MIL SPECS TcJfoooo1es Oooobse 5 & MIL-S-19500/91{ Sigt) Amendzent 1 1 July 1960 MILITARY SPFCIFICATION SEMICONDUCTOR DEVICE DIONE, SILICON, POWER RECTIFIER TYPE 182153 _ This Arendment forue rt of Milite ~ Specification BIL-S-19900/01(Sigc), 2 tov 59 Page 1, paregreph 1.1 table, (1 (surge)) columns Delete "50" pertaining to Absolute Mexinum velue ond substitute "---"3 delete ---" pertaining to Minimus value and substitute "50". Pege 2, peregroph 3.6: In line 2, delete I, II, end III" ond substitute J end II*. Poge 2, petetreph 4.3: In line 2, delete "I, II, end III" and substitute I end In". Page 3, Table I, Subgroup 2, Surge current: Delete, including 611 columner data associated with this test. Page &, Subgroup 2, End Points, Forverd voltege: In Min colusn, insert n-="; in Max column, insert "1.5"; in Unit colusn, insert vdc"s Page 5, Subgroup 4, End points, Forward voltage: In Max column, delete 15" end substitute "1.5"; in Unit column, delete wide end substitute vde". Page 5, Subgroup 5: As the first listed test in the subgroup, effect the following insertions: in Ref Par column, insert "60.1.15"3 in Test column, insert "Surge current"; in Conditions column, insert * F, 5Adc" end Vec = 820" end "f = 60 cps"; in Sym column, insert "4" surge)"; in Min column, insert "50"; in Max column, insert Fons 4n Unit column, insert "Adc". Pege 6, Tedle III: Delete the nunber and title of the teble and substitute Table Il. Group B insyection-(Continued). Pege 8, Note 7(c): In lest line, delete "III" ond substitute "II". Pege 8, Note 8: In first line, delete on teble ITI" end substitute in teble II". Sheet 1 of 1 shect Fsc 5960 THIS DOCUMENT CONTAINS _| _ PAGES.MIL SPECS Tc#f 0000125 oo00b545 ? a MIL*8-19500/ 91 (84gC) 2 November 1959 MILITARY. SPECIFICATION SEMICONDUCTOR DEVICE DIODE, SILICON, POWER RECTIFIER TYPE + 12153 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a silicon power rectifier with the following cherocteristics: vr ~~ Vae if ~ tF Ui Ceurge)) Tf atg ww kStings Vde rps A Ade 1-120 sec c Absolute 600 k20 6 5 50 + 150 Ma x oun Note 1 Note. Hote 2 oe. =r see Ninisus one seo one ase een 265 2. APPLICABLE DOCUMENTS 2.1 The following specifications, standards, and pubdlicetions, of the issue in effect on dete of invitation for bids, forme pert of this specification: SPECIFICATION MILITARY MIL-8-19500 Semiconductor Devices, General Specification for. (Copies of .pecifications ere required by contractors in connection with specific procuresent functions should be obteined from the procuring activity or es directed by the contrecting officer.) ' . 3- REQUIREMENTS " 3-1 Requireaents.- Requirements ehell be in accordance with Specificetion MIL-8-19500, end as spec ein. Sheet 1 of 11 sheets THIS DOCUMENT CONTAINS _\\_ pages eaeMIL SPECS Icy Ooo012e5 OOo0b54 4 iE MIL-8~1.950041 (8igC) 3.2 Qualification.- Qualification shell be as specified in 4.3. 3-3 Definitions, Definitions shali be as defined in MIL-5-19500. 3.4 Abbreviation and symbo]s.= Abbreviations and symbole shall be in sccordance witb MIL-8-19500 and as specified berein: ' hresseca season vesennee pour Mle vceeeesanconassaeens eillimeter 3-5 Design and consatruction.= Dictes sball be of the design, construction, and physical dimensions specified on figure l. 3-5el Operating position. Dicdes shall operate in any position. 3-5-2 Maximum operating altitudg.= Diodes shall operat. at a maximun-altitude equivalent to 15 mm of mercury, 3.6 Performnce characteristics.= Performance characteristics shall be as specifid in tables I, II, amd Ill. 3.7 Marking.e Diodes conforming to all the requirements of this specification and passing Governzent inspection shall be marked "U. 8. Army, qualification approval code letters, and the number IN2153. If a waiver has been granted, only the camercial brand sball be used. 4. QUALITY ASSURANCE PROVISIONS 4.1 Contractor responsibility. Unless otherwise specified herein, the supplier ds responsible for the performance of all inspection requirements prior to submission for Government inspection and acceptance. Except as otherwise specified, the supplier way utilise bis own facilities or any comercial laboratory acceptable to the Covernuent. Inspection records of the examinations and tests shall be kept complete and available to the Governzent as specified in the sontract or order. 