SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=160V, VCEO=140V H Low Leakage Current. 3 G A 2 D High Collector Breakdwon Voltage 1 : ICBO=100nA(Max.) VCB=100V Low Saturation Voltage P J 1. EMITTER MAXIMUM RATING (Ta=25) CHARACTERISTIC 2. BASE SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Base Current IB 100 mA PC * 350 mW Tj 150 Tstg -55150 Collector Power Dissipation Junction Temperature Storage Temperature Range 3. COLLECTOR SOT-23 Marking Note : * Package Mounted On 99.5% Alumina 1080.6) Type Name 1999. 11. 30 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C Low Noise : NF=10dB (Max.) P N : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA DIM A B C D E G H J K L M N P Revision No : 2 Lot No. ZP 1/2 2N5550S ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Base Breakdown Voltage Collector-Emitter * Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter * * Saturation Voltage Base-Emitter Saturation Voltage * TEST CONDITION MIN. TYP. MAX. UNIT VCB=100V, IE=0 - - 100 nA VCB=100V, IE=0, Ta=100 - - 100 A VEB=4V, IC=0 - - 50 nA V(BR)CBO IC=0.1mA, IE=0 160 - - V V(BR)CEO IC=1mA, IB=0 140 - - V V(BR)EBO IE=10A, IC=0 6 - - V hFE(1) VCE=5V, IC=1mA 60 - - hFE(2) VCE=5V, IC=10mA 60 - 250 hFE(3) VCE=5V, IC=50mA 20 - - VCE(sat)1 IC=10mA, IB=1mA - - 0.15 VCE(sat)2 IC=50mA, IB=5mA - - 0.25 VBE(sat)1 IC=10mA, IB=1mA - - 1.0 VBE(sat)2 IC=50mA, IB=5mA - - 1.2 100 - 300 MHz fT Transition Frequency VCE=10V, IC=10mA, f=100MHz V V Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 30 pF Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200 Noise Figure NF - - 10 VCE=5V, IC=250A Rg=1k, f=10Hz15.7kHz dB * Pulse Test : Pulse Width300 S, Duty Cycle2%. 1999. 11. 30 Revision No : 2 2/2