SD1053C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 920/1050 A FEATURES * * * * * * * * * * * * * DO-200AB (B-PUK) PRODUCT SUMMARY IF(AV) High power FAST recovery diode series 2.0 to 3.0 s recovery time High voltage ratings up to 3000 V RoHS High current capability COMPLIANT Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 150 C RoHS compliant Lead (Pb)-free Designed and qualified for industrial level TYPICAL APPLICATIONS 920/1050 A * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER SD1053C..L TEST CONDITIONS IF(AV) S30 1050 920 A 55 55 C 1940 1700 50 Hz 15 000 13 000 60 Hz 15 700 13 610 Range 1800 to 2500 1800 to 3000 V 3.0 s Ths IF(RMS) IFSM VRRM 2.0 trr UNITS S20 25 TJ C - 40 to 150 TJ A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 18 1800 1900 22 2200 2300 25 2500 2600 18 1800 1900 22 2200 2300 25 2500 2600 28 2800 2900 30 3000 3100 SD1053C..S20L SD1053C..S30L Document Number: 93167 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Vishay High Power Products FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature Maximum RMS forward current t = 10 ms t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms I2t t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t 55 (85) 55 (85) 1940 1700 No voltage reapplied 15 000 13 000 15 700 13 610 100 % VRRM reapplied 12 620 10 930 13 210 11 450 1125 845 Sinusoidal half wave, initial TJ = TJ maximum No voltage reapplied UNITS S30 1050 (450) 920 (390) 25 C heatsink temperature double side cooled IF(RMS) Maximum I2t for fusing S20 180 conduction, half sine wave Double side (single side) cooled IF(AV) Maximum peak, one-cycle forward, non-repetitive surge current SD1053C..L TEST CONDITIONS 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 1027 772 796 598 727 546 11 250 8450 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.34 1.51 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.48 1.67 Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.37 0.50 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.33 0.45 VFM Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.90 2.26 A C A kA2s kA2s V m Maximum forward voltage drop V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) S20 S30 TYPICAL VALUES AT TJ = 150 C TEST CONDITIONS Ipk SQUARE PULSE (A) dI/dt (A/s) 1000 100 IFM Vr (V) trr AT 25 % IRRM (s) 2.0 3.0 - 50 Qrr (C) Irr (A) 4.0 400 180 4.5 550 230 trr t dir dt Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TJ, TStg Maximum thermal resistance, case junction to heatsink RthJ-hs TEST CONDITIONS - 40 to 150 C 0.073 DC operation double side cooled 0.031 Approximate weight www.vishay.com 2 UNITS DC operation single side cooled Mounting force, 10 % Case style VALUES See dimensions - link at the end of datasheet For technical questions, contact: ind-modules@vishay.com K/W 14 700 (1500) N (kg) 255 g DO-200AB (B-PUK) Document Number: 93167 Revision: 14-May-08 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Vishay High Power Products RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.009 0.008 0.006 0.006 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.021 0.021 0.022 30 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W SD1053C..S20L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 140 120 Conduction Angle 100 80 60 30 180 60 90 120 40 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temp erature (C) 160 160 SD1053C..S30L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 140 120 100 Conduction Angle 80 60 30 60 40 90 120 180 20 0 100 200 300 400 500 600 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 160 SD1053C..S20L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 140 120 100 Conduction Period 80 30 60 60 90 40 120 180 DC 20 0 200 400 600 800 1000 1200 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 160 SD1053C..S30L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/ W 140 120 100 Conduc tion Period 80 60 30 60 40 90 120 20 180 DC 600 800 0 0 200 400 1000 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Document Number: 93167 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD1053C..L Series SD1053C..S20L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/ W 140 120 100 Conduction Angle 80 60 30 60 90 120 180 40 20 0 0 200 400 600 800 1000 1200 1400 SD1053C..S30L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 140 120 100 Conduction Period 80 30 60 60 90 120 40 180 20 DC 0 0 400 800 1200 1600 2000 Average Forward Current (A) Fig. 8 - Current Ratings Characteristics SD1053C..S20L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 140 120 100 Conduction Period 80 30 60 60 90 40 120 180 20 DC 0 0 400 800 1200 1600 2000 Maximum Average Forward Power Loss (W) Average Forward Current (A) 160 