4,2 Inspection conditions and mthods of test.- Inspection conditions and methods of test shall be in accordance with Specification MIL-S-19500 appendix C, and as specified berein. 4.3 Qualification insmaction-ee Qualification inspection shall consist of the examinations and tests specified in tables I, II, and III. The nuaber ef specimens: to be inspected in each group, the determination of defectives, and the number of defectives will be es specified in the qualificationeinspection routine in Epecification MIL~S-19500. In table il the tests specified as end points will be performed after each testMIL SPECS tcf oo001e5 ooo00bs5 o i MIL-8-19500)01 (SigC) k.& Group A inspection.- Group A inspection shell consist of the examinations\end tests specifies in table i. fTeble I Group A Inspection (slso Group I Qualificetion Ret Fxamine tion AQL per or test Conditions (percent Inspection Symbol Limits Unit defective) level Kin Max Subgroup L 30.13 Visual and 1.0 rt oo en om oe mechanical examination Subgroup 2 edeLed Forward voltage if = 6 Ago Vy m2 165 Vag Hote 6 Kote 17 60.1.10 Reverse current Vide 600 Tp ee 50 nde Note 5 30.6 High. tewperature ) Operating Test: ' ; 60.1.10 Reverse Current on 43C Ave T-case-150C oC 2.5 TT IR o= 750 wAde Vac = 420 f= cps Zp = 5A . Note 9 60.14 - Yorward Voltege T-csse = 150 Vy =e 2 Yae Tp * 5 Ade Kote 6 60.1.7 Pesk Reverse Ip = 1.0 made) Vr 600 = vVde voltage Teap. = 25 + 3C Note 5 60.1615 Surge current Ip = 5 Ado af ~-- 50 A ac = h20 (surge) f = 00 cpsMIL SPECS cf cooo12s oooonse 2 i MIL-S-19500/ 91 (SigC) 4.5 Group B inspection.- Group B inspection shell consist of the tests specified in teble II, e order shown in cach subgroup. Readings in eddition to the end points specified in teble II may be taken st the discretion of the menufectnurer. Tebdle II. Group B inspection AQL Inspection Ref Examination (percent Level Lisits Par or test Conditions defective) Code Sya Kin Mex Up Subgroup 1 (elso group IT ua lification 30.9 Physics] dimensions 4.0 Le7 - Reduced L5 Procedure Ri Subsroup 2 (slso IIt ua lification 40.13 Soldering 40.6 Moisture-resistance Hotes 3, 10 ih 10 cy 40.14 Touperature cycling Notes 3, 11 Reduced 12 5 cy 40.16 Thermal shock Notes 3, 18 40 5 * End Points 60.1.4 Forward voltege if = 6 Age Vy Kote 6 Note 17 60.1.10 Reverse current Vac = 690 In == 75 wA Note 5 Subgrou e180 group IV us Lification 40.10 Shock Notes 3, 12 40.18 Vibretion fatigue Notes 3, 14 howd Centrifuge Hotes 3, 15 ) 4.0 pa eo 5000 2 Gg! End Points . Reduced L2 Procedure R1 60.2.4: Forverd voltege if = 6 Age Vp co 165 Vy Note 6 Rote 17 60.12.20 Reverse current Vac = 600 th 7 75 WA Hote 5 , .MIL SPECS tcf oooo12s oooons? 4 & MIL-8-19500/ 91 (8igC) Teble II. Group B inspection AQL Taspection Ref Exewinetion : (percent Level Limits Par or test Conditions defective) Code Sym Min Max Unit Subgroup 4 (also group V Que lif cation Insulation resistence Vac # 600 10x105 Meg Kote 2 Terminal tension Rote 1 Reduced L2 Procedure Rl 60.1.4 Forvwerd voltage if = 6 Age . Vper TS wade Rote 6 Note 17 - 60.110 Reverse current Vag = 690 In -- 4675 = wade Note 5 30.7 . Low teuperature T a 65 23C uw operation: Reduced L2 rr) Procedure Ri $001.7 Peak reverse voltege Ip 1-0 mado Vr 600 <= VagMIL SPECS tcf ooo0125 oooonse & MIL-8~19500/9) (sige) 4.6 Group inspection.--Group C inspection ahsll consist of the tests specified in Table III, in the order shown for eech subgroup. In eddition to the Specified end points, the menufecturer et his discretivn mey take other reedings. Table III. Group C inspection AQL Inspection (percent gefective) level code life test hours hour neers Ref Examination ; life test life iife test Lisit: per or test Condition 270 SOT L000 FO B50 test 560 280 Sya Min i brs. are. brs hrs brs hours hours Subgroup I (also . oe VI Qualifice ation hO.Telel Operstion life +150 + 3C : t = 1690 hrs f = 60 cps Vac = hoo End points; Ty 5 Aag ) Forward voltege if = 6 Ago 6.56.5 6.5 25 1.0 Jr6 16 16 Vy 1. Note 6 Note 17 Reverse current Vg, = 600 qg vs Note 5 Subgroup II (also oup VIT Qua Ceo ation . 6.5 6.5 6.5 2.5 1.0, , . | . 