HiPerFETTM Power MOSFETs IXFH 80N08 VDSS IXFT 80N08 ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 80 V = 80 A = 9 m trr 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C VDGR TJ = 25C to 150C; RGS = 1 M 80 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 80 A 80 IL(RMS) Lead current limit IDM TC = 25C, pulse width limited by TJM IAR TC = 25C EAR TC = 25C EAS dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 PD TC = 25C V 75 A 320 A 80 A 50 mJ 2.5 J 5 V/ns 300 W -55 to +150 C TJM 150 C Tstg -55 to +150 C 300 C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 TO-247 AD (IXFH) 1.13/10 Nm/lb.in. 6 4 g g (TAB) TO-268 ( IXFT) Case Style G S G = Gate D = Drain S = Source TAB = Drain Features l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 80 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Advantages V l 4.0 V l 100 nA TJ = 25C TJ = 125C 50 1 A mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % 9 m (c) 2001 IXYS All rights reserved (TAB) l Easy to mount Space savings High power density 98810A (5/01) IXFH 80N08 IXFT 80N08 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 * ID25, pulse test 35 55 S 4800 pF 1675 pF Crss 590 pF td(on) 50 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 75 ns td(off) RG = 2.5 (External), 95 ns 31 ns 180 nC 42 nC 75 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % trr QRM IRM K/W IF = 25A, -di/dt = 100 A/s, VR = 25 V 80 A 320 A 1.5 V 200 ns C A 0.5 6 TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025