3500 3000 180 120 90 60 30 2500 2000 RMSLimit 1500 1000 Conduction Angle 500 SD1053C..S20L Series TJ = 150C 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) Average Forward Current (A) Fig. 6 - Current Ratings Characteristics Fig. 9 - Forward Power Loss Characteristics 160 SD1053C..S30L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 140 120 100 Conduction Angle 80 60 40 20 30 90 120 60 180 0 www.vishay.com 4 160 Fig. 5 - Current Ratings Characteristics 0 200 400 600 800 1000 1200 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 160 Maximum Allowable Heatsink Temperature (C) Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Vishay High Power Products 4500 DC 180 120 90 60 30 4000 3500 3000 2500 RMSLimit 2000 1500 Conduction Period 1000 SD1053C..S20L Series TJ = 150C 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) Average Forward Current (A) Fig. 7 - Current Ratings Characteristics Fig. 10 - Forward Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 SD1053C..L Series 2800 180 120 90 60 30 2400 2000 RMS Limit 1600 1200 Conduction Angle 800 SD1053C..S30L Series TJ = 150C 400 0 0 200 400 600 800 16000 Peak Half Sine Wave Forward Current (A) 3200 Vishay High Power Products Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 150 C No Voltage Reapplied 12000 Rated VRRM Reapplied 14000 10000 8000 6000 2000 0.01 1000 1200 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 11 - Forward Power Loss Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current 4500 DC 180 120 90 60 30 4000 3500 3000 2500 RMS Limit 2000 Conduction Period 1500 1000 SD1053C..S30L Series TJ = 150C 500 0 0 400 800 1200 1600 2000 12000 11000 10000 9000 8000 7000 6000 SD1053C..S20L Series 5000 4000 1 10 10000 9000 8000 7000 6000 5000 SD1053C..S30L Series 4000 3000 10 100 13000 12000 11000 10000 Maximum Non Repetitive Surg e Current Versus Pulse Train Duration. Initial TJ = 150 C No Voltag e Reapplied Rated VRRM Reapplied 9000 8000 7000 6000 5000 4000 SD1053C..S30L Series 3000 0.01 Fig. 13 - Maximum Non-Repetitive Surge Current 0.1 1 Pulse Train Dura tion (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) Document Number: 93167 Revision: 14-May-08 100 Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Peak Half Sine Wave Forward Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150 C @60 Hz 0.0083 s @50 Hz 0.0100 s 13000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150C @60 Hz 0.0083 s @50 Hz 0.0100 s 11000 1 Fig. 12 - Forward Power Loss Characteristics 14000 12000 Number Of Equa l Amplitude Half Cyc le Current Pulses (N) Average Forward Current (A) Peak Half Sine Wave Forward Current (A) SD1053C..S20L Series 4000 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Vishay High Power Products 10000 TJ = 25C Instantaneous Forward Current (A) Instantaneous Forward Current (A) 10000 TJ = 150C 1000 SD1053C..S20L Series TJ = 25C TJ = 150C 1000 SD1053C..S30L Series 100 1 1.5 2 2.5 3 3.5 4 4.5 100 5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Instantaneous Forward Voltage (V) Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z thJ-hs (K/ W) Instantaneous Forward Voltage (V) 0.1 SD1053C..S20/ S30L Series Steady State Value 0.01 R thJ-hs = 0.073 K/ W (Single Side Cooled) R thJ-hs = 0.031 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristic 160 100 V V 80 Forward Recovery (V) FP TJ = 150C I I Forward Recovery (V) FP 60 TJ = 25C 40 TJ = 150C 120 80 TJ = 25C 40 20 SD1053C..S30L Series SD1053C..S20L Series 0 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 20 - Typical Forward Recovery Characteristics www.vishay.com 6 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 21 - Typical Forward Recovery Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 SD1053C..L Series 6.5 SD1053C..S20L Series TJ= 150 C; V r > 100V 6 5.5 5 I FM= 1500 A Sine Pulse 4.5 1000 A 4 500 A 3.5 3 2.5 10 100 Vishay High Power Products Maximum Reverse Rec overy Time - Trr (s) Maximum Reverse Recovery Time - Trr (s) Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 1000 SD1053C..S30L Series TJ= 150 C; V r > 100V 8 7.5 7 6.5 6 I FM = 1500 A Sine Pulse 5.5 1000 A 5 500 A 4.5 4 3.5 10 100 1000 Fig. 22 - Recovery Time Characteristics Fig. 25 - Recovery Time Characteristics Maximum Reverse Rec overy Charge - Qrr (C) Rate Of Fa ll Of Forward Current - di/ dt (A/ s) Maximum Reverse Rec overy Charge - Qrr (C) Rate Of Fall Of Forward Current - di/dt (A/ s) 9 8.5 I FM= 1500 A Sine Pulse 900 800 1000 A 700 600 500 A 500 400 300 200 SD1053C..S20L Series TJ = 150 C; Vr > 100V 100 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/s) Maximum Reverse Recovery Current - Irr (A) Fig. 23 - Recovery Charge Characteristics 500 I = 1500 A FM Sine Pulse 450 400 1000 A 