© 2001 IXYS All rights reserved 98810A (5/01)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C80V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ80 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C80A
IL(RMS) Lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 320 A
IAR TC= 25°C80A
EAR TC= 25°C50mJ
EAS 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
Features
lInternational standard packages
lLow RDS (on)
lRated for unclamped Inductive load
switching (UIS)
lMolding epoxies meet UL 94 V-0
flammability classification
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 80 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C50µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 9mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFETTM
Power MOSFETs
TO-268 ( IXFT) Case Style
(TAB)
G
S
VDSS =80 V
ID25 =80 A
RDS(on) = 9 m
ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 200 ns
IXFH 80N08
IXFT 80N08
(TAB)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 80N08
IXFT 80N08
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 35 55 S
Ciss 4800 pF
Coss VGS = 0 V, VDS = 2 5 V , f = 1 M H z 1675 p F
Crss 590 pF
td(on) 50 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 75 ns
td(off) RG = 2.5 Ω (External), 95 ns
tf31 ns
Qg(on) 180 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC
Qgd 75 nC
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 80 A
ISM Repetitive; pulse width limited by TJM 320 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 200 ns
QRM IF = 25A, -di/dt = 100 A/µs, VR = 25 V 0.5 µC
IRM 6A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
