Document Number: 93167 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 1
Fast Recovery Diodes
(Hockey PUK Version), 920/1050 A
SD1053C..L Series
Vishay High Power Products
FEATURES
• High power FAST recovery diode series
• 2.0 to 3.0 µs recovery time
• High voltage ratings up to 3000 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AB (B-PUK)
• Maximum junction temperature 150 °C
• RoHS compliant
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 920/1050 A
DO-200AB (B-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD1053C..L UNITS
S20 S30
IF(AV)
1050 920 A
Ths 55 55 °C
IF(RMS) 1940 1700
A
IFSM
50 Hz 15 000 13 000
60 Hz 15 700 13 610
VRRM Range 1800 to 2500 1800 to 3000 V
trr
2.0 3.0 µs
TJ25 °C
TJ- 40 to 150
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
SD1053C..S20L
18 1800 1900
50
22 2200 2300
25 2500 2600
SD1053C..S30L
18 1800 1900
22 2200 2300
25 2500 2600
28 2800 2900
30 3000 3100
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2Revision: 14-May-08
SD1053C..L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS SD1053C..L UNITS
S20 S30
Maximum average forward current
at heatsink temperature IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
1050 (450) 920 (390) A
55 (85) 55 (85) °C
Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 1940 1700
A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
15 000 13 000
t = 8.3 ms 15 700 13 610
t = 10 ms 100 % VRRM
reapplied
12 620 10 930
t = 8.3 ms 13 210 11 450
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1125 845
kA2s
t = 8.3 ms 1027 772
t = 10 ms 100 % VRRM
reapplied
796 598
t = 8.3 ms 727 546
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 250 8450 kA2√s
Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.34 1.51 V
High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.48 1.67
Low level value of forward
slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.37 0.50
mΩ
High level value of forward
slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.33 0.45
Maximum forward voltage drop VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave 1.90 2.26 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(µs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
S20 2.0 1000 100 - 50 4.0 400 180
S30 3.0 4.5 550 230
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
case junction to heatsink RthJ-hs
DC operation single side cooled 0.073 K/W
DC operation double side cooled 0.031
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)
IFM trr
dir
dt
IRM(REC)
Qrr
t
Document Number: 93167 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 3
SD1053C..L Series
Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.008 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.021 0.021 0.022
30° 0.036 0.036 0.036 0.036
40
60
80
100
120
140
160
0 100 200 300 400 500 600 700
30° 60° 90° 120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD1053C ..S20L Series
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
40
60
80
100
120
140
160
0 200 400 600 800 1000 1200
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD 1 0 5 3 C . . S20L Serie s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600
30° 60° 90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD1053C..S30L Series
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD 1 0 5 3 C . . S3 0 L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
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4Revision: 14-May-08
SD1053C..L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000 1200 1400
30° 60° 90° 120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD1053C..S20L Series
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 400 800 1200 1600 2000
30° 60° 90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD1053C..S20L Series
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000 1200
30° 60° 90° 120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD1053C..S30L Series
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 400 800 120016002000
30° 60°
90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowa ble Heatsink Temperature (°C)
Conduc tion Period
SD 1 0 5 3 C . . S3 0 L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30°
Ave ra ge Forwa rd Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m i t
Conduction Angle
SD 1 0 5 3 C . . S2 0 L Se r i e s
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 400 800 120016002000
DC
180°
120°
90°
60°
30°
Ave ra g e Fo rw a rd Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Period
SD1053C..S20L Se rie s
T = 150°C
J
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Revision: 14-May-08 5
SD1053C..L Series
Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
Vishay High Power Products
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0
400
800
1200
1600
2000
2400
2800
3200
0 200 400 600 800 1000 1200
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m it
Conduction Angle
SD1053C..S30L Series
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 400 800 120016002000
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Period
SD1053C..S30L Series
T = 1 5 0 ° C
J
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
110100
Number Of Eq ua l Amp litude Half Cyc le Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
SD1053C..S20L Series
Init ia l T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rat ed V App lied Following Surge.
RRM
2000
4000
6000
8000
10000
12000
14000
16000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
SD1053C ..S20L Series
Ve rsus Pulse Tra in Dura t io n.
