*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
TISP1072F3,TISP1082F3
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
D Package (Top View)
P Package (Top View)
SL Package (Top View)
Device Symbol
Description
These dual forward-conducting unidirectional over-voltage
protectors are designed for the overvoltage protection of ICs
used for the SLIC (Subscriber Line Interface Circuit) func-
tion. The IC line driver section is typically powered with 0 V
and a negative supply. The TISP1xxxF3 limits voltages that
exceed these supply rails and is offered in two voltage vari-
ants to match typical negative supply voltage values.
High voltages can occur on the line as a result of exposure
to lightning strikes and a.c. power surges. Negative tran-
sients are initially limited by breakdown clamping until the
voltage rises to the breakover level, which causes the
device to crowbar. The high crowbar holding current pre-
vents d.c. latchup as the current subsides. Positive tran-
sients are limited by diode forward conduction. These pro-
tectors are guaranteed to suppress and withstand the listed
international lightning surges on any terminal pair.
How To Order
.......................................UL Recognized Component
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current <10 µA
Rated for International Surge Wave Shapes
1
2
3
45
6
7
8G
G
G
G
NC
T
R
NC
NC - No internal connection
R
G
T
G
T
G
G
R
1
2
3
45
6
7
8
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MD1XAB
1
2
3
T
G
R
G
TR
SD1XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
DEVICE VDRM
V
V(BO)
V
‘1072F3 - 58 - 72
‘1082F3 - 66 - 82
Waveshape Standard ITSP
A
2/10 µs GR-1089-CORE 80
8/20 µs IEC 61000-4-5 70
10/160 µs FCC Part 68 60
10/700 µsITU-T K.20/21
FCC Part 68 50
10/560 µs FCC Part 68 45
10/1000 µs GR-1089-CORE 35
Device Package Carrier
TISP1xxxF3
D, Small-outline Tape And Reeled TISP1xxxF3DR
P, Plastic Dip Tube TISP1xxxF3P
SL, Single-in-line Tube TISP1xxxF3SL
TISP1xxxF3DR-S
TISP1xxxF3P-S
TISP1xxxF3SL-S
Insert xxx value corresponding to protection voltages of 072 and 082
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
*RoHS COMPLIANT
VERSIONS
AVAILABLE
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for R and T Terminal Pair, TA = 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage, 0 °C < T
A
< 70 °C‘1072F3
‘1082F3 V
DRM
-58
-66 V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape) 120
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 80
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω
resistor) 50
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70
10/160 (FCC Part 68, 10/160 voltage wave shape) 60
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 55
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50
5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50
10/560 (FCC Part 68, 10/560 voltage wave shape) 45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 35
Non-repetitive peak on-state current, 0 °C < T
A
< 70 °C(see Notes 1 and 3)
50 Hz, 1 s D Package
P Package
SL Package
I
TSM
4.3
5.7
7.1
A
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A di
T
/dt 250 A/µs
Junction temperature T
J
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP
®
must be in thermal equilibrium with 0 °C<T
J
<70 °C. The surge may be repeated after the TISP
®
returns to its
initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Parameter Test Conditions Min Typ Max Unit
IDRM
Repetitive peak off-
state current VD=±VDRM, 0 °C<T
A<70°C±10 µA
IDOff-state current VD=±50 V ±10 µA
Coff Off-state capacitance
f=100 kHz, Vd=100 mV
VD=0
(see Note 4)
D Package
P Package
SL Package
0.08
0.06
0.02
0.5
0.4
0.3
pF
NOTE 4: Further details on capacitance are given in the Applications Information section.
