MJF18206 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data



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 

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The MJE/MJF18206 have an application specific state–of–the–art die dedicated to

the electronic ballast (“light ballast”) and power supply applications.

•Improved Global Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain hFE

— Fast Switching

— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)

•Full Characterization at 125

•Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric

Distributions

•Two Package Choices: Standard TO–220 or Isolated TO–220

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

MJE18206

ÎÎÎÎ

MJF18206

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎ

600

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎ

1200

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCES

ÎÎÎÎÎÎÎ

1200

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎ

ICM

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎ

IBM

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

RMS Isolation Voltage (2) Per Figure 22

(for 1 sec, R.H. ≤ 30%) Per Figure 23

TC = 25°C Per Figure 24

ÎÎÎÎ

VISOL1

VISOL2

VISOL3

ÎÎÎÎ

4500

3500

1500

ÎÎÎ

Volts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Total Device Dissipation @ TC = 25°C

*Derate above 25

ÎÎÎÎ

100

0.8

ÎÎÎÎ

0.32

ÎÎÎ

Watt

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Temperature

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

MJE18206

ÎÎÎÎ

MJF18206

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance — Junction to Case

— Junction to Ambient

ÎÎÎÎ

RθJC

RθJA

ÎÎÎÎ

1.25

62.5

ÎÎÎÎ

3.125

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

ÎÎÎÎ

ÎÎÎÎÎÎÎ

260

ÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

(2) Proper strike and creepage distance must be provided.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE18206/D

 Motorola, Inc. 1995





POWER TRANSISTORS

8 AMPERES

1200 VOLTS

40 and 100 WATTS

CASE 221A–06

TO–220AB

CASE 221D–02

TO–220 FULLPACK

 

2 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

(IC = 200 mA, L = 25 mH, R = 200 Ω)

ÎÎÎÎ

VCEO(sus)

VCER(sus)

ÎÎÎÎ

550

600

ÎÎÎÎ

630

700

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

(ICBO = 1 mA, IE = 0)

ÎÎÎÎ

VCBO

ÎÎÎÎ

1200

ÎÎÎÎ

1320

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Breakdown Voltage

(IEBO = 1 mA, IC = 0)

ÎÎÎÎ

VEBO

ÎÎÎÎ

12.9

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 550 V, IB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎÎ

200

2000

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated VCES, VBE = 0)

Collector Cutoff Current (VCE = 1000 V, VBE = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎÎ

100

1000

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 1200 V, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 1.3 Adc, IB = 0.13 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

0.77

0.67

ÎÎÎ

0.9

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 Adc, IB = 0.4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.85

0.75

ÎÎÎ

1.1

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 3 Adc, IB = 0.6 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.91

0.8

ÎÎÎ

1.1

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 1.3 Adc, IB = 0.13 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

0.3

0.4

ÎÎÎ

0.75

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 3 Adc, IB = 0.6 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.4

0.8

ÎÎÎ

0.75

1.25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.5 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 1 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 3 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 mAdc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

ÎÎÎ

200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance (VEB = 8 Vdc)

ÎÎÎÎ

Cib

ÎÎÎÎ

ÎÎÎ

2000

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 1 µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IC = 1.3 Adc

IB1 = 130 mAdc

VCC = 300 V

ÎÎÎ

@ 1 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

VCE(dsat)

ÎÎÎÎ

7.5

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Voltage:

Determined 1 µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IB1 = 130 mAdc

VCC = 300 V

ÎÎÎ

@ 3 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

4.5

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Determined 1 µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IC = 3 Adc

IB1 = 0.6 Adc

VCC = 300 V

ÎÎÎ

@ 1 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

14.5

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IB1 = 0.6 Adc

VCC = 300 V

ÎÎÎ

@ 3 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

 

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

C = 3 Adc, IB1 = 0.6 Adc

IB2 = 1.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ton

ÎÎÎÎ

200

ÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IC = 3 Adc, IB1 = 0.6 Adc

IB2 = 1.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

2.5

ÎÎÎ

2.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

C = 3 Adc, IB1 = 0.6 Adc

IB2 = 0.6 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ton

ÎÎÎÎ

190

ÎÎÎ

250

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IC = 3 Adc, IB1 = 0.6 Adc

IB2 = 0.6 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

3.7

4.5

ÎÎÎ

4.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc, IB1 = 70 mAdc

IB2 = 1 Adc

VCC = 125 Vdc

PW = 70 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

125

ÎÎÎ

300

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

IC = 1 Adc, IB1 = 70 mAdc

IB2 = 1 Adc

VCC = 125 Vdc

PW = 70 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

400

ÎÎÎ

750

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 1 Adc

VCC = 125 Vdc

PW = 70 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

600

ÎÎÎ

1.2

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

PW = 70 µs

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

450

ÎÎÎ

700

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc, IB1 = 100 mAdc

IB2 = 500 mAdc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ton

ÎÎÎÎ

250

225

ÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 500 mAdc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