Maximum Non Repetitive Surge Current
Initia l T = 150 °C
No Voltage Reapplied
Ra t ed V Rea pplied
RRM
J
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
110100
Number Of Eq ua l Amp litude Half Cyc le Current Pulses (N)
Pe a k Ha lf Sine Wa ve Fo rward Current (A)
SD1053C..S30L Se rie s
Init ia l T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Ra t e d Lo a d Cond it io n And With
Rat ed V Ap plied Follow ing Surge.
RRM
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
0.01 0.1 1
Pulse Tra in Du ra t io n (s)
Pe a k Ha lf Sine Wave Forward Current (A)
SD1053C..S30L Series
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
Init ia l T = 150 °C
No Voltage Reapplied
Rated V Reapplied
J
RRM
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6Revision: 14-May-08
SD1053C..L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics
100
1000
10000
11.522.533.544.55
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 1 5 0 ° C
J
SD1053C..S20L Serie s
100
1000
10000
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
SD 1 0 5 3 C . . S30 L Se r i e s
T = 1 5 0 ° C
J
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq ua re Wave Pulse Dura tio n (s)
thJ-hs
Transient Thermal Impedance Z (K/ W)
St e a d y St a t e V a l u e
R = 0.073 K/ W
(Single Side Cooled)
R = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
SD1053C..S20/ S30L Series
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 2 5 ° C
J
Fo rw a r d Re c o v e ry ( V )
T = 1 5 0° C
J
SD1053C..S20L Se ries
Ra t e O f Rise O f Fo rw a r d C u r re n t - d i / d t ( A / u s)
I
V
FP
0
40
80
120
160
0 400 800 1200 1600 2000
T = 2 5 ° C
J
Forward Recovery (V)
T = 150°C
J
SD1053C..S30L Serie s
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
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Revision: 14-May-08 7
SD1053C..L Series
Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
Vishay High Power Products
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
2.5
3
3.5
4
4.5
5
5.5
6
6.5
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
I = 1500 A
Si n e Pu l se
1000 A
FM
SD1053C..S20L Series
T = 150 °C; V > 100V
rJ
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
I = 1500 A
Si n e Pu l se
1000 A
FM
SD1053C..S20L Serie s
T = 150 °C; V > 100V
r
J
0
50
100
150
200
250
300
350
400
450
500
0 50 100150200250300
Maximum Reverse Recovery Current - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1500 A
Si n e Pu l se
1000 A
FM
SD1053C..S20L Series
T = 1 5 0 ° C ; V > 1 0 0 V
Jr
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
10 100 1000
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
I = 1500 A
Si n e Pu l se
1000 A
FM
SD1053C..S30L Series
T = 150 °C; V > 100V
Jr
0
200
400
600
800
1000
1200
1400
1600
0 50 100 150 200 250 300
Maximum Reverse Rec overy Charge - Qrr (µC)
Ra t e O f Fall Of Fo rw a rd Current - d i/ d t (A/ µs)
I = 1500 A
Si n e Pu l se
FM
1000 A
500 A
SD1053C..S30L Se ries
T = 150°C; V > 100V
J
r
0
100
200
300
400
500
600
700
0 50 100 150 200 250 300
Maximum Reverse Rec overy Current - Irr (A)
Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)
1000 A
500 A
SD1053C..S30L Serie s
T = 1 5 0 ° C ; V > 1 0 0 V
Jr
I = 1500 A
Si n e Pu l se
FM
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8Revision: 14-May-08
SD1053C..L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 29 - Frequency Characteristics
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba se w id t h (µs)
Pe ak Forw a rd Current (A)
10 jo ules p er p ulse
6
4
dv/dt = 1000V/µs
Si n u so i d a l Pu l se
SD1053C ..S20L Serie s
T = 150°C, V = 800V
J
RRM
0.6
0.4
0.2
0.08
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba sew id t h (µs)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
20000
400
15000
1000
2000
6000
Peak Forward Current (A)
Si n u so i d a l P u l se
SD 1 0 5 3 C . . S2 0 L Se r i e s