Description (continued)
TISP1xxxF3 Overvoltage Protector Series
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to
suppress and withstand the listed international lightning surges on any terminal pair.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are
virtually transparent to the system in normal operation.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for T and G or R and G Terminals, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current V
D
=V
DRM
, 0 °C<T
A
<70°C-10µA
V
(BO)
Breakover voltage dv/dt = -250 V/ms, R
SOURCE
=300
Ω
‘1072F3
‘1082F3
-72
-82 V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
-1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
R
SOURCE
=50
Ω
‘1072F3
‘1082F3
-78
-92 V
I
(BO)
Breakover current dv/dt = -250 V/ms, R
SOURCE
=300
Ω
-0.1 -0.6 A
V
FRM
Peak forward recovery
voltage
dv/dt
≤
+1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
R
SOURCE
=50
Ω
‘1072F3
‘1082F3
3.3
3.3 V
V
T
On-state voltage I
T
=-5A, t
W
=100 µs-3V
V
F
On-state voltage I
T
=+5A, t
W
=100 µs+3V
I
H
Holding current I
T
=-5A, di/dt=+30mA/ms -0.15 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85V
DRM
-5 kV/µs
I
D
Off-state current V
D
=-50V -10 µA
C
off
Off-state capacitance
f=1MHz, V
d
=0.1V r.m.s., V
D
=0
f=1MHz, V
d
=0.1V r.m.s., V
D
=-5V
f=1MHz, V
d
=0.1V r.m.s., V
D
=-50V
(see Note 4)
‘1072F3
‘1082F3
‘1072F3
‘1082F3
‘1072F3
‘1082F3
150
130
65
55
30
25
240
240
104
104
48
48
pF
NOTE 5: Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
TISP1xxxF3 Overvoltage Protector Series
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance Ptot =0.8W, T
A=25 °C
5cm
2, FR4 PCB
D Package 160
°C/WP Package 100
SL Package 135
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP1xxxF3 Overvoltage Protector Series
Figure 1. Voltage-current Characteristic for Terminals R and G or T and G
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Qua drant I
Forward
Conduction
Characteristic
+v
+i
I
F
V
F
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAC
Figure 2. Voltage-current Characteristic for Terminals R and T
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Qua drant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G or T and G Terminals
Figure 3. Figure 4.
Figure 5. Figure 6.
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
0·001
0·01
0·1
1
10
100
TC1LAF
V
D
= -50 V
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Negative Breakdown Voltages - V
60.0
70.0
80.0
TC1LAL
V
(BO)
V
(BR)
V
(BR)
V
(BO)
V
(BR)M
V
(BR)M
I
(BR)
= 1 mA
'1072F3
'1082F3
V
T
- On-State Volt ag e - V
23456789
10
1
10
100
TC1LAC
-40 °C
150 °C
25 °C
V
F
- Forward Voltage - V
23456789110
I
F
- Forward Current - A
1
10
100
TC1LAE
-4 0 °C
150 °C
25 °C
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
OFF-STATE CURRENT
vs
ON-STATE VOLTAGE
FORWARD CURRENT
vs
FORWARD VOLTAGE
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
1
TISP1xxxF3 Overvoltage Protector Series
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Figure 7. Figure 8.
Figure 9. Figure 10.
T
J - Junction Temperature - °C
-25 0 25 50 75 100 125 150
IH, I(BO) - Holding Current, Breakover Current - A
0·07
0·08
0·09
0·1
0·2
0·3
0·4
0·5
0·6
0·7
0·8
0·9
1·0 TC1LAD
I(BO)
IH
di/dt - Rate of Rise of Principle Current - A/µs
0·001 0·01 0·1 1 10 100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0 TC1LAG
di/dt - Rate of Rise of Principle Current - A/µs
0·001 0·01 0·1 1 10 100
VFRM - Peak Forward Recov ery Voltage - V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 TC1LAH
R or T Terminal Voltage (Negative) - V
0·1 1 10
Off-State Capacitance - pF
10
100
TC1LAJ
50
'1072F3
'1082F3
200
Third Terminal = 0 to -50 V
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
PEAK FORWARD RECOVERY VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
OFF-STATE CAPACITANCE
vs
R OR T TERMINAL VOLTAGE (NEGATIVE)
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G or T and G Terminals
Figure 11. Figure 12.
Figure 13.
R or T Terminal Voltage (Positive) - V
0·01 0·1
Off-St ate Capaci tance - pF
150
200
100
TC1LAK
0·3
'1072F3
'1082F3
Third Te rminal = 0 to -5 0 V
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Off-State Capacitance - pF
10
100
TC1LAB
500
Terminal Bias = 0
Terminal Bias = -50 V
'1072F3
'1082F3
'1072F3
'1082F3
Third Terminal = 0 to -50 V
Decay Time - µs
10 100 1000
Maximum Surge Current - A
10
100
1000 TC1LAA
2
OFF-STATE CAPACITANCE
vs
R OR T TERMINAL VOLTAGE (POSITIVE)
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
SURGE CURRENT
vs
DECAY TIME
TISP1xxxF3 Overvoltage Protector Series
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Figure 14. Figure 15.
Figure 16. Figure 17.
