2N5087TFR - Fairchild Semiconductor

2N5086/2N5087/MMBT5087

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage -50 V

VCBO Collector-Base Voltage -50 V

VEBO Emitter-Base Voltage -3.0 V

ICCollector current - Continuous -100 mA

TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C

Symbol Parameter Test Conditio n Min. Max. Units

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V

V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V

ICEO Collector Cutoff Current VCB = -10V, IE = 0

VCB = -35V, IE = 0 -10

-50 nA

nA

ICBO Emitter Cutoff Current VEB = -3.0V, IC = 0 -50 nA

On Characteristics

hFE DC Current Gain IC = -100µA, VCE = -5.0V

IC = -1.0mA, VCE = -5.0V

IC = -10mA, VCE = -5.0V

5086

5087

5086

5087

5086

5087

150

250

150

250

150

250

500

800

VCE(sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA -0.3 V

VBE(on) Base-Emitter On Voltage IC = -1.0mA, VCE = -5.0V -0.85 V

Small Signal Characteristics

fTCurrent Gain Bandwidth Product IC = -500µA, VCE = -5.0V, f = 20MHz 40 MHz

Ccb Collector-Base Capacitance VCB = -5.0V, IE = 0, f = 100KHz 4.0 pF

hfe Small-Signal Current Gain IC = -1.0mA, VCE = -5.0V,

f = 1.0KHz 5086

5087 150

250 600

900

NF Noise Figure IC = -100µA, VCE = -5.0V

RS = 3.0kΩ, f = 1.0KHz

IC = -20µA, VCE = -5.0V

RS = 10kΩ

f = 10Hz to 15.7K H z

5086

5087

5086

5087

3.0

2.0

3.0

2.0

dB

2N5086/2N5087/MMBT5087

PNP General Purpose Amplifier

• This device is designed for low level, high gain, low

noise general purpose amplifier applications at

collector currents to 50mA.

SOT-23

1. Base 2. Emitter 3. Collector

1

2

3

Mark: 2Q

TO-92

1

1. Emitter 2. Base 3. Collector

2N5086/2N5087/MMBT5087

Thermal Charac teris tics Ta=25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."

Symbol Parameter Max. Units

2N5086

2N5087 *MMBT5087

PDTotal Device Dissipation

Derate above 25°C625

5.0 350

2.8 mW

mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

2N5086/2N5087/MMBT5087

Typical Characteristics

Figure 1. Typical Pulsed Current Gain

vs Collector Current Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current

Figure 3. Base-Emitter Saturation Vo ltage

vs Collector Current Figure 4. Base-Emitter On Voltage

vs Collector Current

Figure 5. Collector Cutoff Current

vs Ambient Temperature Figure 6. Input and Output Capacitance

vs Reverse Voltag

0.01 0.03 0.1 0.3 1 3 10 30 100

50

100

150

200

250

300

350

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CUR RENT GAIN

C

FE

125 °C

25 ° C

- 40 °C

V = 5V

CB

β

0.1 1 10

0

0.05

0.1

0.15

0.2

0.25

0.3

I - COLLE CTOR CU RREN T (mA)

V - CO LL ECT O R EMITTER VOLTAG E ( V)

C

CESAT

β= 10

25

°

C

- 4 0

°

C

125

°

C

β

0.1 1 10 50

0

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER VO LTAG E ( V)

C

BESAT

25 °C

- 4 0 °C

125 °C

β= 10

β

0.1 1 10 25

0

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRE NT (mA)

V - BASE EMITTER ON VOLTAGE (V)

C

BEON

V = 5V

CE

25 °C

- 40 °C

125 °C

β

25 50 75 100 125

0.01

0.1

1

10

100

T - AM BIE NT TEMP E RATURE ( C)

I - COLLE CTOR CU RR EN T (nA)

A

CBO

°

V = 4 0V

CB

048121620

0

4

8

12

16

20

REV E RS E B IAS VOLTAGE (V )

CAPAC ITAN CE (p F )

f = 1 MHz

Cobo

C ibo

β

2N5086/2N5087/MMBT5087

Typical Characteristics(Continuce)

Figure 7 . Ga in Bandwidt h Product

vs Collector Current Figure 8 . N ois e Figure vs Frequency

Figure 9 . Wideband Noise Freque nc y

vs Source Resistance Figure 10. Power Dissipation vs

Ambient Temperature

Figure 11. Equivalent Input Noise Current

vs Collector Current Figure 12. Equivalent Input Noise Voltage

vs Collector Current

0.1 1 10 100

0

50

100

150

200

250

300

350

I - COLLECTOR CURRENT (mA)

f - GAIN BANDWIDTH PRODUCT (MHz)

V = 5V

CE

C

T

µΩ

µ

Ω

√

µ

100 1000 10000 1000000

0

1

2

3

4

5

f - F RE QUENCY (Hz )

N F - NO IS E FI G U RE (d B)

V = 5V

CE

I = - 250 µA, R = 5. 0 kΩ

C S

I = - 500 µA, R = 1.0 kΩ

CS

I = - 20 µA, R = 10 kΩ

CS

µ

Ω

√

µ

µΩ

1,000 2,000 5,000 10,000 20,000 50,000 100,000

0

2

4

6

8

R - SOURCE RE SISTA NCE ( )