40.7.1.1 Storage life Tetg = 150 + 3C t = 1000 hours End points: Forward voltege if = 6A v 1. Note 6 . rrr ? Note 17 Reverse current V,, = 600 15 ite 5. *Hote 1. Rote 2. Hote 36 Rote &, Hote 5. Kote 6. Note 7. MIL SPECS rcMoooo1as oooonss 3 MIL-8-19500f1 (8igc) Terminal tension test. This test is to determine that the ceramic insulating disc is properly secured tc the stud and soldering lug. The device shall. be securely fastened by screwing the stud into a suitable support so that the terminal (cathode) extends downward in ea vertical position. With a hanivise, or equivalent, the specified weight of 10 pounds avoirdupois (including the attaching device) sball be suspended from the terminal for a period of 20 seconds minimum. Insulation resistance. The electrical insulation shall be measured by using @ megoneter, tbe diode rectifier sball be mounted on an aluminua heat sink 6" x 6" x 1/%" and applying ths specified voltage between the cathode and the teat sink, At the conclusion of this test the unit shall be tested in accordance with the comitions specified for each subgroup and ;oint requirement. The peak reverse voltage shall be measured using the circuit in figure 1 or an equivalent circuit, | w | (a) (2) Vde Ry CAAA, With the specified dc voltage applied to the electrodes, the reverse current of the semiconductor device shall be measured. This test may be made utilising Volt-ameter methods or by oscilloscope presentation with a sweep frequency of 10,000 cps or less. With the specified current flowing through the crystal diode, the voltage drop across its terminals shall be measured. This test may be made utilizing volt-ammeter methods or by oscilloscope presentation with a swoep frequency of 10,000 cps or less. The crystal diode rectifier shall be subjected to continuous operation life test in accordance withthe following procedure: (a) Insert the crystal in a balf wave rectifier circuit. (>) The applied signal auplitude, frequency and wave shape, the value of the load resistor and the duration ef the test shall be specified on the specification.MIL SPECS Cf Oooo1es OOOObLO 4 i MIL-8-19500/)1 (SigCc) Rote 6, Kote 9. (c) Specified measurements to determine compliance with the specified life test end points shall be mde at the end of the first twenty-four hours and at intervals thereafter as specified until the compietion of the life test. The duration of the life test shall be as specified in table III. The criteria for life test end point stall be as specified on table TIT. A semiconductor device shall bave reached the end of its life when if fails the specified life test end point limit(s) when measured under the specified test conditions. When two or more tests are specified for life test end points, fatlure of any one of these tests shall constitute failure of the semiconductor device. . High temperature operating test. With the specified voltages applied, the seule conductor device shall be operuted st 150C temperature. After thermal equillie brium bas been reached at the specified high tezyerature, performance measurements shall be made, using the tess circuit shown on figure 2. ww) {r= 60 CYCLE VARIABLE VOLTAGE SOURCE DI -D2 CRYSTAL RECTIFIERS High temperature operating test circuit The reverse leakage current of each crystal rectifier, D, & Do must be less than 1/20 of the maximum allowable specifivd leakage of the rectifier under test. In other respects, crystal rectifiers Dj) & D, should be the same, type as the rectifier under test. Note 10. fhe semiconductor device shall be tested in accordance with Method 106 per Standard MIL-STD-202, a Mote ll. The semiconductor device shall be subsected to the nunter of temperature cycles as specified. Low temperature shall be -65C or lower; high temperature stall be 150C or higher. The device shell we maintained -t each end temperac ture for sufficient time to reach thermal equillitrium, but for not less than 15 minutes. The time for changing the temperature. from end point te end point shall not exceed $0 minutes.Kote 12. Kote 13. Kote lh. Kote 15. Note 16. Hote 17. Note 16. 