MMS9014
Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking : J6
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0)
50 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=0.1mAdc, IB=0)
45 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=100uAdc, IC=0)
5.0 --- Vdc
I
CBO Collector Cutoff Current
(VCB=50Vdc, I
E=0)
--- 0.1 uAdc
I
CEO Collector Cutoff Current
(VCE=35Vdc, I
B=0)
--- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=3.0Vdc, I
C=0)
--- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(I
C=1.0mAdc, VCE=5.0Vdc)
200 450 ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=100mAdc, IB=5.0mAdc)
--- 0.3 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=100mAdc, IB=5.0mAdc)
--- 1.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(I
C=10mAdc, VCE=5.0Vdc, f=30MHz)
150 --- MHz
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
GH
.079
2.000 in
h
mm
.800
.035
.900
.
7
.950
.037
.950
K
F
Revision: 5 2008/01/01
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
E
B
C
www.mccsemi.com
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• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1