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-State Current - µA
0·001
0·01
0·1
1
10
100
TC1LAN
V
D
= ±50 V
T - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Breakdown Voltages - V
60.0
70.0
80.0
90.0
TC1LAM
I
(BR)
= 1 mA
'1072F3
'1082F3
V
(BR)
V
(BO)
V
(BR)M
V
(BO)
V
(BR)
V
(BR)M
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
H
, I
(BO)
- Hol ding Current, Breakover Current - A
0·07
0·08
0·09
0·1
0·2
0·3
0·4
0·5
0·6
0·7
0·8
0·9
1·0
TC1LAO
I
(BO)
I
H
di/dt - Rate of Rise of Principle Current - A/µs
0·001 0·01 0·1 1 10 100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
TC1LAI
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
J
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and T Terminals
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and T Terminals
Figure 18.
Terminal Voltage - V
0·1 1 10
Off-State Capacitance -pF
20
30
40
50
60
70
80
90
10
100 TC1LAP
50
Both Voltage Polarities
D Package
P Package
SL Pac ka g e
V
G
> V
R
or V
T
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
TISP1xxxF3 Overvoltage Protector Series
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Thermal Information
Figure 19. Figure 20.
t - Cur rent Dur a tio n - s
0·1 1 10 100 1000
I
TRMS
- Maximum Non-Recurrent 50 Hz Current - A
1
10
TI1LAA
VGEN = 250 Vrms
RGEN = 10 to 150 Ω
D Package
SL Package
P Package
t - Power Pulse Duration - s
0·0001 0·001 0·01 0·1 1 10 100 1000
Z
θJA
- Transient Thermal Impedance - °C/W
1
10
100
D Package P Package
SL Packag e
TI1MAA
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION THERMAL RESPONSE
TISP1xxxF3 Overvoltage Protector Series
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50% of the
maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 µs wave shape would have a
peak current value of 50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP® surge current graph comprehends the wave shapes of
commonly used surges.
Electrical Characteristics
Lightning Surge
Wave Shape Notation
Generators
Current Rating
APPLICATIONS INFORMATION
TISP1xxxF3 Overvoltage Protector Series
Standard Open Circuit Voltage Short Circuit Current
ITU-T K.21 1.5 kV, 10/700 µs37.5 A, 5/310 µs
ITU-T K.20 1 kV, 10/700 µs25A, 5/310 µs
IEC 61000-4-5, combination wave generator 1.0 kV, 1.2/50 µs500 A, 8/20 µs
Telcordia GR-1089-CORE 1.0 kV, 10/1000 µs100 A, 10/1000 µs
Telcordia GR-1089-CORE 2.5 kV, 2/10 µs500 A, 2/10 µs
FCC Part 68, Type A 1.5 kV, <10/>160 µs200 A,<10/>160 µs
FCC Part 68, Type A 800 V, <10/>560 µs100 A,<10/>160 µs
FCC Part 68, Type B 1.5 kV, 9/720 µs37.5 A, 5/320 µs
The electrical characteristics of a TISP® device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend
on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which
generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters’ temperature coefficient,
the power dissipated and the thermal response curve, Zθ (see M. J. Maytum, “Transient Suppressor Dynamic Parameters.” TI Technical
Journal, vol. 6, No. 4, pp.63-70, July-August 1989).
There are three categories of surge generator types, single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open circuit voltage
and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit
current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically
produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape
produced is intermediate between the open circuit and short circuit values.
When the TISP® device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in
terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP® surge capability. As an example, the
ITU-T K.21 1.5 kV, 10/700 µs open circuit voltage surge is changed to a 38 A, 5/310 µs current waveshape when driving into a short circuit.
Thus, the TISP® surge current capability, when directly connected to the generator, will be found for the ITU-T K.21 waveform at 310 µs on the
surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value. A 1 kV
open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 Ω (1000/100). If the equipment has a series
resistance of 25 Ω then the surge current requirement of the TISP® device becomes 29 A (1000/35) and not 100 A.
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Capacitance
Off-state Capacitance
Protection Voltage
TISP1xxxF3 Overvoltage Protector Series
Figure 21.
V
d
- RMS AC Test Voltage - mV
1101001000
Normalized Capacitance
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
AIXXAA
Normalized to V
d
= 100 mV
DC Bias, V
D
= 0
NORMALIZED CAPACITANCE
vs
RMS AC TEST VOLTAGE
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can
be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 8.). An estimate of the
di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is
higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series
resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice, the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP® device
breakdown region.
The off-state capacitance of a TISP® device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD,
and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C variation
of capacitance value with a.c. bias is shown in Figure 21. When VD>> Vd, the capacitance value is independent on the value of Vd. The
capacitance is essentially constant over the range of normal telecommunication frequencies.
APPLICATIONS INFORMATION
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION
TISP1xxxF3 Overvoltage Protector Series
Longitudinal Balance
Figure 22.