5e 5.1 fication magnetic MIL SPECS TC 0000125 ooooLL1 bt & MIL-8 -19500/o) (Sie) The diode unit shall be tested in accordance with Mehtod 202, Drawing 254JAN. The diode unit shall be subjected to three 500 G shocks of approximately 1 millisecond duration in each ef two directions, one direction along tho axis, and the othar perpendicular to the axis. The semiconductor device elall be fastened rigidly on the vibration platform. The device shall be vibrated successively in two directions (one along the axis and the other perpendicular to the axis of tbs diode unit) over a frequency range of 100 to 1000 cycles per sacond, covering the vibration frequency range four times in no less than 16 minutes, witb uniform variation of frequency and constant and constant peak acceleration of 100. Ths semiconductor device shall be fastened rigidly on the vibration platform and shall be vibrated with simple harmonic motion at any singly frequency between 45 and 100 cps, with a conatant peak acceleration of 100. The diode sball be vibrated for a total of 64 hours, 22 bours in each of the two directions, one along the axis and th: other perpendicular to the axis of the diode. The diode units shall be cubjected to a centrifugal acceleration of 5000 G's in each of two directions (one along the axis and the other perpendicular to the axis of the diode unit). The centrifuge esball be held at the maximum Speed until a stable reading of the tachometer is cbtained. Mensurements made with the unit mounted on a 6" x 6" x 1/4" beat sink. Absolute maxinun ratings. See definition of absolute maximum retings given in paragraph 20.1 cf MIL-8-19500. Absolute maximum ratings (excluding storage temperature) are for T case at 150C. The diode shall be immersed in a liquid at 100C t 5C for a minimum of 5 minutes The diode shall then be transferred to a liquid of 0 5C, transfer tims shall be less than 10 seconds. The diode shall remain at OC for 5 minutes then similiarly transferred to the liquid at 100C. This constitutes one complete the-mal shock cycle. At the end of the number of theraal sheck cycles specified there shall be no evidence of mechanical damage to the diode. PREPARATION FOR DELIVERY Semiconductor Cevices shall be prepared for delivery in accoriance with Specie WIL-8=19500. In addition, semiconductor devices which may damaged by electroe radiation shall be individually and completely enclosed in a nommgnetic electricad, conducting covering for electrical shielding. 6. 602 KOTES Ordering data.= Procurement documents should specify the following: (a) Title, number, and date of this specification. (b) Title, number, ani date of the applicable detail specifications, and the complete type designation. (e) Level of preservation, and packaging, api packing end applicable marking.MIL SPECS 1c oooo1es oooonLe 8 MIL-8-1950042 (Sige) 6.2 Qualification.- With respect to products requiring qualification, awards will be made or such products as have, prior to the tine set for opening of bide beon tested and approved for inclusion in the apriicable Qualified Products List QPL-19500 Aruy woether or not such products have actually been so listed by that date. 6.2.1 The attention of the suppliers is called to this requirement, and manufacturers eve urged to arrange to bave the products that they propose to offer to the U. 8. Aray to be tested for qualification, in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Application for qualification approval should be addressed to Components ani Materials Branch, Stanlardization Division, U. 8. Arnuy Signal Equipment Support Agency, Fort Monmouth, Hew Jorsey. NOTICE= When Goverment drawings, specifications, or other data are used for any wy purpose other than in connection with a definitely related Goverment procurement operne tion, the United States Governmnt thereby incurs no reuponsibility nor any obligution whatsoever; and the fact that the Government may have formulated, furnished, or in any supplied the said drawings, specification, or other data ie not to be regarded by implicae tion or otherwise as in any aanner licensing the bolder or any other person or corporation, or conveying any rights or peraission to manufacture, use, or sell any patented invention that may in any way be related thereto. 2372TQ cooo12s gocone3s T MIL SPECS MIL=8~19500/)1 (Sig) ESI2Ni - YAIdIL9O3YN YAMOd NODS Si 14 SSOUD OGS LD A vid 0l0 200F ee ste - 9L via 060 xvw 42 L wwf St J 290 | & | xv ! } nT . = Sq {I 1 t 2 ym \ vaanze-or Y | KS " x 4 4 ale wf i+ if oF n 3S 1ONY G2yu1S30 OL GNIS 6o