HZS-L Series Silicon Epitaxial Planar Zener Diodes for Low Noise Application Features * Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. * Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Suitable for Smm-pitch high speed automatic Outline Type No. insertion. Ordering Information Cathode band Type No. Mark Package Code 1. Cathode HZS-L Series Type No. MHD 2. Anode Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Power dissipation Pg 400 mw Junction temperature Tj 200 C Storage temperature Tstg -55 to +175 C Electrical Characteristics (Ta = 25C) Zener Voltage Reverse Current Dynamic Resistance Vz (V)* ESindition Ip(HA) Condition Tq (Q) Condition Type Grade Min Max =I, (mA) Max Vr (V) Max Iz (mA) HZS6L Al 5.2 5.5 0.5 1 2.0 150 0.5 A2 5.3 5.6 A3 5.4 5.7 Bi 55 5.8 80 O05 B2 5.6 59 B3 5.7 6.0 _ C1 5.8 6.1 60 05 C2 6.0 6.3 C3 6.1 6.4 * Tested with DC. igiHZS-L Series Zener Voltage Reverse Current Dynamic Resistance Vz (V)* ESndition tp (uA) Condition ty (Q)_ Condition Type Grade Min Max lz (mA) Max Vea (V) Max bk (mA) HZS7L Al 6.3 6.6 0.5 1 3.5 60 0.5 A2 6.4 6.7 A3 6.6 6.9 Bi 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7 C3 75 7.9 HZS9L Al 7.7 8.1 0.5 1 6.0 60 0.5 A2 7.9 8.3 A3 8.1 8.5 Bt 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 ci 8g 9.3 C2 9.1 9.5 C3 9.3 9.7 HZS11L Al 9.5 9.9 05 1 8.0 80 0.5 A2 9.7 10.1 A3 9.9 10.3 Bi 10.2 10.6 B2 10.4 10.8 B3 10.7 11.4 Ct 10.9 11.3 C2 4414 11.6 C3 11.4 11.9 HZSi2L AI 11.6 12.1 0.5 1 10.5 80 0.5 A2 11.9 12.4 A3 12.2 12.7 Bi 12.4 12.9 B2 12.6 13.4 B3 12.9 13.4 * Tested with DC. 192HZS-L Series Zener Voltage Reverse Current Dynamic Resistance Vz (V)" Sridition Ig(uA) Gerdition g(a) Seetdition Type Grade Min Max iz (MA) Max Vr (V) Max lb, (mA) HZS12L C1 132 137 05 1 10.5 80. 05 c2 135 14.0 63 138 143 HZS15L 1 141 147 08 1 13.0 80 O05 2 145 15.4 3 149 15.5 HZS16L 1 153 159 OS 1 14.0 8005 2 15.7 165 3 163 174 HZS18L 1 169 17.7 05 1 15.0 80 05 2 175 18.3 3 181 19.0 HZS20L 1 188 197 05 1 18.0 100 OS 2 195 20.4 3 20.2 24.4 Hzs22L_ 1 20.9 21.9 O { 20.0 100 OS 2 21.6 226 3 223 233 HZS24L 1 229 24.0 O 1 22.0 120 05 2 23.6 247 3 243 255 HZS27L 1 25.2 266 05 1 24.0 150 05 2 26.2 27.6 3 272 286 HZS30L_ 1 28.2 296 05 1 27.0 200.05 2 29.2 30.6 3 30.2 31.6 HZS33L 1 31.2 326 05 1 30.0 250 05 2 32.2 33.6 3 33.2 346 HZS36L 1 34.2 35.7 05 1 33.0 3000.5 2 35.3 36.8 3 36.4 38.0 * Tested with DC. Note: Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L. 193HZS-L Series Zener Current Iz (A) 10 15 20 25 30 35 40 Zener Voltage Vz (V) Fig.1 Zener current Vs. Zener voltage Temperature Coefficient y, (%/C) Zener Voltage 0.10 50 0.08 40 0.06 30 0.04 20 0.02 10 0 0 -0.02 -10 ~0.04 -20 0.06 -30 40 -50 10 15 20 25 30 35 40 Zener Voltage Vz (V) -0,08 0.10 0.65 Fig.2 Temperature Coefficient Vs. Zener voltage Zener Voita a Temperature Coefficient y, (mV/C) Power Dissipation Pg (mW) 500 400 300 200 ' 100 [ Printed circuit board 1400x1801 .6t mm K\ Quality: paper phenol | |=5 mm MA N\ A \ (Publication value) l=10 mm \ N \ | ! f | | 0 50 100 150 Ambient Temperature Ta (C) Fig.3 Power Dissipation Vs. Ambient Temperature 200 194