CTG
CRG
CTR
Equipment
T
R
G
(CTG-CRG)
CRG
CTR
Equipment
T
R
G
CRG
CTG > CRG Equivalent Unbal ance
AIXXAB
Figure 22 shows a three terminal TISP® device with its equivalent “delta” capacitance. Each capacitance, CTG, CRG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line
capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
D008 Plastic Small-outline Package
TISP1xxxF3 Overvoltage Protector Series
MECHANICAL DATA
NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0.15 (0.006).
D. Lead tips to be planar within ±0.051 (0.002).
D008
8765
4
3
2
1
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
MDXXAAC
INDEX
4.80 - 5.00
(0.189 - 0.197)
5.80 - 6.20
(0.228 - 0.244)
3.81 - 4.00
(0.150 - 0.157)
1.35 - 1.75
(0.053 - 0.069)
0.102 - 0.203
(0.004 - 0.008)
0.28 - 0.79
(0.011 - 0.031)
0.51 - 1.12
(0.020 - 0.044)
4.60 - 5.21
(0.181 - 0.205)
0.36 - 0.51
(0.014 - 0.020)
0.25 - 0.50
(0.010 - 0.020)
0.190 - 0.229
(0.0075 - 0.0090)
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
x 45 ° N0M
8 Places
7 ° NOM
4 Places
7 ° NOM
3 Places
4 ° ± 4 °
DIMENSIONS ARE: METRIC
(INCHES)
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
TISP1xxxF3 Overvoltage Protector Series
D008 Tape DImensions
0.8
(0.03)
1.50
(.059)
3.90 - 4.10
(.154 - .161)
5.40 - 5.60
(.213 - .220)
1.95 - 2.05
(.077 - .081)
7.90 - 8.10
(.311 - .319)
6.30 - 6.50
(.248 - .256)
11.70 - 12.30
(.461 - .484)
D008 Package (8-pin Small Outline) Single-Sprocket Tape
Direction of Feed
ø MIN.
Carrier Tape
Embossment
Cover
Tape
NOTES: A. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
Reel hub diameter:
Reel axial hole:
B. 2500 devices are on a reel.
MDXXATB
DIMENSIONS ARE: METRIC
(INCHES)
330 +0.0/-4.0
(12.992 +0.0/-.157)
100 ± 2.0
(3.937 ± .079)
13.0 ± 0.2
(.512 ± .008)
0 MIN.
MIN.
0.40
(0.016)
2.0 - 2.2
(.079 - .087)
1.50 - 1.60
(.059 - .063)
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. The package is intended for insertion in mounting-hole rows on 7.62 (0.300) centers. Once the leads are compressed and
inserted, sufficient tension is provided to secure the package in the board during soldering. Leads require no additional cleaning or processing
when used in soldered assembly.
P008 Plastic Dual-in-line Package
TISP1xxxF3 Overvoltage Protector Series
MECHANICAL DATA
P008
312 4
8765
Seating
Plane
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Dimensions fall within JEDEC MS001 - R-PDIP-T, 0.300" Dual-In-Line Plastic Family.
MDXXCF
Index
Notch
9.25 - 9.75
(0.364 - 0.384)
6.10 - 6.60
(0.240 - 0.260)
5.08
(0.200)
1.78
(0.070) MAX.
4 Places
8 Places
MAX.
3.17
(0.125) MIN.
0.51
(0.020) MIN.
2.54
(0.100) Typical
(see Note A)
6 Places
0.38 - 0.53
(0.015 - 0.021)
7.62 - 8.23
(0.300 - 0.324)
8.38 - 9.40
(0.330 - 0.370)
0.20 - 0.36
(0.008 - 0.014)
DIMENSIONS ARE: METRIC
(INCHES)
SEPTEMBER 1993 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
SL003 3-pin Plastic Single-in-line Package
TISP1xxxF3 Overvoltage Protector Series
MECHANICAL DATA
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SL003
2
1 3
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane.
MDXXCE
Index
Notch
9.25 - 9.75
(0.364 - 0.384)
3.20 - 3.40
(0.126 - 0.134)
6.10 - 6.60
(0.240 - 0.260)
0.203 - 0.356
(0.008- 0.014)
0.559 - 0.711
(0.022 - 0.028)
3 Places
12.9
(0.492)
DIMENSIONS ARE: METRIC
(INCHES)
4.267
(0.168)
MIN.
MAX.
1.854
(0.073)
MAX.
8.31
(0.327)
MAX.
2.54
(0.100) Typical
(See Note A)
2 Places
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
