Document Number: 93322 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 06-Nov-08 1
Schottky Rectifier, 3.3 A
31DQ09G, 31DQ10G
Vishay High Power Products
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy encapsulation
forenhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long
termreliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The 31DQ..G axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
IF(AV) 3.3 A
VR90/100 V
C-16
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.3 A
VRRM 90/100 V
IFSM tp = 5 µs sine 370 A
VF3 Apk, TJ = 25 °C 0.85 V
TJ- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 31DQ09G 31DQ10G UNITS
Maximum DC reverse voltage VR90 100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4 IF(AV) 50 % duty cycle at TC = 53.4 °C, rectangular waveform 3.3
A
Maximum peak one cycle
non-repetitive surge current, TJ = 25 °C
See fig. 6
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
370
10 ms sine or 6 ms rect. pulse 60
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, 18 µs square pulse 3.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93322
2Revision: 06-Nov-08
31DQ09G, 31DQ10G
Vishay High Power Products Schottky Rectifier, 3.3 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
3 A TJ = 25 °C 0.85
V
6 A 0.97
3 A TJ = 125 °C 0.69
6 A 0.80
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.1 mA
TJ = 125 °C 3
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 110 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of charge dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to ambient RthJA
DC operation
Without cooling fin 80
°C/W
Typical thermal resistance,
junction to lead RthJL DC operation 34
Approximate weight 1.2 g
0.042 oz.
Marking device Case style C-16 31DQ09G
31DQ10G
Document Number: 93322 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 06-Nov-08 3
31DQ09G, 31DQ10G
Schottky Rectifier, 3.3 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Note
(6) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - IF (A)
0.1
1
10
0 0.3 0.6 0.9 1.2
T = 150˚C
T = 125˚C
T = 25˚C
J
J
J
Reverse Voltage - VR (V)
Reverse Current - IR (mA)
0
0.0001
0.001
0.01
0.1
1
10
0 20406080100
125˚C
25˚C
T = 150˚C
J
Reverse Voltage - VR (V)
Junction Capacitance - CT (pF)
10
100
1000
04080120160
T = 25˚C
J
Average Forward Current - IF(AV) (A)
Allowable Lead Temperature (°C)
0
30
60
90
120
150
012345
DC
see note (1)
Square wave (D = 0.50)
80% Rated V applied
R
Average Forward Current - IF(AV) (A)
Average Power Loss (Watts)
0
1
2
3
4
012345
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93322
4Revision: 06-Nov-08
31DQ09G, 31DQ10G
Vishay High Power Products Schottky Rectifier, 3.3 A
Fig. 6 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
Square Wave Pulse Duration - tp(microsec)
Non-Repetitive Surge Current - I FSM (A)
10
100
1000
10 100 1000 10000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
- 31 = 3.3 A (axial and small packages - current is x 10)
- D = DO-41 package
- Q = Schottky Q.. series
- 10 = Voltage ratings
- None = Box package (500 pcs)
TR = Tape and reel package (1200 pcs)
09 = 90 V
10 = 100 V
- G = Schottky generation
- None = Standard production
PbF = Lead (Pb)-free
Device code
51324
67
31 D Q 10 G TR -
1
2
3
4
5
6
7
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95242
Part marking information http://www.vishay.com/doc?95304
Packaging information http://www.vishay.com/doc?95309
SPICE model http://www.vishay.com/doc?95300
Document Number: 95242 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-Nov-08 1
Axial DO-201AD (C-16)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
Ø 5.8 (0.23)
MAX.
10.0 (0.39)
MAX.
Ø 5.8 (0.23)
MAX.
21.0 (0.83) MIN.
(2 places)
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Cathode band
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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