N F - NOISE FIGURE (dB)

V = 5V

BAN DWIDTH = 15.7 k Hz

CE

I = 10 µA

C

I = 10 0 µA

C

SΩ

√

µ

µΩ

µ

Ω

√

µ

0 25 50 75 100 125 150

0

125

250

375

500

625

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

D

o

TO-92

SOT-23

µΩ

µ

Ω

0.001 0.01 0.1 1

0.1

0.2

0.5

1

2

5

10

I - COL LECTOR CU RRENT ( mA )

i - E QUIVAL ENT INPUT NOISE CURRENT (pA/ Hz)

V = - 5. 0V

CE

i , f = 100 Hz

n

C

n2

√

i , f = 1.0 kHz

n

i , f = 10 kHz

n

√

µ

µΩ

µ

Ω

√

0.001 0.01 0.1 1

0.001

0.002

0.005

0.01

0.02

0.05

0.1

I - C OL LEC TOR CUR R ENT ( m A)

e - EQUIV ALE NT INPUT NOISE VOLTAGE ( V/ Hz)

V = - 5.0V

CE

C

e , f = 100 Hz

n

e , f = 1.0 kHz

ne , f = 1 0 kHz

n

n2

√√

µ

2N5086/2N5087/MMBT5087

Typical Characteristics (Continuce)

Figure 1 3 . C onto u r s of C o ns tanc t

Narrow Band Noise Figure Figu r e 1 4 . C o ntou r s of C onst a nc t

Narrow Band Noise Figure

Figur e 15 . B C ontours of Cons tant

Narrow Band Noise Figure Figure 1 6 . C ontours of Cons tant

Narrow Band Noisd Figure

0.001 0.01 0.1 1

100

1,000

10,000

100,000

1,000,000

I - COLLECTOR CURRENT (mA)

R - S OU RCE RESISTANC E ( )

BAND W IDTH = 1. 5 kHz

10 dB

C

Ω

S

6.0 dB

4.0 dB

10 dB

6.0 dB

4.0 dB

2.0 dB

V = - 5V

f = 10 kH z

CE

1.0 dB

Ω

0.001 0.01 0.1 1

100

1,000

10,000

100,000

1,000,000

I - CO L L ECTOR CURRENT ( mA)

R - SO U RCE R ESISTANC E ( )

12 dB

C

Ω

S

8.0 dB

5.0 dB

3.0 dB

V = - 5V

f = 100 Hz

BA NDWIDTH = 15 Hz

CE

12 dB

8.0 dB

5.0 dB

Ω

0.001 0.01 0.1 1

100

1,000

10,000

100,000

1,000,000

I - CO LL E CT O R CURRE NT (mA )

R - SOURC E RESISTANCE ( )

10 dB

C

Ω

S

6.0 d B

4.0 d B

V = - 5V

f = 1.0 kHz

BANDWIDTH = 150 Hz

CE

10 dB

6.0 d B

4.0 d B

Ω

0.01 0.1 1 10

100

200

500

1,000

2,000

5,000

10,000

I - CO LLECT OR CU RRENT (mA )

R - SOURCE R ESIS TANC E ( )

C

Ω

S

6.0 dB

4.0 dB

V = - 5V

f = 10 MHz

BANDWIDTH

= - 2 kHz

CE

6.0 dB

4.0 dB

2.0 dB

2N5086/2N5087/MMBT5087

Typical Common Emi tter Characteristics (f = 1.0KHz)

Typical Common Emitter Characteristics Typical Common Emitter Characteristics

Typical Common Emitter Characteristics

-25-20-15-10-50

0.4

0.6

0.8

1

1.2

1.4

1.6

V - COLLECTOR-EMITTE R VOLTAGE (V)

HA RACT ERI STI CS REL . TO VALUE, V =-5.0V

CE

T = -2 5 C

A

I = 1.0 mA

C

CE

hoe

h and h

fe ie

f = 1.0 kHz

°

0.1 0.2 0.5 1 2 5 10

0.01

0.1

1

10

100

I - C OLLECTOR CU R RENT (mA)

HARACTERISTICS REL. TO VALUE , I =1.0mA

C

T = -25 C

A

V = -5 .0V

CE

C

hie

f = 1.0 kHz

°

hfe

hoe

-60 -40 -20 0 20 40 60 80 100

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

T - A MB IENT TEMPERATURE ( C)

CHAR ACTERISTICS REL. TO VALUE, T = 25 C

A

V = -5.0V

CE

A

h

oe

f = 1.0 kHz

h

fe

h

ie

°

I = 1 .0 m A

C

h and h

fe oe

h

ie

Package Dimensions

2N5086/2N5087/MMBT5087

Dimensions in Millimeters

0.46 ±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 ±0.20]1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

1.02 ±0.10

(0.25) 4.58 ±0.20

4.58 +0.25

–0.15

0.38 +0.10

–0.05

0.38 +0.10

–0.05

TO-92

2N5086/2N5087/MMBT5087

Package Dimensions (Continued)

0.96~1.14

0.12

0.03~0.10

0.38 REF

0.40 ±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

0.97REF 1.30 ±0.10 0.45~0.60

2.40 ±0.10

+0.05

–0.023

0.20 MIN

0.40 ±0.03

SOT-23

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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