DMN2300UFB4-7B - Diodes - Datasheet.Directory

DMN2300UFB4

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20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS R

DS(ON) ID

TA = +25°C

(Note 5)

20V

175mΩ @ VGS = 4.5V 1.30A

240mΩ @ VGS = 2.5V 1.11A

360mΩ @ VGS = 1.8V 0.91A

500mΩ @ VGS = 1.5V 0.82A

Description

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

• Load switch

Features

• Footprint of just 0.6mm2 – thirteen times smaller than SOT23

• 0.4mm profile – ideal for low profile applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFB4-7B NL 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information abo ut Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green " and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

e4

X2-DFN1006-3

Equivalent Circuit

Top View

Internal Schematic

Bottom View

DS

G

ESD PROTECTED TO 2kV

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

NL = Product Type Marking Code

DMN2300UFB4-7B

Top View

Bar Denotes Gate

and Source Side

NL

DMN2300UFB4

Document number: DS35269 Rev. 3 - 2 2 of 7

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 20 V

Gate-Source Voltage VGSS ±8 V

Continuous Drain Current (Note 5) Steady

State TA = +25°C

TA = +85°C ID 1.30

0.96 A

Pulsed Drain Current (Note 6) IDM 6 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) PD 500 mW

Thermal Resistance, Junction to Ambient @TA = +25°C RθJA 250 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BVDSS 20 — — V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 µA

VDS = 20V, VGS = 0V

Gate-Source Leakage IGSS — — 10 µA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS

(

th

)

0.45 — 0.95 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON)

— — 175

mΩ

VGS = 4.5V, ID = 1A

— — 240 VGS = 2.5V, ID = 750mA

— — 360 VGS = 1.8V, ID = 500mA

— — 500 VGS = 1.5V, ID = 200mA

Forward Transfer Admittance |Yfs| 40 — — mS

VDS = 3V, ID = 30mA

Diode Forward Voltage VSD — 0.7 1.2 V

VGS = 0V, IS = 300mA

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss —64.3 — pF VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss —6.1 — pF

Reverse Transfer Capacitance Crss —4.5 — pF

Gate Resistance R

g

—70 — Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge Q

g

—1.6 — nC VGS = 4.5V, VDS = 15V,

ID = 1A

Gate-Source Charge Q

g

s —0.2 — nC

Gate-Drain Charge Q

g

d —0.2 — nC

Turn-On Delay Time tD

(

on

)

—3.5 — ns VDS = 10V, ID = 1A

VGS = 10V, RG = 6Ω

Turn-On Rise Time t

r

—2.8 — ns

Turn-Off Delay Time tD

(

off

)

—38 — ns

Turn-Off Fall Time tf —13 — ns

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

DMN2300UFB4

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F ig ur e 1 Typical Ou tp ut Chara cteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

0

0.5

1.0

1.5

2.0

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.2V

GS

V = 1.5V

GS

V = 1.8V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 4.5V

GS

0

0.5

1.0

1.5

2.0

0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 5V

DS

0 0.4 0.8 1.2 1.6 2.0

Figure 3 Typical On-Resistance

vs . Dr ai n Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

0

0.2

0.4

0.6

0.8

V = 4.5V

GS

V = 2.5V

GS

V = 1.8V

GS

V = 1.5V

GS

1.0

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance

vs . Dr ai n Curre nt and Tem per ature

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

0

0.1

0.2

0.3

0.4

0.5

0.6

0 0.2 0.4 0.6 0.8 1.0

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance

vs . Dr ai n Current and Temp er ature

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

0

0.1

0.2

0.3

0.4

0.5

0.6

0 0.2 0.4 0.6 0.8 1.0

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 1.8V

GS

I , DRAIN CURRENT (A)

D

Figure 6 Typical On-Resistance

vs . Dr ai n Curre nt and Tem per ature

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

0

0.1

0.2

0.3

0.4

0.5

0.6

0 0.2 0.4 0.6 0.8 1.0

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 1.5V

GS

DMN2300UFB4

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Figure 7 On-Resistance V ariation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

R , DRAIN-SOURCE

ON-RESIST ANCE (NORMALIZED)

DSON

0.5

0.7

0.9

1.1

1.3

1.5

1.

7

V = 1.8V

I = 100mA

GS

D

V = 4.5V

I = 1.0A

GS

D

V = 1.5V

I = 50mA

GS

D

V = 2.5V

I = 500mA

GS

D

Fig ur e 8 On - R esistance Va r ia ti on with Temper ature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERAT URE (°C)

A

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSON

Ω

0

0.1

0.2

0.3

0.4

0.5

0.6

V = 1.5V

I = 50mA

GS

D

V = 1.8V

I = 100mA

GS

D

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

Figure 9 Gate Threshold V ariation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

0

0.2

0.4

0.6

0.8

1.0

1.

2

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

I = 250µA

D

I = 1mA

D

0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 10 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

0

0.4

0.8

1.2

1.6

2.0

I, S

O

U

R

C

E

C

U

R

E

N

T

(A)

S

T = 25°C

A

2 4 6 8 10 12 14 16 18 20

1

10

100

1,000

I , LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

Fig ur e 11 Ty pical Leakage C ur r ent

vs. D r ai n- Source Vo lt age

V , DRAIN-SOURCE VOL TAGE (V)

DS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = -55°C

A

1

10

100

1,000

10,000

100,000

2 4 6 8 10 12

V , GAT E-SOURCE VOLTAGE (V)

GS

Figure 12 Leakage Current vs. Gate-Source Voltage

I , LEAKA

G

E

C

U

R

EN

T

(nA)

GSS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

DMN2300UFB4

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0

2

4

6

8

0 0.5 1 1.5 2 2.5 3

Fig ur e 14 G ate-Charge Characte r is ti cs

Q , TOTAL GAT E CHARGE (nC)

g

V , GATE-SOURCE VOLTAGE (V)

GS

V = 15V

I = 1A

DS

D

0.001 0.01 0.1 1 10 100 1,000

Figure 15 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.00001 0.0001

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12

θ

R (t) = r(t) *

θ

JA

R

R = 262°C/W

θ

JA

P(pk) t

1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

DMN2300UFB4

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X2-DFN1006-3

Dim Min Max Typ

A ⎯0.40 ⎯

A1 0 0.05 0.03

b1 0.10 0.20 0.15

b2 0.45 0.55 0.50

D 0.95 1.05 1.00

E 0.55 0.65 0.60

e ⎯ ⎯ 0.35

L1 0.20 0.30 0.25

L2 0.20 0.30 0.25

L3 ⎯ ⎯ 0.40

All Dimensions in mm

Dimensions Value (in mm)

Z 1.1

G1 0.3

G2 0.2

X 0.7

X1 0.25

Y 0.4

C 0.7

L2

A1

Eb2

L1L3

D

e

b1

A

Y

C

G1

G2

X

1

Z

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