturation Voltage - V BUV48, BUV48A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 Veg =5V Ty = 125C Ty= 25C Ty = -65C 10 1-0 0-1 1-0 10 20 |, - Collector Current - A Figure 5. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5-0 p= 5A p= 10A p= 15A T, = 100C 4-0 3-0 , | 1-0 \ 0-1 1-0 10 |, - Base Current - A Figure 7. Vee(eat - COllector-Emitter Saturation Voltage - V Vee(sat - Base-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5-0 b= 5AS p= 10A Ip=15A T, = 25C . | A 0-1 4-0 oo V4 1-0 10 |, - Base Current - A Figure 6. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1-6 15 a nts A 1-4 1:3 pio = 10 1-2 1 a 11 7 1-0 2 I,=5A _ c 0-9 0-8 0 1 2 3 4 5 6 |, - Base Current - A Figure 8.BUV48, BUV48A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 4-0 1-0 BUV48A Vog = 1000 V 0-1 logs - Collector Cut-off Current - pA 0-01 -80 -60 -40 -20 0 20 40 60 80 100 120 140 T, - Case Temperature - C Figure 9. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 10 1-0 10 us 50 ws 100 ps 500 ps ims 2ms BUV48 DC Operation BUV48A |, - Collector Current - A 0.1 p p p p p p 0-01 1-0 10 100 1000 Voge - Collector-Emitter Voltage - V Figure 10.BUV48, BUV48A NPN SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4.90 4,70 15,2 137 oy) ig 4,1 _ _ > * a0 NY 14,7 3,95 1,17 : 415 | 16,2 MAX. 12,2 MAX. O | 31,0 TYP. = ___sCOW 18,0 TYP. 1,30 0,78 a + ae 11 0,50 2,50 TYP. > k ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.