© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 10 1Publication Order Number:
MJH11017/D
MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
•High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
•Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
•Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
•Monolithic Construction
•These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCEO 150
200
250
Vdc
Collector−Base VoltageMJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCB 150
200
250
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous
− Peak (Note 1) IC15
30 Adc
Base Current IB0.5 Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_CPD150
1.2 W
W/_C
Operating and Storage Junction Temperature
Range TJ, Tstg –65 to
+150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.83 _C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
SOT−93
(TO−218)
CASE 340D
STYLE 1
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR 2
BASE
1
EMITTER 3
COLLECTOR 2
BASE
1
EMITTER 3
NPN PNP
MJH11018 MJH11017
MJH11020
MJH11022
MJH11019
MJH11021
3
2
1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device wil
l
be available only in the TO−247
package. Reference FPCN# 16827.
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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2
MARKING DIAGRAMS
AYWWG
MJH110xx
MJH110xx
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
1 BASE
2 COLLECTOR
3 EMITTER
TO−247 TO−218
ORDERING INFORMATION
Device Order Number Package Type Shipping
MJH11017G TO−218
(Pb−Free) 30 Units / Rail
MJH11018G TO−218
(Pb−Free) 30 Units / Rail
MJH11019G TO−218
(Pb−Free) 30 Units / Rail
MJH11020G TO−218
(Pb−Free) 30 Units / Rail
MJH11021G TO−218
(Pb−Free) 30 Units / Rail
MJH11022G TO−218
(Pb−Free) 30 Units / Rail
MJH11017G TO−247
(Pb−Free) 30 Units / Rail
MJH11018G TO−247
(Pb−Free) 30 Units / Rail
MJH11019G TO−247
(Pb−Free) 30 Units / Rail
MJH11020G TO−247
(Pb−Free) 30 Units / Rail
MJH11021G TO−247
(Pb−Free) 30 Units / Rail
MJH11022G TO−247
(Pb−Free) 30 Units / Rail
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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3
PD, POWER DISSIPATION (WATTS)
160
0
TC, CASE TEMPERATURE (°C)
40 60 100 120 16080 14020
Figure 1. Power Derating
0
20
40
60
80
100
140
120
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 0.1 Adc, IB = 0) MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
150
200
250
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018
(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020
(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICEV
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.5
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
400
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
15,000
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.5
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
ÎÎÎÎ
ÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
3.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance MJH11018, MJH11020, MJH11022
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021
ÎÎÎÎ
ÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
400
600
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
75
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Typical
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
NPN
ÎÎÎÎ
ÎÎÎÎ
PNP
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
ÎÎÎÎ
ÎÎÎÎ
td
ÎÎÎ
ÎÎÎ
150
ÎÎÎÎ
ÎÎÎÎ
75
ÎÎÎ
ÎÎÎ
ns
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rise Time
ÎÎÎÎ
ÎÎÎÎ
tr
ÎÎÎ
ÎÎÎ
1.2
ÎÎÎÎ
ÎÎÎÎ
0.5
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎ
ÎÎÎÎ
ts
ÎÎÎ
ÎÎÎ
4.4
ÎÎÎÎ
ÎÎÎÎ
2.7
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎ
ÎÎÎÎ
tf
ÎÎÎ
ÎÎÎ
2.5
ÎÎÎÎ
ÎÎÎÎ
2.5
ÎÎÎ
ÎÎÎ
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
www.onsemi.com
4
Figure 2. Switching Times Test Circuit
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB ≈ 100 mA
MSD6100 used below IB ≈ 100 mA
tr, tf ≤ 10 ns
Duty Cycle = 1.0%
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
V2
APPROX
+12 V
0
V1
APPROX
-8.0 V
VCC
-100 V
TUT
SCOPE
RB
+4.0 V
D1
51
RC
25 ms
Figure 3. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1.0 2.0 5.0 10 20 50 100 200 500
RqJC(t) = r(t) RqJC
RqJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.1 0.50.2
RESISTANCE (NORMALIZED)
100
0
0.5
0.3
0.07
0.03
0.01 0.03 3.0 30 3000.3
0.2
0.1
0.05
0.02
0.01
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 ms
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
1.0 ms
5.0 ms
0.1 ms
dc
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
30
2.0
IC, COLLECTOR CURRENT (AMPS)
3.0 10
10
0.5
0.2
5.0
20
1.0
20 100
0
TC = 25°C SINGLE PULSE
5.0 50 25015030
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
30
140
IC, COLLECTOR CURRENT (AMPS)
60 180100
10
20
260220
0
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
L = 200 mH
IC/IB1 ≥ 50
TC = 100°C
VBE(off) = 0-5.0 V
RBE = 47 W
DUTY CYCLE = 10%
0
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished b y several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
TC = 150°C
1000
3000
2000
5000
7000
10,000
PNP NPN
Figure 6. DC Current Gain
0.2 153.01.00.5 5.0 100.3
hFE, DC CURRENT GAIN
TC = 150°C
25°C
-55°C
VCE = 5.0 V
IC, COLLECTOR CURRENT (AMPS)
100
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (AMPS)
500
200
0.7
1000
2000
5000
10,000
0.2 153.01.00.5 5.0 100.3 7.0
25°C
-55°C
VCE = 5.0 V
100
500
200
0.7
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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6
VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IB, BASE CURRENT (mA)
1.0
1.0
2.0 5.0
3.0
2.5
4.0
3.5
3.0 10 30
4.5
2.0
50 100
IC = 15 A
20
Figure 7. Collector Saturation Region
Figure 8. “On” Voltages
1.5
300 500 1000200
TJ = 25°C
IC = 10 A
IC = 5.0 A
IC, COLLECTOR CURRENT (AMPS)
3.0
2.5
VOLTAGE (VOLTS)
4.0
3.5
2.0
0.5
0.2 0.5 5.00.3 1.00.7 3.0
TJ = 25°C
VBE(sat) @ IC/IB = 100
VBE @ VCE = 5.0 V
VCE(sat) @ IC/IB = 100
7.02.0 10 20
IB, BASE CURRENT (mA)
1.0 2.0 5.03.0 10 30 50 100
IC = 15 A
20 300 500200
TJ = 25°C
IC = 10 A
IC = 5.0 A
IC, COLLECTOR CURRENT (AMPS)
1.5
1.0
1000
PNP NPN
PNP NPN
3.0
2.5
4.0
3.5
2.0
0.5
0.2 0.5 5.01.00.7
TJ = 25°C
VBE(sat) @ IC/IB = 100
VBE @ VCE = 5.0 V
VCE(sat) @ IC/IB = 100
2.0 10 20
1.5
1.0
1.0
3.0
2.5
4.0
3.5
4.5
2.0
1.5
BASE
EMITTER
COLLECTOR
BASE
EMITTER
COLLECTOR
PNP NPN
Figure 9. Darlington Schematic
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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7
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A
D
VG
K
SL
U
BQ
123
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
EC
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A--- 20.35 --- 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L--- 16.20 --- 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
TO−247
CASE 340L−02
ISSUE F
N
P
A
K
W
F
DG
U
E
0.25 (0.010) MYQS
JH
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
−Q−
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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8
P
UBLICATION ORDERING INFORMATION
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MJH11017/D
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