Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB560 Single Anode General Description: 60 V 5 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 5 Amperes,Ta=25C Maximum Instantaneous Reverse Voltage VR= 60 Volt, Ta=25C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM Spec. Limit 60 IFAV 5 VF MAX 0.65 0.64 Volt IR MAX 0.3 0.25 mA Cj MAX IFSM Tj TSTG Die Sort UNIT 63 Volt Amp pF 120 -65 to +125 -65 to +125 Amp C C Specification apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING A C B Top-side Metal D SiO2 Passivation P+ Guard Ring Back-side Metal ITEM um2 Mil2 Die Size 1838 72.36 Top Metal Pad Size 1738 68.4 Passivation Seal 1758 69.2 Thickness (Min) 254 10 Thickness (Max) 305 12 (1)Cutting street width is around 80um(3.14mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag. DIM A B C D