2.5

ÎÎÎ

2.75

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 1.3 Adc

IB1 = 0.13 Adc

IB2 = 0.65 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

150

225

ÎÎÎ

200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 1.3 Adc

IB1 = 0.13 Adc

IB2 = 0.65 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

1.6

1.9

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.65 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

260

300

ÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 3 Adc

IB1 = 0.6 Adc

IB2 = 1.5 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

300

400

ÎÎÎ

450

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 3 Adc

IB1 = 0.6 Adc

IB2 = 1.5 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

2.25

2.5

ÎÎÎ

2.75

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 1.5 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

500

700

ÎÎÎ

800

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 3 Adc

IB1 = 0.6 Adc

IB2 = 0.6 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

350

500

ÎÎÎ

500

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 3 Adc

IB1 = 0.6 Adc

IB2 = 0.6 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

4.25

5.1

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.6 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

600

1100

ÎÎÎ

800

ÎÎÎÎ

 

4 Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

C TJ = 25

TJ = –20

VCE = 1 V

Figure 2. DC Current Gain @ 3 Volts

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = –20

VCE = 3 V

Figure 3. DC Current Gain @ 5 Volts

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

CVCE = 5 V

Figure 4. Collector Saturation Region

010000100010010 IB, BASE CURRENT (mA)

VCE, VOLTAGE (VOLTS)

7 A

5 A

4 A

Figure 5A. Collector–Emitter Saturation Voltage

0.01 1010.10.001 IC, COLLECTOR CURRENT (AMPS)

IC/IB = 5

VCE, VOLTAGE (VOLTS)

0.1

TJ = 125

TJ = 25

TJ = –20

0.01 0.01

0.01

3 A

VCE(sat)

(IC = 2 A)

Figure 5B. Collector–Emitter Saturation Voltage

0.01 1010.10.001 IC, COLLECTOR CURRENT (AMPS)

IC/IB = 10

VCE, VOLTAGE (VOLTS)

0.1

0.01 0.01

TJ = 125

TJ = 25

TJ = –20

TJ = 25

TJ = –20

TJ = 25

VCE(sat)

(IC = 1 A)

 

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 6. Base–Emitter Saturation Region

1.5

0100.10.001 IC, COLLECTOR CURRENT (AMPS)

VBE, VOLTAGE (VOLTS)

0.5

0.01

IC/IB = 5

IC/IB = 10

TJ = 125

TJ = 25

TJ = –20

Figure 7. Capacitance

10000

10 100101 VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

1000

TJ = 25

f(test) = 1 MHz

100

Cib (pF)

Cob (pF)

t, TIME (ns)

Figure 8. Resistive Switching, ton

1600

0510.5 IC, COLLECTOR CURRENT (AMPS)

1.5

800

IC/IB = 10

IC/IB = 5

IB1 = IB2

VCC = 300 V

PW = 20

1400

1200

1000

600

400

200

2 2.5 3 3.5 4 4.5

125

Figure 9. Resistive Switching, toff

IC, COLLECTOR CURRENT (AMPS)

t, TIME ( s)

TJ = 25

TJ = 125

IC/IB = 10

IC/IB = 5

510.5 1.5 2 2.5 3 3.5 4 4.5

IB1 = IB2

VCC = 300 V

PW = 20

t, TIME (ns)

Figure 10. Inductive Storage Time, tsi

23.510.5 IC, COLLECTOR CURRENT (AMPS)

1.5

TJ = 125

TJ = 25

IC/IB = 5

32.52

IC/IB = 10

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Figure 11. Inductive Storage Time

31573 hFE, FORCED GAIN 13

TJ = 125

TJ = 25

, STORAGE TIME (t si

5 11

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

IC = 1 A

IC = 2 A

 

6 Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 12. Inductive Switching,

tc & tfi @ IC/IB = 5

1500

0310 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

1000

500

TJ = 125

TJ = 25

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Figure 13. Inductive Switching,

tc & tfi @ IC/IB = 10

1100

100

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

TJ = 125

TJ = 25

30 42

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

900

700

500

300

Figure 14. Inductive Fall Time

680

80 1573 hFE, FORCED GAIN

480

tfi, FALL TIME (ns)

280

TJ = 125

TJ = 25

115 13

IC = 2 A

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

IC = 1 A

Figure 15. Inductive Crossover Time

1200

600

200 1553 hFE, FORCED GAIN

1000

tc, CROSSOVER TIME (ns)

TJ = 125

TJ = 25

9 10 11

800

400

4 6 8 12 13 14

IC = 2 A

IC = 1 A

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Figure 16. BVCER = f (RBE)

1400

600 100010010 RBE (

Ω

)

BVCER (VOLTS)

TJ = 25

BVCER (VOLTS) @ 10 mA

1300

800 BVCER(sus) @ 200 mA

1200

1100

1000

900

700

Figure 17. Forward Bias Safe Operating Area

100

0.01 10001 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100

0.1

IC, COLLECTOR CURRENT (AMPS)

5 ms 1 ms 10

MJE18206–DC

MJF18206–DC

tfi

tfi tfi

EXTENDED SOA

 

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 18. Reverse Bias Switching Safe

Operating Area

01200400 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

600

IC, COLLECTOR CURRENT (AMPS)

0 V –1.5 V

–5 V

≤

125

GAIN

≥

LC = 4 mH

800

1000

POWER DERATING FACTOR

Figure 19. Forward Bias Power Derating

TC, CASE TEMPERATURE (

1.0

0.8

0.6

0.4

0.2

016014012010080604020

SECOND

BREAKDOWN

DERATING

THERMAL

DERATING

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC–VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 17 is based

on TC = 25°C; TJ(pk) is variable depending on power level.

Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 17 may be found at any case temperature by using

the appropriate curve on Figure 19.

TJ(pk) may be calculated from the data in Figures 22 and

23. At any case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown. For inductive

loads, high voltage and current must be sustained simulta-

neously during turn–off with the base–to–emitter junction

reverse biased. The safe level is specified as a reverse–

biased safe operating area (Figure 18). This rating is verified

under clamped conditions so that the device is never

subjected to an avalanche mode.

Figure 20. Dynamic Saturation

Voltage Measurements Figure 21. Inductive Switching Measurements

TIME

TYPICAL SWITCHING CHARACTERISTICS

(IB1 = IB2 FOR ALL CURVES)

0820 6

1 3 5 7

VCE

0 V

90% IB

dyn 1

dyn 3

Vclamp

tsi

tfi

90% IC

10% IC

90% IB1

10% Vclamp

TIME

 

8 Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(IB1 = IB2 FOR ALL CURVES)

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH

RB2 =

∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200

RB2 = 0

VCC = 15 Volts

RB1 selected for desired IB1

RBSOA

L = 500

RB2 = 0

VCC = 15 Volts

RB1 selected for desired IB1

+15 V

F150

Ω

3 W 100

Ω

3 W

MPF930

+10 V

Ω

COMMON

–Voff

500

MPF930

MTP8P10

MUR105

MJE210 MTP12N10

MTP8P10

150

Ω

3 W

100

Iout

RB1

RB2

IC PEAK

VCE PEAK

VCE

IB1

IB2

 

Motorola Bipolar Power Transistor Device Data

JC(t) = r(t) R

JC = 1.25

C/W MAX

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.01

t, TIME (ms)

Figure 22. Typical Thermal Response (ZθJC(t)) for MJE18206

r(t), TRANSIENT THERMAL

0.01 0.1 1 10 100

0.1

1000

TYPICAL THERMAL RESPONSE

(IB1 = IB2 FOR ALL CURVES)

RESISTANCE (NORMALIZED)

0.01

t, TIME (ms)

Figure 23. Typical Thermal Response (ZθJC(t)) for MJF18206

r(t), TRANSIENT THERMAL

0.01 0.1 1 10 100

0.1

100000

RESISTANCE (NORMALIZED)

1000 10000

JC(t) = r(t) R

JC = 3.55

C/W MAX

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.5

0.2

0.1

0.05

0.02

SINGLE PULSE

0.5

0.2

0.1

0.05

0.02 SINGLE PULSE

 

10 Motorola Bipolar Power Transistor Device Data

MOUNTED

FULLY ISOLATED

PACKAGE LEADS

HEATSINK

0.110

″

MIN

Figure 24. Clip Mounting Position for

Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP

MOUNTED

FULLY ISOLATED

PACKAGE LEADS

HEATSINK

CLIP 0.107

″

MIN

MOUNTED

FULLY ISOLATED

PACKAGE LEADS

HEATSINK

0.107

″

MIN

Figure 25. Clip Mounting Position

for Isolation Test Number 2 Figure 26. Screw Mounting Position

for Isolation Test Number 3

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque of 6 to 8 in .lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a

constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw , without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the pack-

age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10

in .lbs of mounting torque under any mounting conditions.

Figure 27. Typical Mounting Techniques

for Isolated Package

Figure 27a. Screw–Mounted Figure 27b. Clip–Mounted

MOUNTING INFORMATION**

**For more information about mounting power semiconductors see Application Note AN1040.

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. GATE

2. DRAIN

3. SOURCE

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B0.394 0.402 10.01 10.21

C0.181 0.189 4.60 4.80

D0.026 0.034 0.67 0.86

F0.121 0.129 3.08 3.27

G0.100 BSC 2.54 BSC

H0.123 0.129 3.13 3.27

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.14 1.52

N0.200 BSC 5.08 BSC

Q0.126 0.134 3.21 3.40

R0.107 0.111 2.72 2.81

S0.096 0.104 2.44 2.64

U0.259 0.267 6.58 6.78

–B–

–Y–

3 PL

1 2 3

0.25 (0.010) Y

SEATING

PLANE

–T–

CASE 221D–02

(ISOLATED TO–220 TYPE)

UL RECOGNIZED: FILE #E69369

ISSUE D

 

12 Motorola Bipolar Power Transistor Device Data

How to reach us:

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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MJE18206/D

*MJE18206/D*

◊