T = 55°C, V = 800V
C
RRM
tp
3000
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
1
2
Pu l se Ba se w i d t h ( µ s)
4
10 joules p er p ulse
6
Trapezoidal Pulse
Peak Forward Current (A)
SD 1 0 53 C .. S2 0 L Se r i e s
T = 150°C , V = 800V
J
RRM
0.6
0.4
d v/ dt = 1000V/ µs, d i/ dt = 300A/ µs
tp
0.8
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
Tr a p e zo i d a l P u l s e
50 Hz
100
200
400
1000
1500
2000
4000
3000
600
6000
10000
15000
Pe a k Fo rw a r d C u rre n t ( A)
SD1053C ..S20L Se ries
T = 55°C, V = 800V
d v/ dt = 1000V/ us,
di/dt = 300A/us
C
RRM
tp
20000
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
1
2
Pulse Basewidth (µs)
4
10 jo ule s p e r p ulse
6
Trapezoidal Pulse
Pe a k Forw a rd Curre nt (A)
0.8
0.6
SD 1 0 5 3C . . S2 0 L Se r i e s
T = 150°C , V = 800V
J
RRM
d v/ d t = 1000V/ µs, d i/ d t = 100A/ µs
0.4
tp
1E2
1E3
1E4
1E11E21E31E4
Pulse Basewidth (µs)
Tr a p e z o i d a l P u l se
50 Hz
100
200
400
1000
2000
4000
600
6000
10000
15000
Pea k Forward Current (A)
SD1053C..S20L Serie s
T = 55°C, V = 800V
C
RRM
20000 dv/dt = 1000V/us
di/dt = 100A/us
tp
Document Number: 93167 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 9
SD1053C..L Series
Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
Vishay High Power Products
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 35 - Frequency Characteristics
Fig. 36 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 37 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 39 - Frequency Characteristics
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
1
2
Pu l se Ba se w i d t h ( µ s)
Peak Forward Current (A)
10 joules per pulse
6
4
dv/dt = 1000V/µs
Sinusoid a l Pulse
SD1053C ..S30L Series
0.6
0.4
0.2
T = 150°C, V = 1000V
J
RRM
tp
1E2
1E3
1E4
1E11E21E31E4
Pulse Ba sew id t h (µs)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
20000
400
15000
1000
2000
6000
Pea k Forw a rd Current ( A)
Sinusoidal Pulse
SD1053C..S30L Series
T = 55°C, V = 1000V
C
RRM
tp
3000
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba sew id t h ( µs)
4
10 joule s p e r p ulse
6
Trapezoidal Pulse
Pe a k Fo rw a rd C u r re n t ( A )
SD1053C..S30L Series
0.8
0.6
T = 150°C, V = 1000V
J
RRM
dv/dt = 1000V/µs, di/dt = 300A/µs
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba se w id t h ( µs)
Tra p ezo id a l Pulse
50 Hz
100
200
400
1000
1500
2000
4000
3000
600
6000
10000
15000
Peak Forward Current (A)
T = 55°C, V = 1000V
SD1053C..S30L Series
dv/dt = 1000V/us,
d i/ d t = 300A/ us
C
RRM
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba se w id t h ( µs)
4
10 jo ules p er p ulse
6
Tr a p e z o i d a l Pu l se
Peak Forward Current (A)
0.8
0.6
SD1053C..S30L Serie s
T = 150°C, V = 1000V
J
RRM
dv/dt = 1000V/µs, di/dt = 100A/µs
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba se w id t h ( µs)
Tr a p e zo i d a l Pu l se
50 Hz
100
200
400
1000
2000
4000
3000
600
6000
10000
15000
Peak Forward Current (A)
SD1053C..S30L Se ries
T = 55°C, V = 1000V
dv/dt = 1000V/us,
d i/ d t = 100A/ us
C
RRM
tp
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10 Revision: 14-May-08
SD1053C..L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version),
920/1050 A
ORDERING INFORMATION TABLE
1
- Diode
2
- Essential part number
3
- 3 = Fast recovery
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
-t
rr
code
7
- L = PUK case DO-200AB (B-PUK)
Device code
51324
67
SD 105 3 C 30 S30 L
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95246
Document Number: 95246 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 05-Nov-07 1
DO-200AB (B-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
53 (2.09) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
26.9 (1.06)
25.4 (1)
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Revision: 12-Mar-12 1Document Number: 91000
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