500 A 350 300 250 200 150 100 SD1053C..S20L Series TJ = 150 C; Vr > 100V 50 0 0 50 100 150 200 250 300 Rate Of Fa ll Of Forward Current - d i/ dt (A/ s) Fig. 24 - Recovery Current Characteristics Document Number: 93167 Revision: 14-May-08 1600 I FM = 1500 A 1400 Sine Pulse 1200 1000 A 1000 500 A 800 600 400 SD1053C..S30L Series TJ = 150C; V r > 100V 200 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 26 - Recovery Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) 1000 700 I FM = 1500 A 600 Sine Pulse 1000 A 500 500 A 400 300 200 SD1053C..S30L Series TJ = 150C; V r > 100V 100 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 27 - Recovery Current Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD1053C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 1E4 1E4 10 joules p er pulse Peak Forward Current (A) Peak Forward Current (A) 6 4 2 1 0.6 0.4 1E3 0.2 0.08 SD1053C..S20L Series Sinusoidal Pulse TJ = 150C, VRRM = 800V dv/ dt = 1000V/ s tp 1E2 1E1 1E2 1E3 2000 1E3 4000 6000 tp 20000 1E2 1E1 1E4 1E2 1E4 Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics 1E4 6000 1E3 10000 SD1053C..S20L Series Sinusoida l Pulse TC= 55C, VRRM = 800V dv/ d t = 1000V/ us 15000 tp 20000 Peak Forward Current (A) 400 200 100 50 Hz 1000 4000 6 1E2 1E3 2 1 1E3 0.8 0.6 0.4 SD1053C..S20L Series Trapezoidal Pulse TJ = 150C, VRRM = 800V d v/ dt = 1000V/ s, di/ dt = 100A/ s 1E2 1E1 1E4 10 joules per p ulse 4 tp 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 29 - Frequency Characteristics Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 10 joules p er p ulse 6 4 2 1 1E3 0.6 0.8 0.4 tp SD1053C..S20L Series Trapezoidal Pulse TJ = 150C, VRRM = 800V dv/ dt = 1000V/ s, di/ dt = 300A/ s 1E2 1E3 Peak Forward Current (A) Peak Forward Current (A) 1E3 Pulse Basewidth (s) 3000 www.vishay.com 8 SD1053C..S20L Series Trapezoidal Pulse TC= 55C, VRRM = 800V dv/ dt = 1000V/ us, di/ dt = 300A/ us 10000 Pulse Basewidth (s) 2000 1E2 1E1 100 50 Hz 400 200 1000 600 3000 15000 1E4 Peak Forward Current (A) 1500 2000 4000 1E3 100 50 Hz 6000 10000 15000 20000 1E4 400 200 1000 600 1E2 1E1 tp 1E2 SD1053C..S20L Series Trap ezoid al Pulse TC= 55C, VRRM = 800V d v/ dt = 1000V/us d i/ dt = 100A/ us 1E3 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics For technical questions, contact: ind-modules@vishay.com 1E4 Document Number: 93167 Revision: 14-May-08 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 1E4 Vishay High Power Products 1E4 4 6 Peak Forward Current (A) Peak Forward Current (A) 10 joules per pulse 2 1 0.6 0.4 1E3 0.2 SD1053C..S30L Series Sinusoidal Pulse TJ = 150C, VRRM = 1000V dv/ d t = 1000V/ s tp 1E2 1E1 1E2 1E3 100 50 Hz 3000 4000 SD1053C..S30L Series Tra pezoidal Pulse TC= 55C, VRRM = 1000V dv/ dt = 1000V/ us, di/ dt = 300A/ us 6000 tp 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 37 - Frequency Characteristics 1E4 400 200 100 50 Hz 1000 2000 3000 4000 6000 1E3 10000 15000 tp 20000 1E2 1E1 SD1053C..S30L Series Sinusoidal Pulse TC= 55C, VRRM = 1000V d v/ dt = 1000V/us 1E2 1E3 Peak Forward Current (A) Peak Forward Current (A) 1E3 10000 1E4 600 200 1500 2000 15000 1E4 4 0.8 1E3 1 0.6 SD1053C..S30L Series Trap ezoid al Pulse TJ = 150C, VRRM = 1000V dv/ dt = 1000V/ s, di/ dt = 100A/ s 1E2 1E1 1E4 10 joules p er pulse 6 2 tp 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 35 - Frequency Characteristics Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 10 joules per p ulse Peak Forward Current (A) Peak Forward Current (A) 1000 400 6 4 2 1E3 1 0.8 0.6 tp SD1053C..S30L Series Trapezoidal Pulse TJ = 150C, VRRM = 1000V dv/ dt = 1000V/ s, di/ dt = 300A/ s 1E2 1E1 1E2 1E3 1000 2000 3000 1E3 100 400 200 6000 10000 1E2 1E1 tp 1E2 SD1053C..S30L Series Trapezoidal Pulse TC= 55C, VRRM = 1000V dv/ dt = 1000V/ us, di/ dt = 100A/ us 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics Document Number: 93167 Revision: 14-May-08 50 Hz 4000 15000 1E4 600 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 SD1053C..L Series Fast Recovery Diodes (Hockey PUK Version), 920/1050 A Vishay High Power Products ORDERING INFORMATION TABLE Device code SD 105 3 C 30 S30 L 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code 7 - L = PUK case DO-200AB (B-PUK) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 http://www.vishay.com/doc?95246 For technical questions, contact: ind-modules@vishay.com Document Number: 93167 Revision: 14-May-08 Outline Dimensions Vishay Semiconductors DO-200AB (B-PUK) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) 0.8 (0.03) both ends 53 (2.09) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95246 Revision: 05-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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