2SA1213 - Transys Electronics - Datasheet.Directory

SOT-89 Plastic-Encapsulated Transistors

2SA1213 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 0.5 W (Tamb=25℃)

Collector current

ICM : -2 A

Collector-base voltage

V(BR)CBO : -50 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=-100µA , IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO I

C= -10mA , IB=0 -50 V

E mitter-b ase break dow n volt age V(BR)EBO IE=-100µA, IC=0 -5 V

Collector cut-off current ICBO V

CB=-50 V , IE=0 -0.1

µA

E mitte r cut-off current IEBO V

EB=-5 V , I C=0 -0.1

µA

hFE 1 VCE=-2V, IC= -0.5A 70 240

DC current gain hFE 2 VCE=-2V, IC= -2A 20

Collector-emitter saturation voltage VCEsat I

C=-1A, IB= -0.05A -0.5 V

Base-emitter satu ration voltage VBEsat I

C=-1A, IB= -0.05A -1.2 V

Transition fre quency f T VCE= -2V, IC=-0.5A 100 MHz

CLA SSIFICATION OF hFE

Rank O Y

Range 70-140 120-240

Marking NO,NY

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1 2 3

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